Patents by Inventor Tadayuki Okawa
Tadayuki Okawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230261635Abstract: A piezoelectric vibration element that includes a piezoelectric piece having a first principal surface and a second principal surface; a via electrode penetrating the piezoelectric piece from the first principal surface to the second principal surface thereof; a conductive etch stop film covering the via electrode on the second principal surface; and a wiring electrode covering at least part of an outer edge of the conductive etch stop film on the second principal surface.Type: ApplicationFiled: April 20, 2023Publication date: August 17, 2023Inventors: Tadayuki OKAWA, Toshio NISHIMURA
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Publication number: 20230246625Abstract: A quartz crystal resonator unit that includes: a piezoelectric blank; a first excitation electrode on a first principal surface and within at least a part of a vibration portion of the piezoelectric blank; a second excitation electrode on a second principal surface and within at least a part of the vibration portion of the piezoelectric blank; a first extended electrode on the first principal surface and electrically connected to the first excitation electrode; and a second extended electrode on the second principal surface and electrically connected to the second excitation electrode; and an insulation layer including a hollow portion which defines a space with the second excitation electrode. A thickness of the first extended electrode is larger than a thickness of the second extended electrode. An end portion of the first extended electrode extends over the hollow portion in a plan view of the piezoelectric vibrator.Type: ApplicationFiled: April 11, 2023Publication date: August 3, 2023Inventors: Toshio NISHIMURA, Yuuki OOI, Tadashi YODA, Tadayuki OKAWA
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Patent number: 11629046Abstract: A MEMS device is provided that includes a piezoelectric film, a first electrode and a second electrode sandwiching the piezoelectric film, a protective film that covers at least part of the second electrode and having a cavity that opens part of the second electrode, a third electrode that contacts the second electrode at least in the cavity and is provided so as to cover at least part of the protective film, and a first wiring layer having a first contact portion in contact with the third electrode.Type: GrantFiled: May 28, 2020Date of Patent: April 18, 2023Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Keiichi Umeda, Tadayuki Okawa, Taku Kamoto, Yuichi Goto, Yoshihisa Inoue, Takehiko Kishi
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Patent number: 10998857Abstract: A resonator including a lower electrode, an upper electrode, and a piezoelectric film that is formed between the lower electrode and the upper electrode. A MEMS device is provided that includes an upper lid that faces the upper electrode, and a lower lid that faces the lower electrode and that seals the resonator together with the upper lid. A CMOS device is mounted on a surface of the upper lid or the lower lid opposite a surface that faces the resonator. The CMOS device includes a CMOS layer and a protective layer that is disposed on a surface of the CMOS layer opposite a surface that faces the resonator. The upper or lower lid to which the CMOS device is joined includes a through-electrode that electrically connects the CMOS device to the resonator.Type: GrantFiled: April 15, 2020Date of Patent: May 4, 2021Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Keiichi Umeda, Tadayuki Okawa, Taku Kamoto
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Publication number: 20200290865Abstract: A MEMS device is provided that includes a piezoelectric film, a first electrode and a second electrode sandwiching the piezoelectric film, a protective film that covers at least part of the second electrode and having a cavity that opens part of the second electrode, a third electrode that contacts the second electrode at least in the cavity and is provided so as to cover at least part of the protective film, and a first wiring layer having a first contact portion in contact with the third electrode.Type: ApplicationFiled: May 28, 2020Publication date: September 17, 2020Inventors: Keiichi Umeda, Tadayuki Okawa, Taku Kamoto, Yuichi Goto, Yoshihisa Inoue, Takehiko Kishi
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Publication number: 20200244222Abstract: A resonator including a lower electrode, an upper electrode, and a piezoelectric film that is formed between the lower electrode and the upper electrode. A MEMS device is provided that includes an upper lid that faces the upper electrode, and a lower lid that faces the lower electrode and that seals the resonator together with the upper lid. A CMOS device is mounted on a surface of the upper lid or the lower lid opposite a surface that faces the resonator. The CMOS device includes a CMOS layer and a protective layer that is disposed on a surface of the CMOS layer opposite a surface that faces the resonator. The upper or lower lid to which the CMOS device is joined includes a through-electrode that electrically connects the CMOS device to the resonator.Type: ApplicationFiled: April 15, 2020Publication date: July 30, 2020Inventors: Keiichi Umeda, Tadayuki Okawa, Taku Kamoto
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Patent number: 10177289Abstract: A mounting substrate that includes external connection electrodes on a rear surface of a base material, and mounting electrodes on a front surface of the base material. In-hole electrodes connect the external connection electrodes and the mounting electrodes. A reflective film containing Al is located between the base material and the mounting electrodes. The reflective film is covered with an insulating film layer.Type: GrantFiled: April 7, 2017Date of Patent: January 8, 2019Assignee: MURATA MANUFACTURING CO., LTD.Inventors: Yuki Fukui, Junko Izumitani, Tadayuki Okawa
