Abstract: A method of manufacturing a light generating device and a light generating device manufactured through the method are disclosed. The method of manufacturing a light generating device according to an exemplary embodiment of the present invention, includes preparing a semiconductor stacking structure including a p-type semiconductor layer, an n-type semiconductor layer and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer; forming a metal thin film on the n-type semiconductor layer or on the p-type semiconductor layer; annealing the metal thin film to form a grain boundary at the metal thin film; applying liquid with graphite powder to the metal thin film with the grain boundary; thermally treating the semiconductor stacking structure to which the liquid with graphite powder is applied; and removing the metal thin film with the grain boundary.

Abstract: A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.

Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

Abstract: Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to light in the entire range and constructed by using a resistance change material of which resistance state is to be changed from a high resistance state to a low resistance state if a voltage exceeding a threshold voltage inherent in a material is applied so that conducting filaments are formed is formed between an electrode pad and a semiconductor layer of a light emitting device. The transparent electrode has high transmittance with respect to the light in a UV wavelength range as well as in a visible wavelength range generated in the light emitting device. Since the conductivity of the transparent electrode is heightened due to the formation of the conducting filaments, the transparent electrode has good ohmic contact characteristic with respect to a semiconductor layer.

Abstract: Provided is a light receiving device including a transparent electrode and a method of manufacturing the light receiving device. A transparent electrode is formed so as to be in contact with a photoelectric conversion layer which absorbs light to generate electric energy, and the transparent electrode is formed by using a resistance change material which has high transmittance with respect to light in the entire wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state if a voltage exceeding a threshold voltage inherent in the resistance change material so that conducting filaments are formed in the transparent electrode. Accordingly, since the transparent electrode has high transmittance characteristic with respect to the light in the entire wavelength range and high conductivity characteristic, the light receiving device also has high photoelectric conversion efficiency and good electric characteristics.

Abstract: The present invention relates to a light-emitting device that is capable of preventing an increase in forward voltage while improving optical output characteristics, and to a method for manufacturing same.

Abstract: According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.

Abstract: Provided is an organic light emitting device including a transparent electrode in which conducting filaments are formed and a method of manufacturing the same. In the organic light emitting device, a transparent electrode of an organic light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material is applied to the material, so that it is possible to obtain the transparent electrode having high transmittance with respect to light in a UV wavelength range as well as light in a visible wavelength range generated by the organic light emitting device and having high conductivity.

Abstract: A silicon-based negative active material that includes a core including silicon oxide represented by SiOx (0<x<2); and a coating layer including metal oxide, and the metal of the metal oxide includes aluminum (Al), titanium (Ti), cobalt (Co), magnesium (Mg), calcium (Ca), potassium (K), sodium (Na), boron (B), strontium (Sr), barium (Ba), manganese (Mn), nickel (Ni), vanadium (V), iron (Fe), copper (Cu), phosphorus (P), scandium (Sc), zirconium (Zr), niobium (Nb), chromium (Cr), and/or molybdenum (Mo), the core has a concentration gradient where an atom % concentration of a silicon (Si) element decreases to the center of the core, and an atom % concentration of an oxygen (O) element increases to the center, and a depth from the surface contacting the coating layer where a concentration of the silicon (Si) element is about 55 atom % corresponds to about 2% to about 20% of a diameter of the core.

Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

Abstract: Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic contact characteristic with respect to a semiconductor layer and and a method of manufacturing the light emitting device. A transparent electrode of a light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material applied to the material, so that it is possible to obtain high transmittance with respect to light in a UV wavelength range.

Abstract: In a semiconductor power device and method of the same, the semiconductor device includes a substrate, a gate electrode structure, first impurity regions, an insulating interlayer, first contact plugs and a first metal pattern. The substrate includes an active region and a termination region. The gate electrode structure includes a first gate electrode and a second gate electrode buried in the substrate, and upper surfaces of the gate electrode structure are lower than an upper surface of the substrate between the first and second gate electrodes. The first impurity regions are formed in the substrate between the first and second electrodes. The insulating interlayer having a flat top surface is formed on the substrate and the gate electrode structure. The first contact plugs are formed through the insulating interlayer, and the first contact plugs contact the first impurity regions. The first metal pattern having a flat top surface is formed on the first contact plugs and the insulating interlayer.

Abstract: Provided are a transparent electrode and a method for forming the transparent electrode. First electrodes having high conductivity are formed with a pattern on the semiconductor layer to be in ohmic contact with the semiconductor layer where the transparent electrode is to be formed, and second electrodes having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range are formed so that spaces between the first electrodes formed with the pattern are filled with second electrodes, so that it is possible to obtain a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic characteristic with respect to a semiconductor layer.

Abstract: A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth.

Abstract: Provided are a method for forming a transparent electrode and a semiconductor device where the transparent electrode is formed by using the method. The method for forming a transparent electrode includes: forming a transparent electrode by using a transparent material of which resistance state is to be changed from a high resistance state into a low resistance state according to an applied electric field; and performing a forming process of changing the resistance state of the transparent electrode into the low resistance state by applying a voltage to the transparent electrode, so that the transparent electrode has conductivity. Accordingly, it is possible to form the transparent electrode having good ohmic characteristic with respect to the semiconductor layer formed above or below the transparent electrode and high transmittance with respect to the light having a short wavelength in a UV wavelength range as well as the light in visible wavelength range.

Abstract: The present invention relates to a method for manufacturing a light-emitting device and the light-emitting device manufactured using same, which can reduce manufacturing costs, form nanopatterns in a large area, and increase light extraction efficiency. One embodiment of the present invention discloses the method for manufacturing a light-emitting device, comprising: a light-emitting structure preparation step for preparing a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are formed sequentially; a light extraction layer formation step for forming the upper part of the second conductive semiconductor layer as a light extraction layer having an uneven pattern; a dipping step for dipping the light-emitting structure having the light extraction layer in a solution in which nanomaterials are dispersed; and an adsorption step for adsorbing the nanomaterials to the light extraction layer.

Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

Abstract: The present invention relates to a light-emitting device that is capable of preventing an increase in forward voltage while improving optical output characteristics, and to a method for manufacturing same.

Abstract: A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width.

Abstract: A light generating device and a method of manufacturing the light generating device are disclosed. The light generating device includes a p-type semiconductor layer, an n-type semiconductor layer, an active layer, a p-type electrode and an n-type electrode. The active layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The p-type electrode provides the p-type semiconductor layer with holes. The n-type electrode provides the n-type semiconductor layer with electrons. At least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively. Therefore, light efficiency is enhanced.