Patents by Inventor Tae Ahn

Tae Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070132364
    Abstract: A light emitting device comprises a first pixel portion that includes a light emitting portion arranged between two electrodes on a first substrate, a transistor portion formed on a second substrate arranged to be opposed to the first substrate, a connection electrode extended from one of the two electrodes, and an electrical contact portion in surface contact with both the connection electrode and a drain of the transistor portion.
    Type: Application
    Filed: June 12, 2006
    Publication date: June 14, 2007
    Inventors: Tae Ahn, Hong Lee
  • Publication number: 20060215975
    Abstract: Disclosed herein is an apparatus for measuring the differential mode delay of multimode optical fiber. The apparatus includes a tunable laser source, an interferometer, a data collecting device, and a computer. The tunable laser source outputs light, frequencies of which vary linearly. The interferometer generates multimode light and single mode light by separating light, which is output from the tunable laser source, transmitting the multimode light and the single mode light to the multimode optical fiber, which is a measurement target, and a single mode path, which is a reference, and generating a beating signal by causing the multimode light and the single mode light to interfere with each other. The data collecting device collects the beating signal from the interferometer. The computer converts the frequency components of the beating signal into components in a time domain, and calculating the mode delay of the multimode light.
    Type: Application
    Filed: March 23, 2006
    Publication date: September 28, 2006
    Inventors: Dug Kim, Tae Ahn
  • Publication number: 20060199039
    Abstract: Semiconductor nanocrystals surface-coordinated with a compound containing a photosensitive functional group, a photosensitive composition comprising semiconductor nanocrystals, and a method for forming semiconductor nanocrystal pattern by producing a film using the photosensitive semiconductor nanocrystals or the photosensitive composition, exposing the film to light and developing the exposed film, are provided. The semiconductor nanocrystal pattern exhibits luminescence characteristics comparable to the semiconductor nanocrystals before patterning and can be usefully applied to organic-inorganic hybrid electroluminescent devices.
    Type: Application
    Filed: March 20, 2006
    Publication date: September 7, 2006
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong Park, Eun Jang, Shin Jun, Tae Ahn, Sung Lee
  • Publication number: 20060087868
    Abstract: Disclosed herein is a flyback converter with a synchronous rectifier which is applied to a power supply of a portable computer such as a notebook PC. The flyback converter is operated in a critical conduction mode to turn on/off a main switch at a zero crossing point of an output voltage. The flyback converter is also adapted to supply a driving voltage to a synchronous switch using the output voltage. Therefore, there is no need for a secondary auxiliary coil of a transformer and for a Schottky diode to be connected in parallel with the synchronous switch, resulting in simplification in circuit design.
    Type: Application
    Filed: December 23, 2004
    Publication date: April 27, 2006
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Chan Jang, Tae Ahn, Young Kim, Sung Kim, Tae Park
  • Publication number: 20060081854
    Abstract: An organic electro luminescence device and a fabrication method thereof are provided. An array element is formed on a first substrate and an electro luminescent diode is formed on a second substrate. The array element and the electro luminescent diode are electrically connected together by a spacer. A separator divides a sub pixel into a first region and a second region. In the electro luminescent diode, an anode electrode is formed over the first and second regions. An organic electro luminescent layer and a cathode electrode are formed on the anode electrode of one of the first and second regions.
    Type: Application
    Filed: October 12, 2005
    Publication date: April 20, 2006
    Inventors: Chang Kim, Tae Ahn
  • Publication number: 20060063029
    Abstract: A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer.
    Type: Application
    Filed: December 3, 2004
    Publication date: March 23, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun Jang, Shin Jun, Sung Lee, Jong Park, Seong Choi, Tae Ahn
  • Publication number: 20060062720
    Abstract: A method for preparing cadmium sulfide nanocrystals emitting light at multiple wavelengths. The method comprises the steps of (a) mixing a cadmium precursor and a dispersant in a solvent that weakly coordinates to the cadmium precursor, and heating the mixture to obtain a cadmium precursor solution, (b) dissolving a sulfur precursor in a solvent that weakly coordinates to the sulfur precursor to obtain a sulfur precursor solution, and (c) feeding the sulfur precursor solution to the heated cadmium precursor solution maintained at a high temperature to prepare cadmium sulfide crystals, and growing the cadmium sulfide crystals. Further, cadmium sulfide nanocrystals prepared by the method. The cadmium sulfide nanocrystals have uniform size and shape and can emit light close to white light simultaneously at different wavelengths upon excitation. Due to these characteristics, the cadmium sulfide nanocrystals can be applied to white light-emitting diode devices.
    Type: Application
    Filed: December 3, 2004
    Publication date: March 23, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun Jang, Shin Jun, Tae Ahn, Sung Lee, Seong Choi
  • Publication number: 20060043361
    Abstract: A white light-emitting organic-inorganic hybrid electroluminescence device which has nanocrystals as illuminants. According to the device, a semiconductor nanocrystal layer composed of at least one kind of nanocrystals, a hole transport layer and/or an electron transport layer simultaneously emit light to produce white light, or a semiconductor nanocrystal layer composed of at least two kinds of nanocrystals emits light at different wavelengths to produce white light. The device can be used as a backlight unit for a liquid crystal display, or can be used to manufacture an illuminator.
