Abstract: A wireless charging method includes determining whether at least one wireless charging device is in a wireless charging area. When it is determined that there is one wireless charging device in the wireless charging area, the wireless charging device is charged. When it is determined that at least two wireless charging devices are in the wireless charging area, the priority of wireless charging among the at least two wireless charging devices is determined, and the wireless charging device having higher priority is wirelessly charged.

Abstract: A wireless charging method includes determining whether at least one wireless charging device is in a wireless charging area. When it is determined that there is one wireless charging device in the wireless charging area, the wireless charging device is charged. When it is determined that at least two wireless charging devices are in the wireless charging area, the priority of wireless charging among the at least two wireless charging devices is determined, and the wireless charging device having higher priority is wirelessly charged.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Abstract: A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.

Abstract: A semiconductor device including a recessed channel transistor, and a method of manufacturing the same, provide: a substrate in which an isolation trench is provided; an isolation layer provided in the isolation trench so as to define a pair of source/drain regions in the substrate; a gate pattern provided in the isolation trench between the pair of source/drain regions, the gate pattern having a top surface at a same level as a top surface of the isolation layer and having a bottom surface at a lower depth than the pair of source/drain regions with respect to a top surface of the substrate; and a gate insulating layer provided between the substrate and the gate pattern at a bottom surface of the isolation trench.

Abstract: Recessed channel transistor (RCT) devices, methods of manufacturing the RCT devices, and a display apparatuses including the RCT devices. A RCT device includes a substrate, a first trench in the substrate and having a first width; a first gate insulating layer on an inner wall of the first trench; a first recess gate on the first gate insulating layer and having a groove in a center portion of an upper surface of the first recess gate; and a source and drain in the substrate on both sides of the first recess gate.

Abstract: A semiconductor device comprises a recessed trench in a substrate, a gate insulating layer including a first portion and a second portion, the first portion having a first thickness and covering lower portions of sidewalls of the recessed trench and a bottom surface of the recessed trench, and the second portion having a second thickness and covering upper portions of the sidewalls of the recessed trench, the second thickness being greater than the first thickness, a gate electrode filling the recessed trench, a first impurity region having a first concentration and disposed at opposing sides of the gate electrode, and a second impurity region having a second concentration greater than the first concentration and disposed on the first impurity region to correspond to the second portion of the gate insulating layer.