Abstract: Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Abstract: There is provided a technique that includes: forming a film by heating a substrate held on a substrate mounting table and supplying gas from a shower head to the substrate; performing a first temperature measurement by measuring a first temperature of the shower head and storing a measurement value of the first temperature as reference data; setting processing of a subsequent substrate; performing a second temperature measurement by measuring a second temperature of the shower head before loading the subsequent substrate; calculating a difference between the first temperature and the second temperature; and adjusting a temperature of the shower head to be equal to the first temperature by operating the heater and adjusting a distance between the shower head and the substrate mounting table according to the difference between the first temperature and the second temperature.

Abstract: There is provided a technique that includes (a) performing a heating process on a substrate in a process chamber, (b) transferring the substrate between the process chamber and a load lock chamber connected to a vacuum transfer chamber by a transfer robot installed in the vacuum transfer chamber connected to the process chamber, and (c) reading transfer information corresponding to process information applied to the substrate from a memory device in which plural pieces of the process information on a process content of the substrate and plural pieces of the transfer information of the transfer robot corresponding to the plural pieces of the process information are recorded, and controlling the transfer robot to transfer the substrate based on the read transfer information.

Abstract: Described herein is a technique capable of improving the productivity of a substrate processing system including a plurality of process chambers. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) placing a storage container accommodating substrates on a loading port shelf; (b) transferring the substrates in a predetermined order from the storage container to process chambers capable of processing the substrates; (c) perform a substrate processing in the process chambers; (d) generating first count data corresponding to the processing chambers; (e) storing the first count data; (f) assigning transfer flag data to one of the process chambers next to another of the process chambers corresponding to a maximum count number of the first count data; and (g) transferring substrates accommodated in a next storage container of the storage container in the predetermined order based on the transfer flag data.

Abstract: There is provided a technique that includes (a) performing a heating process on a substrate in a process chamber, (b) transferring the substrate between the process chamber and a load lock chamber connected to a vacuum transfer chamber by a transfer robot installed in the vacuum transfer chamber connected to the process chamber, and (c) reading transfer information corresponding to process information applied to the substrate from a memory device in which plural pieces of the process information on a process content of the substrate and plural pieces of the transfer information of the transfer robot corresponding to the plural pieces of the process information are recorded, and controlling the transfer robot to transfer the substrate based on the read transfer information.

Abstract: Described herein is a technique capable of improving the productivity of a substrate processing system including a plurality of process chambers. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) placing a storage container accommodating substrates on a loading port shelf; (b) transferring the substrates in a predetermined order from the storage container to process chambers capable of processing the substrates; (c) perform a substrate processing in the process chambers; (d) generating first count data corresponding to the processing chambers; (e) storing the first count data; (f) assigning transfer flag data to one of the process chambers next to another of the process chambers corresponding to a maximum count number of the first count data; and (g) transferring substrates accommodated in a next storage container of the storage container in the predetermined order based on the transfer flag data.

Abstract: Described herein is a technique capable of improving a quality of a substrate processing. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) receiving substrate data including at least one of a stacked number of layers of a device formed on a substrate and a structure of the device; (b) setting an apparatus parameter corresponding to the substrate data; (c) supporting the substrate corresponding to the substrate data above a substrate support; (d) elevating a temperature of the substrate based on the apparatus parameter while the substrate is separated from a surface of the substrate support; (e) placing the substrate on the substrate support after (d); and (f) processing the substrate in a process chamber.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: Described herein is a technique capable of capable of managing a substrate processing apparatus efficiently. According to one aspect of the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a position information acquisition part configured to acquire position information of the process chamber; a memory device configured to store the position information; and an information controller configured to cause the position information acquired by the position information acquisition part to be stored in the memory device and the position information stored in the memory device to be outputted.

Abstract: A technique is described that provides efficient production management of a substrate processing system that includes a substrate processing apparatus and a mobile terminal. The substrate processing apparatus includes: at least one reactor where a substrate is processed; a transfer chamber adjacent to at least one reactor; a detector that detects a state of at least one reactor, a state of the transfer chamber, and generates monitored apparatus information representing the state of at least one reactor, and the state of the transfer chamber.

Abstract: A substrate processing apparatus includes a heat storage part on which a substrate is mounted, a tray including the heat storage part, a substrate transfer part including a rotary shaft and a rotating plate supported by the rotary shaft and being configured such that the tray can be mounted on the rotating plate, a plurality of bases arranged circumferentially around the rotary shaft; and a heater provided for each of the bases.

Abstract: A substrate processing apparatus and technique, capable of processing substrates regardless of the types of substrates, include a loadlock chamber accommodating a first support part and a second support part for supporting a wafer; a first transfer mechanism including first tweezers configured to transfer the substrate into or out of the loadlock chamber through a first side of the loadlock chamber; a second transfer mechanism including second tweezers configured to transfer the substrate into or out of the loadlock chamber through a second side of the loadlock chamber; and a reactor where the substrate is processed. The first support part includes first support mechanisms spaced apart by a first distance along a direction perpendicular to an entering direction of the first tweezers or the second tweezers, and the second support part includes second support mechanisms spaced apart by a second distance smaller than the first distance.

Abstract: Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.

Abstract: The present invention provides a technique for improving the productivity of a processing apparatus including a plurality of process chambers. There is provided a technique including a method for manufacturing a semiconductor device including: (a) transferring a last remaining substrate stored in an xth storage unit of a plurality of storage units to an empty nth chamber in an mth processing unit of a plurality of processing units; and (b) transferring a first one of a plurality of substrates stored in an (x+1)th storage unit of the plurality of storage units to one of chambers in an (m+1)th processing unit of the plurality of processing units (where x, m and n are natural numbers).

Abstract: Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.

Abstract: The present invention provides a technique for improving the productivity of a processing apparatus including a plurality of process chambers. There is provided a technique including a method for manufacturing a semiconductor device including: (a) transferring a last remaining substrate stored in an xth storage unit of a plurality of storage units to an empty nth chamber in an mth processing unit of a plurality of processing units; and (b) transferring a first one of a plurality of substrates stored in an (x+1)th storage unit of the plurality of storage units to one of chambers in an (m+1)th processing unit of the plurality of processing units (where x, m and n are natural numbers).

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit.

Abstract: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.