Patents by Inventor Tadataka Edamura

Tadataka Edamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11075315
    Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: July 27, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masahiro Hitaka, Akio Ito, Tatsuo Dougakiuchi, Kazuue Fujita, Tadataka Edamura
  • Patent number: 11067728
    Abstract: A movable diffraction grating includes; a supporting portion; a movable portion which includes a first surface and is swingably connected with the supporting portion; a resin layer which is provided on the first surface and includes a diffraction grating pattern formed therein; a reflection layer which is provided on the resin layer an along the diffraction grating pattern and is formed of metal; and a stress regulation portion inducing stress on the movable portion, and the first surface is caused to bend concavely by stress.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: July 20, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tadataka Edamura, Atsushi Sugiyama, Tatsuo Dougakiuchi
  • Publication number: 20210181518
    Abstract: A light source module includes a light source; an optical fiber configured to guide light output from the light source; a pair of holding members configured to hold both ends of a first portion of the optical fiber such that the first portion extends linearly; a first vibrator configured to vibrate the first portion along a first direction intersecting an extending direction of the first portion; and a second vibrator configured to vibrate the first portion along a second direction intersecting the extending direction and differing from the first direction.
    Type: Application
    Filed: December 1, 2020
    Publication date: June 17, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Takahide OCHIAI, Naota AKIKUSA, Tatsuo DOUGAKIUCHI, Tadataka EDAMURA
  • Publication number: 20210057875
    Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.
    Type: Application
    Filed: August 5, 2020
    Publication date: February 25, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Atsushi SUGIYAMA, Akio ITO, Tadataka EDAMURA
  • Patent number: 10673002
    Abstract: Organic photoelectric conversion element has a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a first organic layer that contains a first organic semiconductor containing principally a p-type organic semiconductor, a second organic layer that contains a second organic semiconductor containing principally an n-type organic semiconductor, and an intermediate layer that contains the first organic semiconductor and the second organic semiconductor. The second organic layer is disposed at a side of the second electrode relative to the first organic layer. The intermediate layer is between the first organic layer and the second organic layer and reaches each of these layers. The thickness of the second organic layer is greater than the sum of the thicknesses of the first organic layer and intermediate layer.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: June 2, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shigeo Hara, Wataru Akahori, Takahiko Yamanaka, Tadataka Edamura
  • Patent number: 10591413
    Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: March 17, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Kazuue Fujita, Tadataka Edamura
  • Patent number: 10574030
    Abstract: An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: February 25, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tadataka Edamura, Atsushi Sugiyama, Tatsuo Dougakiuchi
  • Publication number: 20190326466
    Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
    Type: Application
    Filed: April 17, 2019
    Publication date: October 24, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Masahiro HITAKA, Akio ITO, Tatsuo DOUGAKIUCHI, Kazuue FUJITA, Tadataka EDAMURA
  • Patent number: 10439363
    Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: October 8, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akio Ito, Kazuue Fujita, Daisuke Kawaguchi, Tatsuo Dougakiuchi, Tadataka Edamura
  • Patent number: 10404037
    Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: September 3, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akira Higuchi, Yoshitaka Kurosaka, Tadataka Edamura, Masahiro Hitaka
  • Publication number: 20190265396
    Abstract: A movable diffraction grating includes; a supporting portion; a movable portion which includes a first surface and is swingably connected with the supporting portion; a resin layer which is provided on the first surface and includes a diffraction grating pattern formed therein; a reflection layer which is provided on the resin layer an along the diffraction grating pattern and is formed of metal; and a stress regulation portion inducing stress on the movable portion, and the first surface is caused to bend concavely by stress.
    Type: Application
    Filed: February 26, 2019
    Publication date: August 29, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tadataka EDAMURA, Atsushi SUGIYAMA, Tatsuo DOUGAKIUCHI
  • Patent number: 10361538
    Abstract: A movable diffraction grating includes: a support portion; a movable portion swingably connected to the support portion; a coil buried in the movable portion; a magnetic field generator configured to apply a magnetic field to the coil; an insulation layer provided on a surface of the movable portion; a resin layer provided on the insulation layer and provided with a diffraction grating pattern; and a reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: July 23, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Atsushi Sugiyama, Tadataka Edamura
  • Patent number: 10333279
    Abstract: A quantum cascade laser device has a light-absorbing cover member located between one emission end face of a quantum cascade laser element and an emission window of a housing. The emission end face and an opposing surface of a submount with respect to the cover member are flush with each other. The cover member has an opening at a position opposing the emission end face. The opening has a tapered first opening part increasing its diameter from the emission end face side to the emission window side and a second opening part formed with a fixed diameter not smaller than the smallest diameter of the first opening part.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: June 25, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Takahide Ochiai, Tadataka Edamura, Naota Akikusa
  • Patent number: 10236661
    Abstract: A wavelength variable light source includes a housing, a heat sink disposed in the housing, an excitation light source disposed on the heat sink and configured to output excitation light, a gain medium disposed on the heat sink and including an active layer and a lower DBR, a MEMS mechanism including a movable film facing the gain medium via a gap, disposed on the gain medium, and configured to control the gap, an upper DBR provided in the movable film and configuring a resonator together with the lower DBR, a reflector configured to reflect the excitation light output from the excitation light source toward the gain medium in the housing, and a window formed in the housing and configured to transmit light output from the gain medium.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: March 19, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Atsushi Sugiyama, Tadataka Edamura, Naota Akikusa
  • Publication number: 20190074664
    Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
    Type: Application
    Filed: September 5, 2018
    Publication date: March 7, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Akio ITO, Kazuue FUJITA, Daisuke KAWAGUCHI, Tatsuo DOUGAKIUCHI, Tadataka EDAMURA
  • Publication number: 20190052058
    Abstract: An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).
    Type: Application
    Filed: August 1, 2018
    Publication date: February 14, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tadataka EDAMURA, Atsushi SUGIYAMA, Tatsuo DOUGAKIUCHI
  • Patent number: D892656
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: August 11, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Masahiro Hitaka, Tadataka Edamura
  • Patent number: D892657
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: August 11, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Masahiro Hitaka, Tadataka Edamura
  • Patent number: D899279
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: October 20, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Masahiro Hitaka, Tadataka Edamura
  • Patent number: D899284
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: October 20, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Tatsuo Dougakiuchi, Akio Ito, Masahiro Hitaka, Tadataka Edamura