Abstract: A semiconductor device includes: a semiconductor layer having a main surface; a first conductive type well region formed on a surface portion of the main surface of the semiconductor layer; a second conductive type source region formed on a surface portion of the well region; a second conductive type drain region formed on the surface portion of the well region at an interval from the source region; a planar gate structure formed on the main surface of the semiconductor layer so as to face a first conductive type channel region disposed between the source region and the drain region; and a memory structure disposed adjacent to a lateral side of the planar gate structure, and including an insulating film formed on the channel region and a charge storage film facing the channel region with the insulating film interposed between the charge storage film and the channel region.

Abstract: A semiconductor device includes a semiconductor layer including a first main surface, a first region of a first conduction type that is formed at a surface layer portion of the first main surface, a second region of a first conduction type that is formed at the surface layer portion of the first main surface and is separated from the first region in a first direction, a channel region of a second conduction type that is formed between the first region and the second region in the surface layer portion of the first main surface, a first gate electrode that is formed in a vicinity of the first region in the first main surface, faces the channel region, and includes a first side portion and a second side portion on an opposite side of the first side portion in the first direction.

Abstract: A compressor includes three suction pipes. A first center of a first suction pipe, a second center of a second suction pipe, and a third center of a third suction pipe are positioned at vertices of a triangle. A first distance between the first center and a center of a compressor main body is smaller than a second distance between the second center and the center of the compressor main body and a third distance between the third center and the center of the compressor main body. A second flow path cross section and a third flow path cross section are positioned on opposite sides of a center connection line sandwiched therebetween. The first suction pipe is connected to a suction port which is at an uppermost position among three suction ports provided in a case.

Abstract: A memory cell formed on the surface of a p-well of a semiconductor substrate includes a drain region and a source region that are formed with a channel region therebetween; an insulating film that is formed to cover the channel region; a gate that is formed on the insulating film; sidewall spacers that are formed to be positioned at side surfaces of the gate and directly above the channel region; a salicide block film that is formed to cover a portion of the drain region, a portion of the source regio, the gat, and the sidewall spacers; a drain salicide layer and a source salicide layer that are formed at the salicide block film and on the drain region and the source region exposed from the salicide block film; and a nitride film that is formed to cover the salicide block film, the drain salicide layer, and the source salicide layer.

Abstract: A semiconductor device includes: a semiconductor layer having a main surface; a first conductive type well region formed on a surface portion of the main surface of the semiconductor layer; a second conductive type source region formed on a surface portion of the well region; a second conductive type drain region formed on the surface portion of the well region at an interval from the source region; a planar gate structure formed on the main surface of the semiconductor layer so as to face a first conductive type channel region disposed between the source region and the drain region; and a memory structure disposed adjacent to a lateral side of the planar gate structure, and including an insulating film formed on the channel region and a charge storage film facing the channel region with the insulating film interposed between the charge storage film and the channel region.

Abstract: In embodiments, a compressor includes three suction pipes. A first center of a first suction pipe, a second center of a second suction pipe, and a third center of a third suction pipe are positioned at vertices of a triangle. A first distance between the first center and a center of a compressor main body is smaller than a second distance between the second center and the center of the compressor main body and a third distance between the third center and the center of the compressor main body. A first flow path cross section of the first suction pipe overlaps a center connection line passing through the center of the compressor main body and a center of an accumulator. A second flow path cross section and a third flow path cross section are positioned on opposite sides of the center connection line sandwiched therebetween. The first suction pipe is connected to a suction port which is at an uppermost position among three suction ports provided in a case.