Abstract: Provided is an electrically driven support base which is configured so as to prevent the rotation-induced shaking of a pole for supporting a camera mounting head and so as to enable the automatic adjustment of the position in height of a camera. One end of a flexible transmission belt (drive cord (12)) is connected to a multi-stage telescoping pole (2) having a mounting head (50) provided to the front end pole (46) of the multi-stage telescoping pole (2), and the drive cord (12) is engaged with a gear connected to an electric motor (23). The multi-stage telescoping pole (2) is extended or retracted by paying out or pulling in the drive cord (12). A camera means can be mounted on the mounting head (50), and the multi-stage telescoping pole (2) is provided with a rotation-induced shaking prevention means for each stage pole.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

Abstract: A semiconductor test program debugging apparatus is disclosed to which data concerning a packet input to and output from the packet transfer memory device is supplied, and which extracts a part corresponding to the packet from data input to and output from the memory device with response to a test signal generated by a tester simulator and displays the details of the part.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.