Patents by Inventor Tae-Geun Kim

Tae-Geun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9825201
    Abstract: Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic contact characteristic with respect to a semiconductor layer and and a method of manufacturing the light emitting device. A transparent electrode of a light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material applied to the material, so that it is possible to obtain high transmittance with respect to light in a UV wavelength range.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: November 21, 2017
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun Kim, Hee-Dong Kim
  • Patent number: 9793423
    Abstract: Provided is a light receiving device including a transparent electrode and a method of manufacturing the light receiving device. A transparent electrode is formed so as to be in contact with a photoelectric conversion layer which absorbs light to generate electric energy, and the transparent electrode is formed by using a resistance change material which has high transmittance with respect to light in the entire wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state if a voltage exceeding a threshold voltage inherent in the resistance change material so that conducting filaments are formed in the transparent electrode. Accordingly, since the transparent electrode has high transmittance characteristic with respect to the light in the entire wavelength range and high conductivity characteristic, the light receiving device also has high photoelectric conversion efficiency and good electric characteristics.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: October 17, 2017
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun Kim, Hee-Dong Kim
  • Patent number: 9768359
    Abstract: A semiconductor device is disclosed, and the semiconductor device comprises: a semiconductor layer; and a transparent electrode which is formed from a resistance switching material and is formed on one side of the semiconductor layer, wherein the transparent electrode includes a channel on which an electron is capable of hopping and a conductive path formed by applying a voltage that is a threshold voltage or more, and the threshold voltage for forming the conductive path is lowered by the channel.
    Type: Grant
    Filed: January 15, 2015
    Date of Patent: September 19, 2017
    Assignee: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Tae Geun Kim, Kyung Heon Kim
  • Patent number: 9768358
    Abstract: Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to light in the entire range and constructed by using a resistance change material of which resistance state is to be changed from a high resistance state to a low resistance state if a voltage exceeding a threshold voltage inherent in a material is applied so that conducting filaments are formed is formed between an electrode pad and a semiconductor layer of a light emitting device. The transparent electrode has high transmittance with respect to the light in a UV wavelength range as well as in a visible wavelength range generated in the light emitting device. Since the conductivity of the transparent electrode is heightened due to the formation of the conducting filaments, the transparent electrode has good ohmic contact characteristic with respect to a semiconductor layer.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: September 19, 2017
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun Kim, Hee-Dong Kim
  • Patent number: 9645484
    Abstract: Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: May 9, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seong-sue Kim, Hwan-seok Seo, In-sung Kim, Tae-geun Kim
  • Publication number: 20170098732
    Abstract: Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic contact characteristic with respect to a semiconductor layer and and a method of manufacturing the light emitting device. A transparent electrode of a light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material applied to the material, so that it is possible to obtain high transmittance with respect to light in a UV wavelength range.
    Type: Application
    Filed: December 15, 2016
    Publication date: April 6, 2017
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun KIM, Hee-Dong KIM
  • Publication number: 20170084792
    Abstract: Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to light in the entire range and constructed by using a resistance change material of which resistance state is to be changed from a high resistance state to a low resistance state if a voltage exceeding a threshold voltage inherent in a material is applied so that conducting filaments are formed is formed between an electrode pad and a semiconductor layer of a light emitting device. The transparent electrode has high transmittance with respect to the light in a UV wavelength range as well as in a visible wavelength range generated in the light emitting device. Since the conductivity of the transparent electrode is heightened due to the formation of the conducting filaments, the transparent electrode has good ohmic contact characteristic with respect to a semiconductor layer.
    Type: Application
    Filed: December 6, 2016
    Publication date: March 23, 2017
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun KIM, Hee-Dong KIM
  • Publication number: 20170084793
    Abstract: A semiconductor device is disclosed, and the semiconductor device comprises: a semiconductor layer; and a transparent electrode which is formed from a resistance switching material and is formed on one side of the semiconductor layer, wherein the transparent electrode includes a channel on which an electron is capable of hopping and a conductive path formed by applying a voltage that is a threshold voltage or more, and the threshold voltage for forming the conductive path is lowered by the channel.
