Patents by Inventor Tadayoshi Shoji

Tadayoshi Shoji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor radiation detector and radiation detection apparatus
    Patent number: 7157716
    Abstract: The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: January 2, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Kitaguchi, Kensuke Amemiya, Kazuma Yokoi, Yuuichirou Ueno, Katsutoshi Tsuchiya, Norihito Yanagita, Shinichi Kojima, Keitaro Hitomi, Tadayoshi Shoji
  • Semiconductor radiation detector and radiation detection apparatus
    Publication number: 20060065847
    Abstract: The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.
    Type: Application
    Filed: January 31, 2005
    Publication date: March 30, 2006
    Inventors: Hiroshi Kitaguchi, Kensuke Amemiya, Kazuma Yokoi, Yuuichirou Ueno, Katsutoshi Tsuchiya, Norihito Yanagita, Shinichi Kojima, Keitaro Hitomi, Tadayoshi Shoji