Abstract: The present invention relates to a nano-diamond dispersion solution and a method of preparing the same. The method of preparing a nano-diamond dispersion solution comprises the following steps: providing a nano-diamond aggregation; mixing the nano-diamond aggregation with a metal hydroxide solution and stirring the mixture such that the nano-diamond aggregation is separated, to obtain a mixture solution; stabilizing the mixture solution such that the mixture solution is separated into a supernatant and precipitates; and extracting the supernatant and precipitates.

Abstract: The present invention relates to a nano-diamond dispersion solution and a method of preparing the same. The method of preparing a nano-diamond dispersion solution comprises the following steps: providing a nano-diamond aggregation; mixing the nano-diamond aggregation with a metal hydroxide solution and stirring the mixture such that the nano-diamond aggregation is separated, to obtain a mixture solution; stabilizing the mixture solution such that the mixture solution is separated into a supernatant and precipitates; and extracting the supernatant and precipitates.

Abstract: The present invention relates to a nano-diamond dispersion solution and a method of preparing the same. The method of preparing a nano-diamond dispersion solution comprises the following steps: providing a nano-diamond aggregation; mixing the nano-diamond aggregation with a metal hydroxide solution and stirring the mixture such that the nano-diamond aggregation is separated, to obtain a mixture solution; stabilizing the mixture solution such that the mixture solution is separated into a supernatant and precipitates; and extracting the supernatant and precipitates.

Abstract: The present invention relates to a nano-diamond dispersion solution and a method of preparing the same. The method of preparing a nano-diamond dispersion solution comprises the following steps: providing a nano-diamond aggregation; mixing the nano-diamond aggregation with a metal hydroxide solution and stirring the mixture such that the nano-diamond aggregation is separated, to obtain a mixture solution; stabilizing the mixture solution such that the mixture solution is separated into a supernatant and precipitates; and extracting the supernatant and precipitates.

Abstract: Provided are a thermal siphon reactor and a hydrogen generator including the same. The hydrogen generator including the thermal siphon reactor includes: a housing; a reaction source container disposed in the housing; a reactor tube connected to the reaction source container in which a catalytic reaction of a reaction source provided from the reaction source container occurs; a catalyst layer which is porous, facilitates gas generation by being contacted with the reaction source, and is disposed in the reactor tube; and a product container which is connected to the reactor tube and collects a reaction product generated in the reactor tube, wherein in the reactor tube, a convection channel through which the reaction product is discharged passes through the reactor tube in the lengthwise direction of the reactor tube. The thermal siphon reactor and the hydrogen generator including the same have a self-operating ability, operate at low costs, and have small installment volume.

Abstract: Provided is a method of preparing hydrogen using an amino acid. The method of preparing hydrogen using an amino acid includes: (a) mixing a metal borohydride and a zwitterionic material; (b) adding a solvent thereto to dissolve the mixture; and (c) generating hydrogen from the solution. The provided method of preparing hydrogen using an amino acid can reduce manufacturing costs, reduce a heating value of hydrogen during hydrolysis, increase a hydrogen generation rate, and allow a hydrogen generating apparatus to be small in size.

Abstract: The present invention provides metal oxide catalysts and preparation method thereof, and its application for hydrogen generation from a metal borohydride solution. More particularly, provided are an activation method of a newly prepared catalyst and a regeneration method of a deactivated metal oxide catalyst.

Abstract: Provided is a method of preparing hydrogen using an amino acid. The method of preparing hydrogen using an amino acid includes: (a) mixing a metal borohydride and a zwitterionic material; (b) adding a solvent thereto to dissolve the mixture; and (c) generating hydrogen from the solution. The provided method of preparing hydrogen using an amino acid can reduce manufacturing costs, reduce a heating value of hydrogen during hydrolysis, increase a hydrogen generation rate, and allow a hydrogen generating apparatus to be small in size.

