Patents by Inventor Tadashi Tsujino

Tadashi Tsujino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device
    Patent number: 8183144
    Abstract: A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: May 22, 2012
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tamio Matsumura, Tadashi Tsujino
  • Method of manufacturing semiconductor device
    Patent number: 8097533
    Abstract: A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: January 17, 2012
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tamio Matsumura, Tadashi Tsujino
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20070173045
    Abstract: A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step.
    Type: Application
    Filed: November 17, 2006
    Publication date: July 26, 2007
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Tamio MATSUMURA, Tadashi Tsujino