Patents by Inventor Tadeusz Suski
Tadeusz Suski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11139414Abstract: The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0° to 10°.Type: GrantFiled: September 23, 2016Date of Patent: October 5, 2021Assignees: TOPGAN SP. Z O.O.Inventors: Kafar Anna, Szymon Stanczyk, Anna Nowakowska-Siwinska, Marcin Sarzynski, Tadeusz Suski, Piotr Perlin
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Publication number: 20200259043Abstract: The invention relates to an AlInGaN alloy based superluminescent diode, comprising a gallium nitride bulk substrate, a lower cladding layer with n-type electrical conductivity. Further it includes a lower light-guiding layer with n-type electrical conductivity, a light emitting layer, an electron blocking layer with p-type electrical conductivity, an upper light-guiding layer, an upper cladding layer with p-type electrical conductivity, and a subcontact layer with p-type electrical conductivity. The gallium nitride bulk substrate has a spatially varying surface misorientation in the relation to the crystallographic plane M in range of 0° to 10°.Type: ApplicationFiled: September 23, 2016Publication date: August 13, 2020Inventors: Kafar Anna, Szymon Stanczyk, Anna Nowakowska-Siwinska, Marcin Sarzynski, Tadeusz Suski, Piotr Perlin
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Patent number: 10439362Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.Type: GrantFiled: November 10, 2016Date of Patent: October 8, 2019Assignees: TOPGAN SP. Z O.O., INST. WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUKInventors: Szymon Stanczyk, Anna Kafar, Tadeusz Suski, Szymon Grzanka, Robert Czernecki, Piotr Perlin
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Publication number: 20180331501Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminium content.Type: ApplicationFiled: November 10, 2016Publication date: November 15, 2018Inventors: Szymon Stanczyk, Anna Kafar, Tadeusz Suski, Szymon Grzanka, Robert Czernecki, Piotr Perlin
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Patent number: 8975639Abstract: A surface of a substrate consists of a plurality of neighboring stripes. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). The disorientation angle of each of the flat surfaces is between 0 and 3 degrees and is different for each pair of neighboring flat surfaces. The substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by a MOCVD or MBE method which allow to obtain a non-absorbing mirrors laser diode emitting a light in the wavelength from 380 to 550 nm.Type: GrantFiled: March 15, 2011Date of Patent: March 10, 2015Assignee: Instytut Wysokich Ciśnień Polskiej Akademi NaukInventors: Piotr Perlin, Marcin Sarzyński, Michal Leszczyński, Robert Czernecki, Tadeusz Suski
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Patent number: 8531660Abstract: The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.Type: GrantFiled: March 18, 2011Date of Patent: September 10, 2013Assignees: Instytut Chemi Fizycznej Polskiel Akademii Nauk, Instytut Wysokich Cisnien Polskiej Akademii NaukInventors: Igor Dziecielewski, Robert Holyst, Agnieszka Kaminska, Sylwester Porowski, Tadeusz Suski, Jan Weyher
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Publication number: 20130099246Abstract: A surface of the substrate consists in plurality of neighbouring stripe shaped flat surfaces of a width from 1 to 2000 ?m. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). Disorientation angle of each of the flat surfaces is between 0 and 3 degree and is different for each pair of neighbouring flat surfaces. Substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by MOCVD or MBE method which permits for realization of a non-absorbing mirrors laser diode emitting a light of the wavelength from 380 to 550 nm and a laser diodes array which may emit simultaneously light of various wavelengths in the range of 380 to 550 nm.Type: ApplicationFiled: March 15, 2011Publication date: April 25, 2013Inventors: Piotr Perlin, Marcin Sarzynski, Tadeusz Suski, Robert Czernecki, Michal Leszczynski