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Publication number: 20170213943Abstract: A mounting substrate that includes external connection electrodes on a rear surface of a base material, and mounting electrodes on a front surface of the base material. In-hole electrodes connect the external connection electrodes and the mounting electrodes. A reflective film containing Al is located between the base material and the mounting electrodes. The reflective film is covered with an insulating film layer.Type: ApplicationFiled: April 7, 2017Publication date: July 27, 2017Inventors: YUKI FUKUI, Junko lzumitani, Tadayuki Okawa
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Publication number: 20160079218Abstract: An electrostatic protection device includes a base member formed of a high-resistance semiconductor material. External connecting lands are formed on a first principal surface of the base member along a first direction with a space therebetween. A diode section is formed in the first principal surface of the base member through a semiconductor forming process. The diode section is formed between formation regions of the external connecting lands along the first direction. A high concentration region is a region that has the same polarity as the base member and contains larger amounts of impurities than the base member. The high concentration region is formed in a ring shape enclosing the diode section in a plan view of the base member.Type: ApplicationFiled: November 9, 2015Publication date: March 17, 2016Applicant: MURATA MANUFACTURING CO., LTD.Inventors: Kiminori WATANABE, Seiichi SATO, Toshiya WATANABE, Tadayuki OKAWA, Kiyoto ARAKI, Teiji YAMAMOTO
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Patent number: 6655024Abstract: A method for manufacturing a circuit board having a through-hole for defining via hole, which has a sloped inner wall tilted at a desired tilt angle &thgr;, is provided. The through-hole has an inverted-trapezoidal cross-section and is made using a photomask having a via hole pattern including a light-shielding pattern corresponding to the bottom of the through-hole, and pluralities of light-shielding strips and translucent strips which are arranged alternately and substantially parallel to one another, the pluralities of light-shielding strips and translucent strips corresponding to the sloped inner wall of the through-hole.Type: GrantFiled: April 23, 2002Date of Patent: December 2, 2003Assignee: Murata Manufacturing Co., Ltd.Inventors: Masayuki Suzuki, Makoto Tose, Koji Yoshida, Tadayuki Okawa
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Publication number: 20020179333Abstract: A method for manufacturing a circuit board having a through-hole for defining via hole, which has a sloped inner wall tilted at a desired tilt angle &thgr;, is provided. The through-hole has an inverted-trapezoidal cross-section and is made using a photomask having a via hole pattern including a light-shielding pattern corresponding to the bottom of the through-hole, and pluralities of light-shielding strips and translucent strips which are arranged alternately and substantially parallel to one another, the pluralities of light-shielding strips and translucent strips corresponding to the sloped inner wall of the through-hole.Type: ApplicationFiled: April 23, 2002Publication date: December 5, 2002Applicant: Murata Manufacturing Co., Ltd.Inventors: Masayuki Suzuki, Makoto Tose, Koji Yoshida, Tadayuki Okawa
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Publication number: 20020076660Abstract: A method of forming a wiring pattern which includes the steps of: forming a resist pattern having a shrinkage-inhibiting effect on a substrate; releasing gas from the resist pattern by baking the resist pattern; film-forming an electrode material on the substrate and the resist pattern while the temperature of the substrate is kept lower than the baking temperature of the resist pattern; and removing the electrode material on the resist pattern by separating the resist pattern from the substrate.Type: ApplicationFiled: November 17, 1999Publication date: June 20, 2002Inventors: YUJI TOYOTA, YOSHIHIRO KOSHIDO, KEI FUJIBAYASHI, RYOICHIRO TAKAHASHI, TADAYUKI OKAWA
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Patent number: 6156672Abstract: A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of CeO.sub.2, Sm.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Y.sub.2 O.sub.3, TiO.sub.2, Al.sub.2 O.sub.3, and MgO is used; and removing the resist pattern whereby the dielectric thin film is patterned.Type: GrantFiled: November 19, 1999Date of Patent: December 5, 2000Assignee: Murata Manufacturing Co., Ltd.Inventors: Yoshihiro Koshido, Kei Fujibayashi, Yuji Toyota, Tadayuki Okawa, Ryoichiro Takahashi
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Patent number: 4008858Abstract: An apparatus for treating synthetic resin waste containing thermoplastic synthetic resin and various foreign matter which often contain volatile matter. This apparatus makes it possible to produce articles, from the resin waste, having good mechanical properties by first driving off volatile matter. The apparatus is especially usable for producing long, bar-shaped products, large-sized cylindrical products, piles, sleepers, or molding flasks for concrete works.Type: GrantFiled: July 22, 1975Date of Patent: February 22, 1977Assignee: Mitsubishi Petrochemical Company LimitedInventors: Masatora Yamada, Shigeo Tasaka, Tadayuki Okawa, Taichi Suzuki