    Type: Application
    Filed: January 15, 2015
    Publication date: March 23, 2017
    Applicant: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Tae Geun KIM, Kyung Heon KIM
  • Patent number: 9570699
    Abstract: Provided is an organic light emitting device including a transparent electrode in which conducting filaments are formed and a method of manufacturing the same. In the organic light emitting device, a transparent electrode of an organic light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material is applied to the material, so that it is possible to obtain the transparent electrode having high transmittance with respect to light in a UV wavelength range as well as light in a visible wavelength range generated by the organic light emitting device and having high conductivity.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: February 14, 2017
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun Kim, Hee-Dong Kim
  • Patent number: 9559262
    Abstract: Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to light in the entire range and constructed by using a resistance change material of which resistance state is to be changed from a high resistance state to a low resistance state if a voltage exceeding a threshold voltage inherent in a material is applied so that conducting filaments are formed is formed between an electrode pad and a semiconductor layer of a light emitting device. The transparent electrode has high transmittance with respect to the light in a UV wavelength range as well as in a visible wavelength range generated in the light emitting device. Since the conductivity of the transparent electrode is heightened due to the formation of the conducting filaments, the transparent electrode has good ohmic contact characteristic with respect to a semiconductor layer.
    Type: Grant
    Filed: July 30, 2013
    Date of Patent: January 31, 2017
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun Kim, Hee-Dong Kim
  • Patent number: 9559251
    Abstract: Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic contact characteristic with respect to a semiconductor layer and a method of manufacturing the light emitting device. A transparent electrode of a light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material applied to the material, so that it is possible to obtain high transmittance with respect to light in a UV wavelength range.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: January 31, 2017
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun Kim, Hee-Dong Kim
  • Patent number: 9519220
    Abstract: A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: December 13, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Su-Young Lee, Tae-Geun Kim, Jong-Gul Doh
  • Patent number: 9472622
    Abstract: A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width.
    Type: Grant
    Filed: April 28, 2014
    Date of Patent: October 18, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Hoon Lee, Tae-Geun Kim, Chan-Ho Park, Hyun-Jung Her
  • Patent number: 9437789
    Abstract: A light generating device and a method of manufacturing the light generating device are disclosed. The light generating device includes a p-type semiconductor layer, an n-type semiconductor layer, an active layer, a p-type electrode and an n-type electrode. The active layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The p-type electrode provides the p-type semiconductor layer with holes. The n-type electrode provides the n-type semiconductor layer with electrons. At least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively. Therefore, light efficiency is enhanced.
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: September 6, 2016
    Assignee: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Tae-Geun Kim, Sang-Young Park
  • Patent number: 9406543
    Abstract: A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth.
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: August 2, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Hoon Lee, Tae-Geun Kim, Chan-Ho Park, Hyun-Jung Her
  • Patent number: 9391240
    Abstract: Provided are a method for forming a transparent electrode and a semiconductor device where the transparent electrode is formed by using the method. The method for forming a transparent electrode includes: forming a transparent electrode by using a transparent material of which resistance state is to be changed from a high resistance state into a low resistance state according to an applied electric field; and performing a forming process of changing the resistance state of the transparent electrode into the low resistance state by applying a voltage to the transparent electrode, so that the transparent electrode has conductivity. Accordingly, it is possible to form the transparent electrode having good ohmic characteristic with respect to the semiconductor layer formed above or below the transparent electrode and high transmittance with respect to the light having a short wavelength in a UV wavelength range as well as the light in visible wavelength range.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: July 12, 2016
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae Geun Kim, Hee-Dong Kim
  • Publication number: 20160116835
    Abstract: Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.
    Type: Application
    Filed: August 17, 2015
    Publication date: April 28, 2016
    Inventors: Seong-sue KIM, Hwan-seok SEO, In-sung KIM, Tae-geun KIM
  • Patent number: 9287463
    Abstract: A method of manufacturing a light generating device and a light generating device manufactured through the method are disclosed. The method of manufacturing a light generating device according to an exemplary embodiment of the present invention, includes preparing a semiconductor stacking structure including a p-type semiconductor layer, an n-type semiconductor layer and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer; forming a metal thin film on the n-type semiconductor layer or on the p-type semiconductor layer; annealing the metal thin film to form a grain boundary at the metal thin film; applying liquid with graphite powder to the metal thin film with the grain boundary; thermally treating the semiconductor stacking structure to which the liquid with graphite powder is applied; and removing the metal thin film with the grain boundary.
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: March 15, 2016
    Assignee: INTELLECTUAL DISCOVERY CO., LTD.
    Inventors: Tae-Geun Kim, Jae-Hoon Lee
  • Publication number: 20160048079
    Abstract: A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.
    Type: Application
    Filed: May 8, 2015
    Publication date: February 18, 2016
    Inventors: Su-Young LEE, Tae-Geun KIM, Jong-Gul DOH
  • Patent number: 9239516
    Abstract: A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: January 19, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-Geun Kim, Dong-Wan Kim, Dong-Gun Lee, Seong-Sue Kim