Abstract: An SEM can inspect a groove or hole in the surface of a specimen by irradiating the specimen with a high energy electron beam. The SEM is used in the manufacturing process of a semiconductor device to observe the configuration of the bottom of a deep hole.

Abstract: The charged-particle beam apparatus according to this invention is of the type in which a specimen is inserted between the upper and lower magnetic poles of an objective lens, and is constructed such that stages, which are used to move a specimen in a desired direction, are mounted one on top another from the bottom wall of the objective lens, thus preventing the specimen from being affected by external vibration. Devices, which do not generate a magnetic field, are used to drive the stages. This enables the drive devices to be directly connected to the stages, so that the stages are moved accurately.

Abstract: In a particle beam surface analyzer, having a partition wall separation a vacuum space, an opening that is provided in a partition wall through which the particle beam is taken out, a seal member which is moved along a seal surface of the seal member and seals the opening, a condenser lens which converges the particle beam onto the sample, and detector for detecting a physical quantity from the sample when the particle beam is irradiated on the sample, the surface analyzer further has a movable shift member that pushes one side surface of the seal member along the seal surface of the seal member and a stopping member which the other side surface of the seal member having a predetermined angle being larger than 55.degree. and smaller than 75.degree.

Abstract: An apparatus and a method of obtaining respective electron channeling patterns from a plurality of grains on a sample are disclosed. The sample is scanned by, for example, an electron beam two-dimensionally to specify positions of each of the grains and the positions are compared with an irradiation position of the collimated electron beam for the electron channeling pattern. The sample is moved to cause the positions of each of the grains to coincide with the irradiation position of the collimated electron beam.

Abstract: A scanning electron microscope for observing and measuring a minute pattern of a sample comprising an electron lens for focusing an electron beam from an electron source onto the sample, wherein the electron beam scans on the sample, an inclining means for inclining the sample at an arbitrary angle .alpha., and two secondary electron detectors are disposed at the position which are respectively turned at the same angle .theta. around the central axis of the electron beam from a plane which contains an axis of inclination of the sample and a central axis of the electron beam. As it is possible to measure the length of the minute pattern by detecting the secondary electron having a symmetrical wave-form while observing the minute pattern at the arbitrary angle, high measuring accuracy is attained.

Abstract: An analysis system in which air in a specimen exchange chamber is evacuated by an oil-sealed rotary vacuum pump and which employs electron incorporates a purge gas supply means at the inlet side of the oil-sealed rotary vacuum pump. The purge gas supply means supplies a small quantity of purge gas when the air in the specimen exchange chamber is evacuated to the almost ultimate pressure of the pump.

Abstract: On a charged particle beam disphragm for confining the angular aperture of a charged particle beam striking a sample, contamination is caused by the impact of the charged particles. A metal material is sputtered by the ion sputtering technique, and the sputtered metal particles are attached over the surface of the contamination incurred on the charged particle beam diaphragm to cover the surface of the contamination. As a result, the charged particle beam diaphragm is substantially purified.