Abstract: A variable resistance memory device includes a substrate, a first conductive line on the substrate, the first conductive line extending in a first horizontal direction, a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction, and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell having a selection element layer, an intermediate electrode layer, and a variable resistance layer, and the variable resistance layer having a shape of stairs with a concave center.

Abstract: Dielectric ceramic compositions for microwave application which are expressed as (1-x)ZnNb2O6- xTiO2 and designed with mole fractions of TiO2 (x=0.2 to 0.8). CuO of 0.5 to 12.0 % by weight of the total weight of the compositions is added to the compositions. At least one additive oxide of 0.05 to 5.0% by weight of the total weight among V2O5, Sb2O5, Bi2O3, B2O3, NiO, WO3, AgNO3, ZnO, and MgO is added to the compositions. They have good sintering and dielectric characteristics and made through simple manufacturing processes, and lower the production costs.