Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter.

Abstract: A piezoelectric sheet, which comprises a matrix comprising a polyimide, silicone rubber or an epoxy resin, and a cubic lead zirconate titanate single-crystal particle dispersed in the matrix, wherein (100) plane of said single-crystal particle is oriented parallel to a plane of said sheet, and said single-crystal particle penetrates the plane of said sheet from one to the other side. Conventionally, since the constituent crystal particles are randomly oriented, properties of the crystal particles are obtained as the average values of the properties of the individual particles. In contrast, according to the piezoelectric sheet of the present invention, since the cubic PZT single-crystal particles have been disposed so that (100) axes are oriented perpendicularly to the plane of the sheet, the PZT can have the properties inherent in the (100) planes.

Abstract: A PZT fiber is formed by using a titanium wire or a heat-resistant metal wire made of platinum or the like, as a core wire, and overlaying PZT crystals on a surface of the wire. A smart board utilizing the PZT fiber is formed by embedding the PZT fiber into a conductive composite material layer made of carbon fiber reinforced plastic or the like. An actuator utilizing the smart board is constituted by applying a voltage between the PZT fiber and the conductive composite layer of the smart board.

Abstract: A PZT fiber is formed by using a titanium wire or a heat-resistant metal wire made of platinum or the like, as a core wire, and overlaying PZT crystals on a surface of the wire. A smart board utilizing the PZT fiber is formed by embedding the PZT fiber into a conductive composite material layer made of carbon fiber reinforced plastic or the like. An actuator utilizing the smart board is constituted by applying a voltage between the PZT fiber and the conductive composite layer of the smart board.

Abstract: The present invention is intended to provide piezoelectric ceramic materials having far better strain characteristics than that of conventional piezoelectric ceramics, as well as a novel method for producing such piezoelectric ceramics, and the present invention involves solid solution piezoelectric ceramics primarily comprising the complex perovskite compound Pb(Ni⅓Nb⅔)O3, the simple perovskite compound PbTiO3, and PbZrO3, wherein the aforementioned ceramics primarily comprise compositions within a triangle in which the compositional vertices are (X=52, Y=34, Z=14), (X=49, Y=37, Z=14), and (X=49, Y=34, Z=17), where Pb(Ni⅓Nb⅔)O3 is X mol %, PbTiO3 is Y mol %, and PbZrO3 is Z mol % (X+Y+Z=100) among the triangular coordinates in the phase diagram in which the vertices are Pb(Ni⅓Nb⅔) O3, PbTiO3, and PbZrO3, as well as a method for producing such solid solution ceramics.

Abstract: The present invention provides novel ceramic materials with excellent electrostrictive property, and the present invention relates to electrostrictive ceramics consisting of solid solution ceramics which can be obtained by combining about 30 molar % of primitive perovskite-type compound PbTiO3 with a composite perovskite compound Pb(Ni⅓Nb⅔)O3.

Abstract: The present invention provides novel ceramic materials with excellent electrostrictive property, and the present invention relates to electrostrictive ceramics consisting of solid solution ceramics which can be obtained by combining about 30 molar % of primitive perovskite-type compound PbTiO.sub.3 with a composite perovskite compound Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3.

Abstract: A photo-semiconductor is produced by melting Bi.sub.2 O.sub.3 or its mixture with a small amount of an oxide or fluoride and then quenching the resultant melt in the form of a film.