Abstract: A substrate for electron source formation on which a plurality of electron-emitting devices are arranged, comprising a layer where SiO2 is made a main component on the substrate, wherein an etching rate of the SiO2 layer at room temperature in 0.4 wt % of hydrogen fluoride ammonium solution (NH4-HF2) is 150 nm/min or less reducing the time-dependent change of an electron emission characteristic of an electron-emitting device in low cost, sharply improving the increasing speed of a device current If and the uniformity of final arrival values of If sharply reducing the dispersion of the electron emission characteristic, and an electron source and an image-forming apparatus that each use-the substrate.

Abstract: An electron source forming substrate comprises an insulating material film provided on a substrate surface, where an electron-emitting device is arranged. The insulating material film contains a metallic oxide and has a vacancy, so that the vacancy suppresses diffusion of Na from a substrate thereunder, thereby electron-emitting characteristic is maintained stable without adverse effect due to Na even after long time operation.

Abstract: The present invention provides a method of manufacturing a member pattern having a patterned member on a substrate, the method including: a first exposure step of exposing a desired region of a negative type photosensitive material applied to the substrate to light from a first direction; a second exposure step of exposing the desired region of the negative type photosensitive material to light from a second direction opposite to the first direction; a development step of performing development after the exposure steps to form a precursor pattern of the member; and a step of baking the precursor pattern.

Abstract: An electron source forming substrate wherein an insulating material film is disposed on the surface of the substrate at which surface an electron-emitting device is arranged. The insulating material film contains a plurality of metallic oxide particles having an average particle size within the range of 6 nm to 60 nm as expressed in a median value, and suppresses undesirable diffusion of Na from the substrate, thereby makes stable an electron-emitting characteristics, without an adverse effect due to the Na diffusion, even elapsing longer time.

Abstract: Disclosed is an electron source forming substrate provided with an insulating material layer provided on the surface of a substrate, at which surface an electron-emitting device is disposed, wherein the insulating material layer has a plurality of partially exposed metal oxide particles on its surface. Also disclosed are an electron source including a substrate and an electron-emitting device arranged on the substrate, wherein the substrate is an electron source forming substrate as described above, and an image display apparatus including an envelope, an electron-emitting device arranged in the envelope, and an image display member adapted to display images through application of electrons from the electron-emitting device, wherein a substrate on which the electron-emitting device is arranged is an electron source forming substrate as described above.

Abstract: The present invention provides a method of manufacturing a member pattern having a patterned member on a substrate, the method including: a first exposure step of exposing a desired region of a negative type photosensitive material applied to the substrate to light from a first direction; a second exposure step of exposing the desired region of the negative type photosensitive material to light from a second direction opposite to the first direction; a development step of performing development after the exposure steps to form a precursor pattern of the member; and a step of baking the precursor pattern.

Abstract: A substrate for electron source formation on which a plurality of electron-emitting devices are arranged, comprising a layer where SiO2 is made a main component on the substrate, wherein an etching rate of the SiO2 layer at room temperature in 0.4 wt % of hydrogen fluoride ammonium solution (NH4—HF2) is 150 nm/min or less reducing the time-dependent change of an electron emission characteristic of an electron-emitting device in low cost, sharply improving the increasing speed of a device current If and the uniformity of final arrival values of If sharply reducing the dispersion of the electron emission characteristic, and an electron source and an image-forming apparatus that each use the substrate.

Abstract: An electron source forming substrate wherein an insulating material film is disposed on the surface of the substrate at which surface an electron-emitting device is arranged. The insulating material film contains a plurality of metallic oxide particles having an average particle size within the range of 6 nm to 60 nm as expressed in a median value, and suppresses undesirable diffusion of Na from the substrate, thereby makes stable an electron-emitting characteristics, without an adverse effect due to the Na diffusion, even elapsing longer time.

Abstract: Disclosed is an electron source forming substrate provided with an insulating material layer provided on the surface of a substrate, at which surface an electron-emitting device is disposed, wherein the insulating material layer has a plurality of partially exposed metal oxide particles on its surface. Also disclosed are an electron source including a substrate and an electron-emitting device arranged on the substrate, wherein the substrate is an electron source forming substrate as described above, and an image display apparatus including an envelope, an electron-emitting device arranged in the envelope, and an image display member adapted to display images through application of electrons from the electron-emitting device, wherein a substrate on which the electron-emitting device is arranged is an electron source forming substrate as described above.

Abstract: An electron source forming substrate comprises an insulating material film provided on a substrate surface, where an electron-emitting device is arranged. The insulating material film contains a metallic oxide and has a vacancy, so that the vacancy suppresses diffusion of Na from a substrate thereunder, thereby electron-emitting characteristic is maintained stable without adverse effect due to Na even after long time operation.