Abstract: An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.

Abstract: An on-wafer monitoring system (200) is placed at a position of a substrate to be treated in a plasma treatment device (100). The on-wafer monitoring system (200) includes various sensors, a data I/O unit (210) for optically inputting/outputting data to/from outside, and an internal power source unit (250) for supplying power to them. The on-wafer data I/O unit (210) is connected to a laser diode (LD) (320) and a photo diode (PD) (330) which are optical I/O units installed outside. The data I/O unit (210) receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer (400), a VUV photon detector (500), and a radical ion species emission spectrophotometer (600).

Abstract: A method for etching a silicon nitride film, includes the steps of supplying a fluorine radical, a compound of fluorine and hydrogen, and an oxygen radical close to a substrate having the silicon nitride film, and selectively etching the silicon nitride film from the substrate with the fluorine radical, the compound of fluorine and hydrogen, and the oxygen radical.