Abstract: The present invention provides unsupported and supported cobalt oxide catalysts and preparation method thereof, and its application for hydrogen generation from a metal borohydride solution. More particularly, provided are an activation method of a newly prepared catalyst and a regeneration method of a deactivated cobalt oxide catalyst.

Abstract: Provided are a thermal siphon reactor and a hydrogen generator including the same. The hydrogen generator including the thermal siphon reactor includes: a housing; a reaction source container disposed in the housing; a reactor tube connected to the reaction source container in which a catalytic reaction of a reaction source provided from the reaction source container occurs; a catalyst layer which is porous, facilitates gas generation by being contacted with the reaction source, and is disposed in the reactor tube; and a product container which is connected to the reactor tube and collects a reaction product generated in the reactor tube, wherein in the reactor tube, a convection channel through which the reaction product is discharged passes through the reactor tube in the lengthwise direction of the reactor tube. The thermal siphon reactor and the hydrogen generator including the same have a self-operating ability, operate at low costs, and have small installment volume.

Abstract: The present invention provides metal oxide catalysts and preparation method thereof, and its application for hydrogen generation from a metal borohydride solution. More particularly, provided are an activation method of a newly prepared catalyst and a regeneration method of a deactivated metal oxide catalyst.

Abstract: The present invention provides unsupported and supported cobalt oxide catalysts and preparation method thereof, and its application for hydrogen generation from a metal borohydride solution. More particularly, provided are an activation method of a newly prepared catalyst and a regeneration method of a deactivated cobalt oxide catalyst.

Abstract: Methods for forming metal lines in semiconductor devices are disclosed. One example method may include forming a lower adhesive layer on a semiconductor substrate; forming a metal layer including aluminum on the lower adhesive layer; forming an anti-reflection layer on the metal layer; forming a photomask on the anti-reflection layer; performing an initial etching, a main etching and an over-etching for the anti-reflection layer, the metal layer and the lower adhesive layer, respectively, in a region which is not protected by the photomask, using C3F8 as a main etching gas; and removing the photomask residual on the anti-reflection layer.

Abstract: A method of fabricating a memory cell in a semiconductor device, by which a data storage function is dichotomized in a manner of controlling a quantity of electrons injected in each floating gate according to drain and control gate voltages applied thereto. The method includes the steps of defining source, first floating gate, control gate, second floating gate, and drain areas on a substrate to have the control gate area lie between the first and second floating gate areas, forming source and drain regions on the source and drain areas of the substrate, respectively, forming a gate oxide layer on the semiconductor substrate, and reducing the gate oxide layer on the first and second floating gate areas in thickness.

Abstract: Methods for forming metal lines in semiconductor devices are disclosed. One example method may include forming a lower adhesive layer on a semiconductor substrate; forming a metal layer including aluminum on the lower adhesive layer; forming an anti-reflection layer on the metal layer; forming a photomask on the anti-reflection layer; performing an initial etching, a main etching and an over-etching for the anti-reflection layer, the metal layer and the lower adhesive layer, respectively, in a region which is not protected by the photomask, using C3F8 as a main etching gas; and removing the photomask residual on the anti-reflection layer.

Abstract: A sintered material based on silicon nitride for use in preparing cutting tools is provided. This material is prepared by sintering a mixture of silicon nitride containing 2-10 percent by weight of yttrium oxide, 1-5 percent by weight of aluminium oxide and 10-40 percent by weight of titanium carbide coated with titanium nitride under hot pressing or sintering followed by hot isostatic pressing at an elevated temperature ranging from 1600.degree. C. to 1800.degree. C. The coated titanium carbide in the form of powder can be formed by depositing a film of titanium nitride on the surface of titanium carbide in the presence of gaseous titanium tetrachloride, hydrogen and nitrogen under the partial pressure of 0.1 to 0.5 atmosphere at 1000.degree. C. to 1500.degree. C. The material can endow the cutting tools with higher toughness and strength and longer life.