Abstract: A positive electrode and a secondary battery including the same are provided. The positive electrode includes a current collector and a positive electrode active material layer disposed on the current collector, wherein the positive active material layer includes a positive electrode active material, a binder, and a multi-walled carbon nanotube, wherein the multi-walled carbon nanotube has an average length of 1-2 ?m and has a length standard deviation of 0.5 ?m or less.

Abstract: An apparatus for welding a secondary battery electrode assembly is disclosed. The electrode assembly may have negative electrodes alternatingly interleaved with positive electrodes. The apparatus may be configured to weld a plurality of non-coated electrode tabs using a sonotrode horn, each of the tabs extending from a respective one of the electrodes having a first same polarity. The sonotrode horn may include a vibration-applying plate and a horn pattern region having a protrusion-type unit pitch pattern disposed on the vibration-applying plate. A radius of curvature of a side surface of the protrusion-type unit pitch pattern disposed at an outer edge of the horn pattern region may be directly proportional to a number of the non-coated electrode tabs. A tip sharpness of the protrusion-type unit pitch pattern disposed at an outer edge of the horn pattern region may be inversely proportional to a number of the non-coated electrode tabs.

Abstract: A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.

Abstract: According to an embodiment of the present invention, disclosed is a camera device comprising: a housing; a lens assembly including at least one lens; a driving unit for moving the lens assembly; a main substrate on which an image sensor is provided; and a first substrate and a second substrate electrically connected to the driving unit and arranged on facing side surfaces of the housing to be spaced apart from each other, wherein the main substrate includes a first connection member connected to the first substrate and a second connection member connected to the second substrate.

Abstract: The present disclosure relates to an all-solid lithium secondary battery and a preparation method thereof, wherein the all-solid lithium secondary battery includes a positive electrode active material layer, a negative electrode active material layer, and a solid electrolyte layer disposed between the positive electrode active material layer and the negative electrode active material layer, wherein the negative electrode active material layer includes platelet carbon nanofibers (Platelet Carbon Nano Fiber, PCNF) and silver nanoparticles.

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

Abstract: A camera module according to an embodiment of the present invention comprises: a circuit board; a light source and an image sensor arranged on the circuit board; a housing arranged on the circuit board; an optical member arranged on the light source and including an electrode; and a conductive portion which is arranged in the housing and electrically connects the electrode of the optical member to the circuit board.

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

Abstract: A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.

Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

Abstract: The present disclosure provides a partition wall for an image display device, the partition wall which satisfies 0.8?A/B<1.0 and 0.85?C/B<1.0 when the line width at a thickness of 95% from the lowermost end portion of the partition wall is A, the maximum line width at a thickness of 50 to 90% from the lowermost end portion of the partition wall is B, and the line width at a thickness of 10% from the lowermost end portion of the partition wall is C, with respect to the total thickness of the partition wall, a manufacturing method thereof, and an image display device including the partition wall. The partition wall for an image display device according to the present disclosure can be effectively applied to the manufacture of the color conversion pixels through the inkjet process, and the image display device including the partition wall has excellent luminance and maintains high luminance even when observed from the side surface, thereby exhibiting an effect of excellent viewing angle properties.

Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

Abstract: A color filter including a first layer including first quantum dots and a second layer including second quantum dots that are different from the first quantum dots, and disposed on the first layer, wherein a quantum yield of the first quantum dots is greater than a quantum yield of the second quantum dots, and wherein an absorption of blue light of the second quantum dots is greater than an absorption of the blue light of the first quantum dots.

Abstract: A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.

Abstract: Disclosed herein are an electrode having improved electrode tab welding characteristics configured such that one or more non-coated electrode tabs are provided for a plurality of stacked electrodes having the same polarity in order to maintain welding safety in the case in which the number of electrode layers that are stacked is increased in order to achieve high output and capacity, and a secondary battery including the same. Consequently, it is possible to prevent a plurality of electrode tabs from being cut at the time of welding the electrode tabs. In addition, the lower end of an electrode lead that is welded to non-coated electrode tabs provided for a plurality of stacked electrodes having the same polarity is punched so as to correspond to the non-coated electrode tabs. Consequently, it is possible to improve flexibility for a step formed in the secondary battery electrode.

Abstract: The present invention relates to a positive electrode and a secondary battery including the same, the positive electrode including a current collector and a positive electrode active material layer disposed on the current collector, wherein the positive active material layer includes a positive electrode active material, a binder, and a multi-walled carbon nanotube, wherein the multi-walled carbon nanotube has an average length of 1-2 ?m and has a length standard deviation of 0.5 ?m or less.

Abstract: A pellicle cleaning apparatus includes a stage to support a pellicle, a particle remover above the stage, the particle remover being configured to remove a particle from a first surface of a pellicle, and the particle remover including a cantilever, and an adhesive material on a bottom surface of the cantilever, and a pressure controller adjacent to the stage, the pressure controller being configured to control a pressure of a fluid on a second surface of the pellicle.

Abstract: A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

Abstract: A machining device can lengthen the lifespan of a tool and improve the machining quality of a workpiece by managing the amount of wear of the tool by machining the workpiece using the other portion of the tool when a portion of the tool is worn and the machining performance of the tool is decreased. The machining device includes: a tool-moving unit coupled to a machining unit to change the position of the tool with respect to the workpiece; a supporting unit supporting the workpiece; a sensor unit disposed at the machining unit and measuring a current amount supplied to a machining motor operating the tool, or an operation force of the tool; and a control unit receiving a measurement signal from the sensor unit and transmitting a control signal to the tool-moving unit and the supporting unit.