Abstract: A power tool includes an inner housing (50) at least partially housed within and spaced from an outer housing (30). The inner housing supports a tool (102, 302), such as a pair of shear blades, and houses a motor (80) that drives the tool. The outer housing includes a grip (14, 18) to be grasped by a user. At least one vibration insulator (71-75) can be disposed between the inner housing and the outer housing and in a manner such that the vibration insulator(s) is(are) protected by the outer housing. An intake opening (60a, 60b) and exhaust opening (64a, 64b) can be formed in the inner housing and can be shielded by respective portions of an inner surface of the outer housing.

Abstract: A power tool comprising a hollow pole, a prime mover disposed at one end of the pole, a tool disposed at the other end of the pole, a transmission shaft rotatably disposed within the pole and configured to transmit torque from the prime mover to the tool, a joint mechanism configured to support the tool such that the tool is capable of rotating with respect to the pole, a lock mechanism configured to selectively lock and unlock the joint mechanism, and a clutch mechanism disposed on a pathway of torque transmission from the prime mover to the tool via the transmission shaft, and configured to selectively connect and disconnect the pathway of torque transmission. The lock and clutch mechanisms are coupled with each other such that the clutch mechanism disconnects the pathway of torque transmission when the lock mechanism unlocks the joint mechanism.

Abstract: A power tool is provided with a first unit, a second unit rotatable with respect to the first unit, a lock operation member and a lock cooperative switch. The lock operation member is configured to be operated by the user between a lock position and an unlock position, and configured to prevent rotation of the first and second units at the lock position and allow the rotation between the first and second units at the unlock position. The lock cooperative switch is disposed on the supply circuit of energy to the prime mover, and configured to enable the supply circuit when the lock operation member is at the lock position and cutoff the supply circuit when the lock operation member is at the unlock position.

Abstract: A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlxGa1-xN (0?x?0.05) and AlyGa1-yN (0<y?1 and x<y) layers. Only the AlyGa1-yN layer in the alternating layer is doped with an acceptor.

Abstract: A nitride semiconductor element having a high reverse breakdown voltage and a method of manufacturing the same are provided. A diode (a vertical-type SBD) has an n?-type nitride semiconductor layer (a drift region) formed on an n-type nitride semiconductor substrate, a p-type nitride semiconductor layer formed on the n?-type nitride semiconductor layer, and besides, an anode electrode formed on the p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a relatively-thin first portion and a relatively-thick second portion provided so as to surround the first portion as being in contact with an outer circumference of the first portion. Also, the relatively-thin first portion of the p-type nitride semiconductor layer is formed thinner than the second portion so as to be depleted. The relatively-thick second portion of the p-type nitride semiconductor layer forms a guard ring part.

Abstract: There is provided a group III nitride semiconductor crystal, containing a donor-type impurity and having a hydrogen concentration of 2.0E+16 cm?3 or less in a crystal.

Abstract: A gallium nitride rectifying device includes a p-type gallium nitride based semiconductor layer and an n-type gallium nitride based semiconductor layer, the two layers forming a pn junction with each other. The p-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×1018 cm?3, or the n-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×1016 cm?3.

Abstract: The invention provides a coaxial cable including an internal insulating layer formed on an outer periphery of an electric conductor, a conductive layer formed on an outer periphery of the internal insulating layer, and an external insulating layer formed on an outer periphery of the conductive layer. The conductive layer is made of a metal nanoparticle paste sintered body obtained by sintering metal nanoparticles by irradiation of light toward a metal nanoparticles paste.

Abstract: A nitride semiconductor device includes a first nitride semiconductor layer, and an npn junction structure including a second nitride semiconductor layer of an n-type conductivity, a third nitride semiconductor layer of a p-type conductivity, and a fourth nitride semiconductor layer of an n-type conductivity layered in this order on the first nitride semiconductor layer. The third nitride semiconductor layer includes two or more uncovered regions which are uncovered with the fourth nitride semiconductor layer.

