Abstract: In a substrate processing apparatus, neutralization processing is performed on a substrate by a neutralization device provided in a thermal processing section. In the neutralization device, at least one of a holder that holds the substrate and an emitter that emits vacuum ultraviolet rays is moved relative to another one in one direction. At this time, one surface of the substrate is irradiated with the vacuum ultraviolet rays emitted by the emitter. When the entire one surface of the substrate is irradiated with the vacuum ultraviolet rays, the neutralization processing ends. Thereafter, the substrate on which the neutralization processing has been performed is transported to a coating processing unit in a coating processing section. In the coating processing unit, a film of a processing liquid is formed on the one surface of the substrate on which the neutralization processing has been performed.

Abstract: A current measurement method for measuring a tunneling current in biopolymers passing through between a pair of electrodes includes arranging the electrodes in a liquid that contains an electrolyte and, while applying a voltage between the electrodes, measuring a current flowing between the electrodes via an electric double layer formed along surfaces of the electrodes. This enables measuring the current in consideration of the electric double layer. As a result, it is possible to more accurately measure the tunneling current in the biopolymers included in a liquid sample that contains an electrolyte.

Abstract: In a substrate processing apparatus, neutralization processing is performed on a substrate by a neutralization device provided in a thermal processing section. In the neutralization device, at least one of a holder that holds the substrate and an emitter that emits vacuum ultraviolet rays is moved relative to another one in one direction. At this time, one surface of the substrate is irradiated with the vacuum ultraviolet rays emitted by the emitter. When the entire one surface of the substrate is irradiated with the vacuum ultraviolet rays, the neutralization processing ends. Thereafter, the substrate on which the neutralization processing has been performed is transported to a coating processing unit in a coating processing section. In the coating processing unit, a film of a processing liquid is formed on the one surface of the substrate on which the neutralization processing has been performed.

Abstract: In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

Abstract: In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

Abstract: With a cover member being located directly upward of an opening of a casing, a substrate in a horizontal attitude is carried into a gap between the cover member and the opening. The carried-in substrate is moved to the inside of the casing through the opening. The cover member is lowered, so that the opening is closed. An inert gas is supplied to the inside of the casing. One surface of the substrate is irradiated with vacuum ultraviolet rays by a light emitter while the substrate is moved in a horizontal direction in the casing. The cover member is lifted, so that the opening is opened. The substrate is moved to a position between the cover member and the opening from a position inside of the casing through the opening. Thereafter, the substrate in the horizontal attitude is taken out in the horizontal direction.

Abstract: In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

Abstract: After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: Disclosed is a negative developing method including a puddle-forming step, a diluting step, and a surface drying step. In the puddle-forming step, developer containing an organic solvent is supplied to a resist film formed on a surface of the substrate and keeping a puddle of the developer on the resist film. In the diluting step, a concentration of a dissolution product dissolved in the developer on the resist film is diluted by additionally supplying the developer containing the organic solvent to the resist film after the puddle-forming step. In the surface drying step, the surface of the substrate is dried by rotating the substrate after the diluting step.

Abstract: A local transport hand is configured to be movable in a front-and-rear direction between a rear position rearward of a light emitter and a front position forward of the light emitter. A substrate on which a DSA film is formed is placed on an upper surface of the local transport hand. Vacuum ultraviolet rays having strip-shape cross sections are emitted from the light emitter to cross a moving path of the local transport hand. The local transport hand is moved from the front position to the rear position such that the DSA film on the substrate is irradiated with the vacuum ultraviolet rays emitted by the light emitter. At this time, a moving speed of the substrate is controlled, so that an exposure value for the DSA film formed on the substrate is adjusted.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: A local transport hand is configured to be movable in a front-and-rear direction between a rear position rearward of a light emitter and a front position forward of the light emitter. A substrate on which a DSA film is formed is placed on an upper surface of the local transport hand. Vacuum ultraviolet rays having strip-shape cross sections are emitted from the light emitter to cross a moving path of the local transport hand. The local transport hand is moved from the front position to the rear position such that the DSA film on the substrate is irradiated with the vacuum ultraviolet rays emitted by the light emitter. At this time, a moving speed of the substrate is controlled, so that an exposure value for the DSA film formed on the substrate is adjusted.

Abstract: Disclosed is a negative developing method including a puddle-forming step, a diluting step, and a surface drying step. In the puddle-forming step, developer containing an organic solvent is supplied to a resist film formed on a surface of the substrate and keeping a puddle of the developer on the resist film. In the diluting step, a concentration of a dissolution product dissolved in the developer on the resist film is diluted by additionally supplying the developer containing the organic solvent to the resist film after the puddle-forming step. In the surface drying step, the surface of the substrate is dried by rotating the substrate after the diluting step.

Abstract: With a cover member being located directly upward of an opening of a casing, a substrate in a horizontal attitude is carried into a gap between the cover member and the opening. The carried-in substrate is moved to the inside of the casing through the opening. The cover member is lowered, so that the opening is closed. An inert gas is supplied to the inside of the casing. One surface of the substrate is irradiated with vacuum ultraviolet rays by a light emitter while the substrate is moved in a horizontal direction in the casing. The cover member is lifted, so that the opening is opened. The substrate is moved to a position between the cover member and the opening from a position inside of the casing through the opening. Thereafter, the substrate in the horizontal attitude is taken out in the horizontal direction.

Abstract: A substrate processing method includes forming a first film on the upper surface of the substrate and supplying a first removal liquid to a peripheral edge of said first film to remove a first annular region at the peripheral edge. The method also includes correcting a relative positional relationship between the substrate and a first removal nozzle, forming a second film so as to cover the first film, and supplying a second removal liquid to a peripheral edge of said second film to remove a second annular region at the peripheral edge. The method also includes correcting a relative positional relationship between the substrate and a second removal nozzle so that said second annular region at the peripheral edge of said second film is removed in a predetermined second constant width and carrying the substrate into each of a first and second film formation units by a carry-in device.

Abstract: In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.