Abstract: An electrode includes an electrode active material layer, wherein the electrode active material layer includes an electrode active material and a conductive agent, wherein the conductive agent includes a first conductive agent and a second conductive agent, wherein the first conductive agent includes a secondary particle in which a plurality of graphene sheets are arranged in different directions and a portion of one graphene sheet is connected to a portion of adjacent another graphene sheet, the second conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded to each other, and the carbon nanotube structure is included in an amount of 0.01 wt % to 0.5 wt % in the electrode active material layer. A secondary battery including the electrode is also provided.

Abstract: A negative electrode includes a negative electrode active material layer, wherein the negative electrode active material layer includes a negative electrode active material and a conductive agent, wherein the negative electrode active material includes a silicon-based active material, the silicon-based active material includes SiOx(0?x<2), the conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side, and the carbon nanotube structure is included in an amount of 0.01 wt % to 1.0 wt % in the negative electrode active material layer. A secondary battery including the negative electrode, and a method of preparing same are also provided.

Abstract: A positive electrode active material, a method for producing the same, and a positive electrode and a lithium secondary battery in including the same are disclosed herein. In some embodiments, a method of producing a positive electrode active material includes mixing a lithium transition metal oxide and a carbon-based material having a hollow structure to form a mixture, and mechanically treating the mixture to form a carbon coating layer on the surface of the lithium transition metal oxide, wherein the carbon-based material has a chain shape, and has a specific surface area of 500 m2/g or greater, a graphitization degree (ID/IG) of 1.0 or higher, and a dibutylphthalate (DBP) absorption of 300 mL/100 g or greater.

Abstract: An ink composition including a semiconductor nanoparticle, a first organic ligand, and a polymerizable monomer; and a semiconductor nanoparticle-polymer composite prepared therefrom. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, indium, gallium, and sulfur. The first organic ligand includes an aromatic group and fluorine, and in the ink composition, the amount of the semiconductor nanoparticles is about 2 weight percent to about 70 weight percent based on a total weight of the ink composition.

Abstract: According to an embodiment of the present invention, disclosed is a camera device comprising: a housing; a lens assembly including at least one lens; a driving unit for moving the lens assembly; a main substrate on which an image sensor is provided; and a first substrate and a second substrate electrically connected to the driving unit and arranged on facing side surfaces of the housing to be spaced apart from each other, wherein the main substrate includes a first connection member connected to the first substrate and a second connection member connected to the second substrate.

Abstract: The present invention relates to a negative electrode including a negative electrode collector, a first negative electrode active material layer disposed on the negative electrode collector, and a second negative electrode active material layer disposed on the first negative electrode active material layer, wherein the second negative electrode active material layer includes a second negative electrode active material and a second conductive agent, wherein the second negative electrode active material includes a silicon-based active material, the silicon-based active material includes SiOx (0?x<2), the second conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side, and the carbon nanotube structure is included in an amount of 0.01 wt % to 1.0 wt % in the second negative electrode active material layer, and a secondary battery including the same.

Abstract: A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A?about 0.6 A and B are as defined.

Abstract: The present invention relates to a silicon-carbon composite negative electrode active material, a negative electrode including the same, and a secondary battery, wherein the silicon-carbon composite negative electrode active material includes a core containing SiOX (0?X<2), a carbon layer covering at least a portion of the surface of the core, a carbon nanotube structure positioned on the carbon layer, and a polyvinylidene fluoride coating at least a portion of the carbon nanotube structure, wherein the carbon nanotube structure has a structure formed by arranging and bonding 2 to 5,000 single-walled carbon nanotube units side by side, and a portion of the carbon nanotube structure is bonded to the carbon layer.

Abstract: A negative electrode includes a negative electrode active material layer, wherein the negative electrode active material layer includes a negative electrode active material and a conductive material. The negative electrode active material includes SiOx (0?x<2) particles and the conductive material includes secondary particles in which a portion of one graphene sheet is connected to a portion of an adjacent graphene sheet and a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are coupled to each other, wherein the oxygen content of the secondary particles is 1 wt % to 10 wt % based on the total weight of the secondary particles, the specific surface area of the secondary particles measured by a nitrogen adsorption BET method is 500 m2/g to 1100 m2/g, and the carbon nanotube structure is included in the negative electrode active material layer in an amount of an 0.01 wt % to 1.0 wt %.

Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

Abstract: A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.

Abstract: A method of manufacturing a semiconductor nanoparticle, the semiconductor nanoparticle manufactured therefrom, and an electronic device including the semiconductor nanoparticle. The method of manufacturing the semiconductor nanoparticle includes combining a first semiconductor nanocrystal that includes silver, a Group 13 element, and a chalcogen element, with a gallium precursor, a sulfur precursor, and a silver compound in a medium including an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution including the semiconductor nanoparticles. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and the size is greater than or equal to about 2 nm and less than or equal to about 50 nm.

Abstract: A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Abstract: A positive electrode and a secondary battery including the same are provided. The positive electrode includes a current collector and a positive electrode active material layer disposed on the current collector, wherein the positive active material layer includes a positive electrode active material, a binder, and a multi-walled carbon nanotube, wherein the multi-walled carbon nanotube has an average length of 1-2 ?m and has a length standard deviation of 0.5 ?m or less.

Abstract: An apparatus for welding a secondary battery electrode assembly is disclosed. The electrode assembly may have negative electrodes alternatingly interleaved with positive electrodes. The apparatus may be configured to weld a plurality of non-coated electrode tabs using a sonotrode horn, each of the tabs extending from a respective one of the electrodes having a first same polarity. The sonotrode horn may include a vibration-applying plate and a horn pattern region having a protrusion-type unit pitch pattern disposed on the vibration-applying plate. A radius of curvature of a side surface of the protrusion-type unit pitch pattern disposed at an outer edge of the horn pattern region may be directly proportional to a number of the non-coated electrode tabs. A tip sharpness of the protrusion-type unit pitch pattern disposed at an outer edge of the horn pattern region may be inversely proportional to a number of the non-coated electrode tabs.

Abstract: According to an embodiment of the present invention, disclosed is a camera device comprising: a housing; a lens assembly including at least one lens; a driving unit for moving the lens assembly; a main substrate on which an image sensor is provided; and a first substrate and a second substrate electrically connected to the driving unit and arranged on facing side surfaces of the housing to be spaced apart from each other, wherein the main substrate includes a first connection member connected to the first substrate and a second connection member connected to the second substrate.

Abstract: A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.

Abstract: The present disclosure relates to an all-solid lithium secondary battery and a preparation method thereof, wherein the all-solid lithium secondary battery includes a positive electrode active material layer, a negative electrode active material layer, and a solid electrolyte layer disposed between the positive electrode active material layer and the negative electrode active material layer, wherein the negative electrode active material layer includes platelet carbon nanofibers (Platelet Carbon Nano Fiber, PCNF) and silver nanoparticles.

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.