Abstract: Heat from a semiconductor device is effectively dissipated while the height of the semiconductor device is kept low. A semiconductor device includes a cooler configured to cool a semiconductor module. The semiconductor module includes: a metal block, a semiconductor element, a terminal connected to the semiconductor element, and a resin covering a part of the terminal, the metal block, and the semiconductor element. The cooler includes: a metal base including the semiconductor module in a plan view while being in contact with a lower surface of the semiconductor module, and a cooling pipe disposed on an upper surface of the metal base and configured to cool the semiconductor module. The cooling pipe at least partially surrounds the semiconductor module in a plan view.

Abstract: A semiconductor device according to the present disclosure includes a semiconductor substrate, a first electrode provided on the semiconductor substrate, an insulating layer including a first part provided on an upper surface of the first electrode, a second electrode including a main portion and an eaves portion, the main portion being provided on the upper surface of the first electrode, the eaves portion extending over the first part and solder covering an upper surface of the main portion and a part of an upper surface of the eaves portion wherein the insulating layer includes a second part covering a part of the upper surface of the eaves portion, the part being closer to an end portion of the eaves portion than the part covered by the solder and a third part connecting the first part and the second part and covering the end portion of the eaves portion.

Abstract: An exhaust gas containing nitrogen oxides is efficiently purified without the necessary use of catalysts by contacting the exhaust gas with a nitrile compound at high temperature in the presence of oxygen, whereby the nitrogen oxides and the nitrile compound are selectively decomposed into harmless materials.