Abstract: The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGalnN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.

Abstract: A semiconductor device and method of manufacturing the same having pad extending parts, the semiconductor device includes an isolation layer that defines an active region and a gate electrode which traverses the active region. A source region is provided in the active region at one side of the gate electrode, and a drain region is provided in the active region at a second side of the gate electrode. A first interlayer insulating layer covers the semiconductor substrate. A source landing pad is electrically connected to the source region, and a drain landing pad is electrically connected to the drain region. A pad extending part is laminated on one or more of the source landing pad and the drain landing pad. The pad extending part has an upper surface located in a plane above a plane corresponding to the upper surfaces of the source landing pad and the drain landing pad.

Abstract: A solder for device packaging including a plurality of cores, and a coating solder mixed with the cores. The cores are formed of a material having a higher thermal conductivity than the coating solder.

Abstract: A test unit usable with a board having, an electronic component includes at least one testing point provided in each electronic component to test electric properties and a connection state of the plurality of electronic components connected to the board. The test unit usable with a PCB having the electronic component includes a testing point formed on the electronic component, thereby an enhancing high integration of the board.

Abstract: An apparatus for preventing backflow of a gas of a scroll compressor includes: a hermetic container provided with a discharge pipe through which a gas is discharged; a fixed scroll fixedly coupled in the hermetic container; an orbiting scroll orbiting in meshing engagement with the fixed scroll to compress gas together with the fixed scroll; and a backflow preventing means for preventing backflow of a gas discharged through the discharge pipe. Therefore, a gas compressed by an orbiting movement of the fixed scroll and the orbiting scroll is smoothly discharged to the discharge pipe through the hermetic container during operation of the compressor, and the gas discharged to the discharge pipe is prevented from backflowing into the hermetic container when the operation is stopped.

Abstract: A protective circuit of a battery pack and a method of operating the protective circuit prevents the battery cells from being overcharged by directly detecting overcharge or detecting disconnection of sensing wires, which sense the voltage of battery cells, and instantly shuts off the high current being applied to the battery cells when the sensing wires are disconnected. The protective circuit includes at least one battery cell, and a cell voltage detecting unit adapted to detect the voltage of the battery cell. The protective circuit also includes a switch unit, and a control unit adapted to receive a signal from the cell voltage detecting unit and generate a predetermined control signal based on the signal of the cell voltage detecting unit in order to turn off the switch unit when the battery cell is overcharged or the sensing wire is disconnected.

Abstract: Provided is a microfluidic device including at least one inlet, at least one outlet, and a microchannel connecting the inlet and the outlet. The microfluidic device includes two or more electromagnets disposed on sidewalls of the microchannel and oriented in a predetermined direction with respect to the direction in which the microchannel extends.

Abstract: An organic electroluminescence display device and a fabrication method thereof is described. The organic electroluminescence display device includes first and second substrates. A cathode including a transparent conductive material and a thin metal film, an organic electroluminescence (EL) layer formed on the cathode, and an anode formed on the organic EL layer are formed on the first substrate. A driving transistor that contains a drain electrode is formed on the second substrate. The first and second substrates are bonded to each other such that the drain electrode contacts the anode.

Abstract: Provided is a semiconductor device package in which instability of a bonding wire that may occur when a plurality of semiconductor chips are stacked is prevented and which obtains a light, thin and small structure. The semiconductor device package includes a substrate having a plurality of substrate pads on a top surface of the semiconductor device package and includes a plurality of semiconductor chips stacked on the substrate. Each of the semiconductor chips have a chip pad electrically connected to a common pin, e.g., to which a common signal may be concurrently applied to each of the semiconductor chips. An interposer chip, also stacked on the substrate, has a connecting wire electrically connected to the chip pad, the common pin of each of the semiconductor chips being thereby electrically coupled at the connecting wire via the chip pad, and the connecting wire being thereby electrically connected to the substrate pad.

Abstract: Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C2H5)(CH3)}4], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C2H5)(CH3)}4], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.

Abstract: An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction.