Abstract: A nitride semiconductor element having a high reverse breakdown voltage and a method of manufacturing the same are provided. A diode (a vertical-type SBD) has an n?-type nitride semiconductor layer (a drift region) formed on an n-type nitride semiconductor substrate, a p-type nitride semiconductor layer formed on the n?-type nitride semiconductor layer, and besides, an anode electrode formed on the p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a relatively-thin first portion and a relatively-thick second portion provided so as to surround the first portion as being in contact with an outer circumference of the first portion. Also, the relatively-thin first portion of the p-type nitride semiconductor layer is formed thinner than the second portion so as to be depleted. The relatively-thick second portion of the p-type nitride semiconductor layer forms a guard ring part.

Abstract: There is provided a group III nitride semiconductor crystal, containing a donor-type impurity and having a hydrogen concentration of 2.0E+16 cm?3 or less in a crystal.

Abstract: A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlxGa1-xN (0?x?0.05) and AlyGa1-yN (0<y?1 and x<y) layers. Only the AlyGa1-yN layer in the alternating layer is doped with an acceptor.

Abstract: A power tool comprising a hollow pole, a prime mover disposed at one end of the pole, a tool disposed at the other end of the pole, a transmission shaft rotatably disposed within the pole and configured to transmit torque from the prime mover to the tool, a joint mechanism configured to support the tool such that the tool is capable of rotating with respect to the pole, a lock mechanism configured to selectively lock and unlock the joint mechanism, and a clutch mechanism disposed on a pathway of torque transmission from the prime mover to the tool via the transmission shaft, and configured to selectively connect and disconnect the pathway of torque transmission. The lock and clutch mechanisms are coupled with each other such that the clutch mechanism disconnects the pathway of torque transmission when the lock mechanism unlocks the joint mechanism.

Abstract: A gallium nitride rectifying device includes a p-type gallium nitride based semiconductor layer and an n-type gallium nitride based semiconductor layer, the two layers forming a pn junction with each other. The p-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×1018 cm?3, or the n-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×1016 cm?3.

Abstract: A power tool is provided with a first unit, a second unit rotatable with respect to the first unit, a lock operation member and a lock cooperative switch. The lock operation member is configured to be operated by the user between a lock position and an unlock position, and configured to prevent rotation of the first and second units at the lock position and allow the rotation between the first and second units at the unlock position. The lock cooperative switch is disposed on the supply circuit of energy to the prime mover, and configured to enable the supply circuit when the lock operation member is at the lock position and cutoff the supply circuit when the lock operation member is at the unlock position.

Abstract: To provide a semiconductor diode with a part of a semiconductor lamination portion having a mesa structure portion, which is the part where a pn-junction is formed by lamination of an n-type semiconductor layer and a p-type semiconductor layer on a substrate, comprising: a protective insulating film formed by coating a main surface of the mesa structure portion, a side face of the mesa structure portion in which an interface of the pn-junction is exposed, and an etched and exposed surface of the n-type semiconductor layer; and an anode electrode formed in ohmic-contact with the p-type semiconductor layer exposed from an opening formed on a part of the main surface of the mesa structure portion of the protective insulating film, extending from the main surface, through the side face of the mesa structure portion, to the surface of the n-type semiconductor layer.

Abstract: A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a support substrate by a vapor deposition. The group III source material is an organic metal source material containing Al. The organic metal source material is mixed with a hydrogen halide gas and the mixture of the organic metal source material and the hydrogen halide gas is supplied to the reactor.

Abstract: There is stably provided a nitride semiconductor wafer having a nitride semiconductor layer with high insulating properties, wherein a semi-insulating nitride semiconductor layer is provided on an insulating substrate, with a resistivity of 10 M?cm or more and 100 M?cm or less, and a film thickness of 0.1 ?m or more and 1.5 ?m or less.

Abstract: A coaxial cable includes an internal insulating layer formed on an outer periphery of an electric conductor, and a conductive layer formed on an outer periphery of the internal insulating layer, wherein the conductive layer is made of a metal nanoparticle paste sintered body obtained by sintering metal nanopraticles by irradiation of light toward a metal nanoparticle paste, and an external insulating layer is formed on an outer periphery of the conductive layer.