Patents by Inventor Tae Heui Kwong

Tae Heui Kwong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • A STRUCTURE AND METHODS OF FORMING THE STRUCTURE
    Publication number: 20240290544
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Application
    Filed: April 5, 2024
    Publication date: August 29, 2024
    Inventor: Tae Heui Kwong
  • Structure and methods of forming the structure
    Patent number: 11955285
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: April 9, 2024
    Inventor: Tae Heui Kwong
  • CAPACITORS, APPARATUS INCLUDING A CAPACITOR AND METHODS FOR FORMING A CAPACITOR
    Publication number: 20210098196
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Application
    Filed: October 9, 2020
    Publication date: April 1, 2021
    Inventor: Tae Heui Kwong
  • Structure and methods of forming the structure
    Patent number: 10804036
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: October 13, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Tae Heui Kwong
  • STRUCTURE AND METHODS OF FORMING THE STRUCTURE
    Publication number: 20190198250
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Application
    Filed: December 31, 2018
    Publication date: June 27, 2019
    Inventor: Tae Heui Kwong
  • Structure and methods of forming the structure
    Patent number: 10170248
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: January 1, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Tae Heui Kwong
  • STRUCTURE AND METHODS OF FORMING THE STRUCTURE
    Publication number: 20180226196
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Application
    Filed: April 9, 2018
    Publication date: August 9, 2018
    Inventor: Tae Heui Kwong
  • Structure and methods of forming the structure
    Patent number: 9941053
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: April 10, 2018
    Assignee: Micron Technology, Inc.
    Inventor: Tae Heui Kwong
  • STRUCTURE AND METHODS OF FORMING THE STRUCTURE (As Amended)
    Publication number: 20170345573
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Application
    Filed: August 14, 2017
    Publication date: November 30, 2017
    Inventor: Tae Heui Kwong
  • Structure and methods of forming the structure
    Patent number: 9734949
    Abstract: Structures, including a capacitor, and methods for forming the structures are provided. One such structure may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric. Other structures and methods are disclosed.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: August 15, 2017
    Assignee: Micron Technology, Inc.
    Inventor: Tae Heui Kwong
  • STRUCTURE COMPRISING MULTIPLE CAPACITORS AND METHODS FOR FORMING THE STRUCTURE
    Publication number: 20150310992
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Application
    Filed: July 2, 2015
    Publication date: October 29, 2015
    Inventor: Tae Heui Kwong
  • Structure comprising multiple capacitors and methods for forming the structure
    Patent number: 9082555
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: July 14, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Tae Heui Kwong
  • CAPACITORS, APPARATUS INCLUDING A CAPACITOR AND METHODS FOR FORMING A CAPACITOR
    Publication number: 20130051126
    Abstract: Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
    Type: Application
    Filed: August 22, 2011
    Publication date: February 28, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Tae Heui Kwong