Abstract: A semiconductor memory device includes a plurality of word lines, a first select gate line, a second select gate line, a first semiconductor layer, a third select gate line, a fourth select gate line, a second semiconductor layer, and a word line contact electrode. The first select gate line and the third select gate line are farther from the substrate than the plurality of word lines. The second select gate line and the fourth select gate line are closer to the substrate than the plurality of word lines. The first semiconductor layer is opposed to the plurality of word lines, the first select gate line, and the second select gate line. The second semiconductor layer is opposed to the plurality of word lines, the third select gate line, and the fourth select gate line. The word line contact electrode is connected to one of the plurality of word lines.

Abstract: To select a graphic primitive hidden behind a graphic primitive displayed in foreground, a point on the display screen is pointed to by a pointing device. A CPU detects graphic primitives that include the specified point based on the position and the size indicated by the graphic primitive information stored in the system memory and further detects the smallest graphic primitive completely included in one or more graphic primitives among the detected graphic primitives. The detected smallest graphic primitive is thereafter processed as the selected graphic primitive.

Abstract: In a CMOS type static RAM, a substrate bias voltage VPP higher than a power supply voltage supplied from an outer unit is supplied to an N type substrate region of a PMOS transistor of a CMOS inverter forming a word line driving circuit to bias the N type substrate region to the bias voltage VPP and to a power supply terminal of the CMOS inverter as a power supply voltage. Whereby, resistance of storage data to incidence of radioactive rays is increased just after writing to a storage node of a memory cell is ended, and a soft error generation rate can be easily reduced.