Patents by Inventor Tadashi Shimazu
Tadashi Shimazu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9011634Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).Type: GrantFiled: October 4, 2012Date of Patent: April 21, 2015Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Ryuichi Matsuda, Masahiko Inoue, Kazuto Yoshida, Tadashi Shimazu
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Patent number: 8889568Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.Type: GrantFiled: May 18, 2011Date of Patent: November 18, 2014Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Seiji Nishikawa, Hidetaka Kafuku, Tadashi Shimazu
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Patent number: 8662010Abstract: A plasma film deposition apparatus (plasma processing apparatus) includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface. The second antenna 11b is supplied with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by a power supply. Lines of magnetic force F2, heading in a direction opposite to the direction of lines of magnetic force F1 appearing at the site of the antenna 11a, are thereby generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated over a wide range within a tubular container 2.Type: GrantFiled: May 4, 2007Date of Patent: March 4, 2014Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Ryuichi Matsuda, Tadashi Shimazu, Masahiko Inoue
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Publication number: 20140057459Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.Type: ApplicationFiled: October 22, 2013Publication date: February 27, 2014Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Tadashi Shimazu, Seiji Nishikawa, Hidetaka Kafuku
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Patent number: 8480912Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).Type: GrantFiled: February 15, 2007Date of Patent: July 9, 2013Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Ryuichi Matsuda, Masahiko Inoue, Kazuto Yoshida, Tadashi Shimazu
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Publication number: 20130109154Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.Type: ApplicationFiled: May 18, 2011Publication date: May 2, 2013Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Seiji Nishikawa, Hidetaka Kafuku, Tadashi Shimazu
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Patent number: 8337960Abstract: A seasoning method for a film-forming apparatus configured to form a silicon nitride film on a substrate placed in a process chamber. The method is conducted for reducing particles in the apparatus. The method comprises executing the plasma cleaning of the process chamber to remove a film deposited on the inner wall thereof (step S1), subsequently depositing an amorphous silicon film (step S2), depositing thereon a silicon nitride film in which the nitrogen content gradually increases in the thickness direction (step S3), and keeping the inside of the process chamber being filled with a rare-gas plasma until film formation on the substrate is initiated (step S4).Type: GrantFiled: February 19, 2007Date of Patent: December 25, 2012Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Tadashi Shimazu, Yuichi Kawano
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Patent number: 8288294Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.Type: GrantFiled: June 25, 2009Date of Patent: October 16, 2012Assignees: Mitsubishi Heavy Industries, Ltd., Mitsubishi Electric CorporationInventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
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Publication number: 20110266660Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.Type: ApplicationFiled: June 25, 2009Publication date: November 3, 2011Applicants: MITSUBISHI ELECTRIC CORPORATION, MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
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Patent number: 7972946Abstract: Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.Type: GrantFiled: July 24, 2007Date of Patent: July 5, 2011Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Tadashi Shimazu, Masahiko Inoue, Toshihiko Nishimori, Yuichi Kawano
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Publication number: 20100310791Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.Type: ApplicationFiled: January 20, 2009Publication date: December 9, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Tadashi Shimazu, Seiji Nishikawa, Hidetaka Kafuku
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Publication number: 20100236482Abstract: An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).Type: ApplicationFiled: October 14, 2008Publication date: September 23, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hidetaka Kafuku, Tadashi Shimazu, Ryuichi Matsuda, Akihiko Matsukura, Seiji Nishikawa
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Publication number: 20090242511Abstract: A seasoning method for a film-forming apparatus configured to form a silicon nitride film on a substrate placed in a process chamber. The method is conducted for reducing particles in the apparatus. The method comprises executing the plasma cleaning of the process chamber to remove a film deposited on the inner wall thereof (step S1), subsequently depositing an amorphous silicon film (step S2), depositing thereon a silicon nitride film in which the nitrogen content gradually increases in the thickness direction (step S3), and keeping the inside of the process chamber being filled with a rare-gas plasma until film formation on the substrate is initiated (step S4).Type: ApplicationFiled: February 19, 2007Publication date: October 1, 2009Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Tadashi Shimazu, Yuichi Kawano
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Publication number: 20090176380Abstract: Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.Type: ApplicationFiled: July 24, 2007Publication date: July 9, 2009Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Tadashi Shimazu, Masahiko Inoue, Toshihiko Nishimori, Yuichi Kawano
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Publication number: 20090127227Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).Type: ApplicationFiled: February 15, 2007Publication date: May 21, 2009Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Ryuichi Matsuda, Masahiko Inoue, Kazuto Yoshida, Tadashi Shimazu
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Patent number: 7314525Abstract: A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiH4 gas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiH4 gas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.Type: GrantFiled: July 24, 2002Date of Patent: January 1, 2008Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Tadashi Shimazu, Masahiko Inoue
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Publication number: 20070224364Abstract: A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.Type: ApplicationFiled: May 4, 2007Publication date: September 27, 2007Inventors: Ryuichi Matsuda, Tadashi Shimazu, Masahiko Inoue
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Publication number: 20070107843Abstract: In a film-forming apparatus for forming a thin film (15) on a substrate (6) by supplying a gas (13) through a gas nozzle (14) into a vacuum chamber (1) and transforming the gas (13) into a plasma by applying a current to a high-frequency antenna (7), a ceramic inner cylinder (20) is arranged so as to contact with the vacuum chamber (1) at only a small area of the cylinder for preventing adhesion of the film-forming component onto the inner wall of the vacuum chamber (1). In this film-forming apparatus, it is possible to suppress generation of particles and to reduce the workload of the cleaning process.Type: ApplicationFiled: December 7, 2004Publication date: May 17, 2007Applicant: Mitsubishi Heavy Industries, Ltd.Inventors: Yuichi Kawano, Tadashi Shimazu, Toshihiko Nishimori, Kazuto Yoshida
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Publication number: 20050202183Abstract: A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.Type: ApplicationFiled: June 17, 2003Publication date: September 15, 2005Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Ryuichi Matsuda, Tadashi Shimazu, Masahiko Inoue
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Publication number: 20030145788Abstract: A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiH4 gas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiH4 gas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.Type: ApplicationFiled: July 24, 2002Publication date: August 7, 2003Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Tadashi Shimazu, Masahiko Inoue