    Type: Application
    Filed: March 8, 2005
    Publication date: March 2, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Lee, Eun Jang, Shin Jun, Seong Choi, Lyung Pu, Tae Ahn
  • Publication number: 20060013377
    Abstract: The present invention relates to a method for providing an arbitrary sound chosen by a subscriber instead of a conventional RBT, more particularly, to a method for providing a caller with an arbitrary sound chosen by the caller instead of an RBT in case that a called is not a subscriber of a called-based RBT replacement service. The present method comprises: a first step, conducted by an exchanger when a call is received from a terminal, of requesting a first trunk connection to other telephone communication network while requesting a second trunk connection to a sound providing means if it is confirmed that the calling terminal has subscribed to RBT replacement service and the called terminal is a subscriber of said other telephone communication network; and a second step, conducted by the sound providing means, of providing the calling terminal with an RBT-replacing sound set for the calling terminal through the exchanger.
    Type: Application
    Filed: September 9, 2003
    Publication date: January 19, 2006
    Inventors: Tae Ahn, Yeong Tea No, Ok Ryul Yang, Jin Yong Choi
  • Publication number: 20050288743
    Abstract: A transcutaneous recharging system for providing power to an implantable medical device comprises a primary side circuit for transmitting power in the form of magnetic flux; and a secondary side circuit integral to the implantable medical device for receiving the power transmitted from the primary side circuit and for providing the received power to recharge a battery in the implantable medical device, wherein the primary and secondary side circuits are not physically coupled. A variety of attachment configurations are disclosed for attaching and shielding the secondary circuit directly onto the housing of the implantable medical device, inclusive of flexible printed circuit coils and wire coils recessed into helical notches.
    Type: Application
    Filed: June 2, 2005
    Publication date: December 29, 2005
    Inventors: Tae Ahn, Byung Kim, Moon Chanil
  • Publication number: 20050274944
    Abstract: A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further, a method for fabricating the nanocrystal electroluminescence device.
    Type: Application
    Filed: December 3, 2004
    Publication date: December 15, 2005
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun Jang, Shin Jun, Sung Lee, Tae Ahn, Seong Choi
  • Publication number: 20050245073
    Abstract: In a method for forming a contact plug of a semiconductor device, epitaxial silicon is formed as contact material using a solid-phase epitaxy method. The method can obtain reduced contact resistance and improved refresh characteristics, compared with prior arts using polysilicon as contact material. Also, the method uses an SPE method, not a conventional SEG method, to form epitaxial silicon so that it can substantially reduce thermal budget through low-temperature processes. The method can also use conventional polysilicon deposition process without modification to form epitaxial silicon with ease and productivity.
    Type: Application
    Filed: November 30, 2004
    Publication date: November 3, 2005
    Inventors: Seok Lee, Tae Ahn, Sung Park, Jun Cho, Yil Kim
  • Publication number: 20050164512
    Abstract: Disclosed is a method of manufacturing a semiconductor device. The method comprises the steps of: preparing a silicon substrate having a predetermined lower structure including a gate and a bonding area; forming an interlayer dielectric film on the top side of the substrate; forming a photosensitive film pattern, which exposes an area for providing contact, on the interlayer dielectric film; forming a contact hole exposing a bonding area of the substrate by etching the exposed part of the interlayer dielectric film; removing the photosensitive film pattern; performing a dry cleaning on the exposed bonding area of the substrate so that CF based polymer formed in the etching step is removed; and performing a nitrogen-hydrogen plasma processing on the surface of the exposed bonding area of the substrate so that oxygen polymer and remaining CF-based polymer are removed. Therefore, since hydrogen plasma processing is performed after contact etching, ohmic contact characteristics can be secured.
    Type: Application
    Filed: March 17, 2005
    Publication date: July 28, 2005
    Inventors: Jun Cho, Il Kim, Seok Lee, Tae Ahn, Sung Park
  • Publication number: 20050161666
    Abstract: Semiconductor nanocrystals surface-coordinated with a compound containing a photosensitive functional group, a photosensitive composition comprising semiconductor nanocrystals, and a method for forming semiconductor nanocrystal pattern by producing a film using the photosensitive semiconductor nanocrystals or the photosensitive composition, exposing the film to light and developing the exposed film, are provided. The semiconductor nanocrystal pattern exhibits luminescence characteristics comparable to the semiconductor nanocrystals before patterning and can be usefully applied to organic-inorganic hybrid electroluminescent devices.
    Type: Application
    Filed: April 1, 2004
    Publication date: July 28, 2005
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jong Park, Eun Jang, Shin Jun, Tae Ahn, Sung Lee
  • Publication number: 20050042837
    Abstract: According to some embodiments of the invention, a method of controlling the depth of a trench includes forming a mask layer on a semiconductor substrate, forming a sacrificial layer on the mask layer using a material having an etch selectivity ranging from a 1:1 to a 3:1 ratio with respect to the semiconductor substrate, forming a sacrificial pattern and a mask pattern by removing a portion of the sacrificial layer and a portion of the mask layer so that an isolation region of the semiconductor substrate is exposed, and forming a trench in the isolation region of the semiconductor substrate by performing a main etch process using a point at which the top surface of the mask pattern is exposed as an etch stop point so that the sacrificial pattern and the isolation region of the semiconductor substrate are simultaneously etched.
    Type: Application
    Filed: August 10, 2004
    Publication date: February 24, 2005
    Inventors: Jun-Sik Hong, Jeong-Sic Jeon, Tae Ahn, Dong-Hyun Kim
  • Publication number: 20050009281
    Abstract: Disclosed is the method of forming the gate in the semiconductor device. The present method can prevent abnormal oxidization and lifting at the interface of the stack gate consisting of polysilicon and a metal and can be applied to even the single metal gate, by replacing a re-oxidization process for recovering damage of the gate oxide film generated in the gate patterning process with the oxygen plasma treatment.
    Type: Application
    Filed: July 8, 2003
    Publication date: January 13, 2005
    Inventors: Kwan Lim, Heung Cho, Tae Ahn