Abstract: An exemplary manufacturing method of an inter-metal dielectric of a semiconductor device according to an embodiment of the present invention includes forming a first silicon-rich oxide (SRO) layer on a silicon substrate provided with or otherwise having a copper line layer therein, forming a plasma enhanced fluorosilicate glass (PEFSG) layer on the first SRO layer, plasma-treating the PEFSG layer, and forming a second SRO layer on the plasma-treated PEFSG layer. According to the present invention, the thickness of the second SRO layer of the inter-metal dielectric can be reduced. Consequently, process cost can be reduced, and the total thickness of the inter-metal dielectric can be reduced so as to lower the dielectric constant thereof, reduce the aspect ratio of any via holes that are subsequently formed in the inter-metal dielectric, and potentially increase the yield as a result of the reduced via hole aspect ratio.

Abstract: A separator for a fuel cell includes a first layer that includes stainless steel and tungsten and a second layer that includes stainless steel and tungsten. The first layer contains more tungsten than the second layer so that the separator has anticorrosion properties specifically tailored to the environment of the anode and the cathode.

Abstract: A NOR-type flash memory device comprises a plurality twin-bit memory cells arranged so that pairs of adjacent memory cells share a source/drain region and groups of four adjacent memory cells are electrically connected to each other by a single bitline contact.

Abstract: A suspension and an actuator with the same for a hard disk drive. A suspension includes a load beam having one end portion coupled to a swing arm and another end portion from which a dimple protrudes in a direction toward a disk, and a flexure having one end portion fixed to a surface of the load beam opposing the disk and another end portion in contact with the dimple. A part of the another end portion of the load beam from the dimple in a direction away from the one end portion is bent in a direction opposite to a protruding direction of the dimple, so as to widen a space between the another end portion of the load beam and the another end portion of the flexure.

Abstract: A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping layer, and a second silicon epitaxial layer of second conductivity type is disposed on the first silicon epitaxial layer. An isolation doping layer doped of first conductivity type is disposed at a predetermined region of the second silicon epitaxial layer to define a body region of second conductivity type. A silicon germanium epitaxial layer of second conductivity type is disposed on the body region.

Abstract: Disclosed is a terminal and method for receiving digital broadcasting and displaying channel information including image information. The terminal includes a digital broadcasting reception unit for receiving digital broadcasting channel guide information; a mobile communication unit for receiving image guide information about broadcast programs; a memory unit for storing the digital broadcasting channel guide information received through the digital broadcasting reception unit and the image guide information received through the mobile communication unit; a control unit for searching the digital broadcasting channel guide information stored in the memory unit for guide information about broadcast programs corresponding to the image guide information stored in the memory unit, and combining the searched guide information about broadcast programs with the image guide information; and a display unit for displaying the combined information.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which an impurity ion area is formed in a semiconductor substrate to form a transfer path for optical charges. Dead zone and dark current characteristics are thereby simultaneously improved. The CMOS image sensor includes a first conductive type semiconductor substrate, a device isolation film, a gate electrode, a second conductive type first impurity ion area and a first conductive type first impurity ion area formed with a deposition structure in the semiconductor substrate below the gate electrode, a second conductive type second impurity ion area, and a first conductive type second impurity ion area formed on a surface of the second conductive type second impurity ion area.

Abstract: This invention relates to a liquid crystal display device that is adaptive for being made in small size as well as shortening process time, and a fabricating method thereof. A liquid crystal display device according to an embodiment of the present invention includes an upper substrate where a common electrode is formed; a lower substrate that faces the upper substrate; a plurality of gate drive integrated circuits that supplies a gate signal to a gate line that is located on the lower substrate; a plurality of data drive integrated circuits that supplies a data signal to a data line that is located on the lower substrate; a common line that supplies a common voltage to the common electrode through the gate drive integrated circuit and the data drive integrated circuit when driving a liquid crystal; and a conductive sealant that electrically connects the common electrode to the common line in one of an area of between adjacent gate drive integrated circuits and between adjacent data drive integrated circuits.

Abstract: An image display device to display both a 2-D image and a 3-D image. The image display device includes a display element, an image separation unit, a polarization conversion switch, and a birefringence element. The display element emits light according to image information for a left eye and image information for a right eye. The image separation unit separates the emitted light into an image for the left eye and an image for the right eye. The polarization conversion switch sequentially switches the polarization direction of the incident light. The birefringence element transmits or refracts the light, depending on the polarization direction of the light that has passed through the polarization conversion switch. An image, whose polarization direction has been switched by the polarization conversion switch, is shifted when passing through the birefringence element, whereby the left eye image and the right eye image resolution is improved.