Patents by Inventor Tadashige Satoh

Tadashige Satoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial wafer and process for producing the same
    Patent number: 5445897
    Abstract: In order to grow a GaAs.sub.1-x P.sub.x fixed-composition layer of excellent quality, which has a predetermined composition x, over a GaAs or GaP single crystal substrate, a varied-composition layer is formed between the substrate and the fixed-composition layer. The varied-composition layer comprises at least two varied-composition layer portions and at least one fixed-composition layer portion with a predetermined thickness that is formed between the varied-composition layer portions, whereby dislocations caused by lattice mismatch with the GaP substrate are settled in the varied-composition layer portions and recovered in the fixed-composition layer portion between the varied-composition layer portions, thereby minimizing the dislocations, and thus making it possible to obtain a GaAs.sub.1-x P.sub.x layer of excellent crystal quality, which has a predetermined composition x.
    Type: Grant
    Filed: June 1, 1993
    Date of Patent: August 29, 1995
    Assignees: Mitsubishi Kasei Polytec Company, Mitsubishi Kasei Corporation
    Inventors: Tadashige Satoh, Hisanori Fujita