Abstract: A semiconductor device comprises a substrate including first and second regions; a plurality of conductive line structures disposed over the substrate; a plurality of conductive contact plugs formed between the conductive line structures disposed over the first region of the substrate; and a plurality of dummy dielectric plugs disposed over the second region of the substrate.

Abstract: A dielectric resonator includes a dielectric block having an open surface at one of the surfaces thereof, the remaining surfaces being plated with a conductor. The dielectric block has an inner conductor hole formed at a surface of the dielectric block opposite to the open surface, the inner conductor hole extending a predetermined depth toward the open surface such that it does not perforate through the open surface. An electrode pattern is formed on the open surface such that it faces an end surface of the inner conductor hole, the electrode pattern being adapted to provide an input/output capacitor. The dielectric block has a coupling window formed on a predetermined portion of one of the surfaces of the dielectric block, except for the open surface and the surface formed with the inner conductor hole, at a position adjacent to one of the open surface and the surface formed with the inner conductor hole.

Abstract: The present invention relates to dielectric ceramic compositions for microwave applications consisting of BaO, PbO, Nd.sub.2 O.sub.3, CeO.sub.2, La.sub.2 O.sub.3 and TiO.sub.2 or consisting of compositions including these elements and having a composition formula (I).x(Ba.sub.1-.alpha. Pb.sub..alpha.)O-y?Nd.sub.2 O.sub.3(1-.beta.-.gamma.) CeO.sub.2(.beta.) La.sub.2 O.sub.3(.gamma.) !-zTiO.sub.2 (I)wherein mol %, 6.ltoreq.x.ltoreq.20, 10.ltoreq.y.ltoreq.20, 60.ltoreq.z.ltoreq.75, x+y+z=100; and 0<.alpha..ltoreq.0.5, 0.ltoreq..beta..ltoreq.0.2, 0.ltoreq..gamma..ltoreq.0.2 and 0<1-.beta.-.gamma.<1. These dielectric ceramic compositions for microwave applications have a dielectric constant above 90 at room temperature, a temperature coefficient at the resonant frequency within +5 ppm/.degree.C.

Abstract: The present invention relates to a method for fabricating the plane waveguide path type of the heater buried optical switch, and it exposes the thin film heater removing the second clad layer to speed the heat radiation of the thin film heater by forming flatly the first clad layer having the thin thickness of about 5-10 .mu.m on the channel waveguide path on which the channel waveguide path is formed on the lower clad layer, and forming the second upper clad layer in the thickness of about 15-20 .mu.m on the first clad layer and the thin film heater after the thin heater having the line width of about two times as compared with these of the channel waveguide path is formed at the channel waveguide path and the corresponding portion on the first upper clad layer.