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Publication number: 20120147915Abstract: The laser diode is based on Al In Ga N alloy and consists of: a bottom cladding layer of n-type conductivity, a bottom waveguide layer of n-type conductivity, a light emitting layer, an electron blocking layer of p-type conductivity, an upper waveguide layer of p-type conductivity, an upper cladding layer of p-type conductivity and a subcontact layer, doped with acceptors with concentration level above 1020 cm?3. The diode characterizes in that its bottom cladding layer (1) of n-type is made of GaOxN1-x alloy in which x>0.0005. A method of fabricated such laser diode in epitaxial growth of a layer structure consisting of at least a bottom cladding layer of n-type conductivity comprising at least one GaOxN1-x layer (1, 1a, 1c) in which x>0.0005, consisting in that the GaOxN1-x layer (1a, 1c) is fabricated using a high pressure method of nitride solution in gallium at pressure higher than 800 MPa.Type: ApplicationFiled: May 22, 2010Publication date: June 14, 2012Inventors: Piotr Perlin, Marcin Sarzynski, Katarzyna Holc, Michal Leszczynski, Robert Czernecki, Tadeusz Suski, Michal Bockowski, Izabella Grzegory, Boleslaw Lucznik
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Publication number: 20110235031Abstract: The invention relates to a substrate for surface enhanced Raman scattering studies comprising a semiconductor surface with whiskers, coated with metal selected from the group consisting of silver, gold, platinum, copper and/or alloys thereof, where the semiconductor mentioned is a gallium-containing nitride and essentially each whisker contains a linear defect inside.Type: ApplicationFiled: March 18, 2011Publication date: September 29, 2011Applicants: INSTYTUT CHEMII FIZYCZNEJ POLSKIEJ AKADEMII NAUK, INSTYTUT WYSOKICH CISNIEN POLSKIEJ AKADEMII NAUKInventors: Igor Dziecielewski, Robert Holyst, Agnieszka Kaminska, Sylwester Porowski, Tadeusz Suski, Jan Weyher
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Patent number: 7936798Abstract: The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (2), bottom n-type cladding layer (3) and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer (7) and p-type contact layer (8). The electron blocking layer comprises Inx, AlyGa1-x-y, N alloy doped with magnesium where 1?x>0.001 a 1?y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (2, 3, 4), set of optically active layers (5) and set of p-type layers (6, 7, 8) where the p-type waveguide layer (6) and p-type contact layer (7) is deposited with presence of indium in plasma assisted molecular beam epitaxy method.Type: GrantFiled: August 9, 2005Date of Patent: May 3, 2011Assignee: Instytut Wysokich Cisnien Polskiej Akademii NaukInventors: Czeslaw Skierbiszewski, Sylwester Porowski, Izabella Grzegory, Piotr Perlin, Michal Leszczyński, Marcin Siekacz, Anna Feduniewicz-Zmuda, Przemyslaw Wiśniewski, Tadeusz Suski, Michal Boćkowski
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Patent number: 6329215Abstract: The subject of the Invention is the method of fabrication of nitride semiconductor A3B5 such as GaN, AlN, InN or their solid solutions, characterized by p- or n-type conductivity, high intensity of emitted light and high structural quality. The semiconductors obtained by this method are applied in the construction of light emitting devices, light detectors and electric current amplifiers such as for example: highly efficient blue and green light diodes, laser diodes and high power lasers, ultraviolet detectors and high temperature field transistors.Type: GrantFiled: December 6, 1999Date of Patent: December 11, 2001Assignee: Centrum Badan Wysokocisnieniowych Polskiej Akademii NavkInventors: Sylwester Porowski, Jan Jun, Tadeusz Suski, Czeslaw Skierbiszewski, Michal Leszczynski, Izabella Grzegory, Henryk Teisseyre, Jacek Baranowski, Elzbieta Litwin-Staszewska
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Patent number: 6273948Abstract: The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700° C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10° C./cm.Type: GrantFiled: December 6, 1999Date of Patent: August 14, 2001Assignee: Centrum Badan Wysokocisnieniowych Polskiej Akademii NaukInventors: Sylwester Porowski, Michal Bockowski, Izabella Grzegory, Stanislaw Krukowski, Michal Leszczynski, Boleslaw Lucznik, Tadeusz Suski, Miroslaw Wroblewski