Patents by Inventor Tae-Ho Yoon

Tae-Ho Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7630521
    Abstract: A biometric identification apparatus and method using bio signals and an artificial neural network, are provided. The biometric identification apparatus includes: a periodic signal extraction unit which extracts one or more periodic signals from an input bio signal; a template calculation unit which calculates a template value using the extracted periodic signals; a template storage unit which stores a plurality of template values corresponding to a plurality of living bodies; and a reading unit which reads the template value that is most approximate to the template value calculated by the template calculation unit from the template storage unit. Accordingly, it is possible to identify a living body by taking into consideration all of the characteristics of bio signals detected from the living body.
    Type: Grant
    Filed: December 21, 2005
    Date of Patent: December 8, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-ho Kim, Kyeong-seop Kim, Tae-ho Yoon
  • Publication number: 20090278224
    Abstract: A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 12, 2009
    Applicant: ASM GENITECH KOREA LTD.
    Inventors: Jong Su Kim, Hyung Sang Park, Yong Min Yoo, Hak Yong Kwon, Tae Ho Yoon
  • Patent number: 7617058
    Abstract: A biometric apparatus and a method thereof using bio signals are provided. The apparatus includes an ADC, a periodic signal extractor, a template storing portion, a comparator. The ADC performs sampling of an input bio signal to convert the sampled bio signal into a digital signal. The periodic signal extractor extracts the periodic signals from the digital signal. The template storing portion registers a plurality of users and stores periodic signals for the respective registered users in a form of templates. The comparator computes similarity between the periodic signals outputted from the periodic signal extractor and the respective templates to select a template whose similarity is greatest and recognizes a user that corresponds to the selected template as a user who corresponds to the input bio signal.
    Type: Grant
    Filed: November 8, 2005
    Date of Patent: November 10, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-ho Kim, Kyeong-seop Kim, Tae-ho Yoon
  • Publication number: 20090155606
    Abstract: Cyclical methods of depositing a silicon nitride film on a substrate are provided. In one embodiment, a method includes supplying a chlorosilane to a reactor in which a substrate is processed; supplying a purge gas to the reactor; and providing ammonia plasma to the reactor. The method allows a silicon nitride film to be formed at a low process temperature and a high deposition rate. The resulting silicon nitride film has a relatively few impurities and a relatively high quality. In addition, a silicon nitride film having good step coverage over features having high aspect ratios and a thin and uniform thickness can be formed.
    Type: Application
    Filed: December 1, 2008
    Publication date: June 18, 2009
    Applicant: ASM GENITECH KOREA LTD.
    Inventors: Tae Ho Yoon, Hyung Sang Park, Hak Yong Kwon, Young Jae Kim
  • Publication number: 20090041952
    Abstract: Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.
    Type: Application
    Filed: July 23, 2008
    Publication date: February 12, 2009
    Applicant: ASM Genitech Korea Ltd.
    Inventors: Tae Ho Yoon, Hyung Sang Park, Yong Min Yoo
  • Patent number: 7169879
    Abstract: The present invention relates to bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenylphosphine oxide compounds and synthesis thereof, more particularly to novel bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenylphosphine oxide compounds having both a perfluorinated benzene substituent and a phosphine oxide moiety. Compounds of the invention can be useful as a monomer for preparing polyimides having a low dielectric constant and a superior adhesion while maintaining the superior thermal and mechanical properties of polyimides themselves, and their synthesis thereof.
    Type: Grant
    Filed: December 17, 2004
    Date of Patent: January 30, 2007
    Assignee: Gwangju Institute of Science and Technology
    Inventors: Tae-Ho Yoon, Chul Woong Lee, Sang Min Kwak
  • Publication number: 20060215883
    Abstract: A biometric identification apparatus and method using bio signals and an artificial neural network, are provided. The biometric identification apparatus includes: a periodic signal extraction unit which extracts one or more periodic signals from an input bio signal; a template calculation unit which calculates a template value using the extracted periodic signals; a template storage unit which stores a plurality of template values corresponding to a plurality of living bodies; and a reading unit which reads the template value that is most approximate to the template value calculated by the template calculation unit from the template storage unit. Accordingly, it is possible to identify a living body by taking into consideration all of the characteristics of bio signals detected from the living body.
    Type: Application
    Filed: December 21, 2005
    Publication date: September 28, 2006
    Inventors: Kyung-ho Kim, Kyeong-seop Kim, Tae-ho Yoon
  • Publication number: 20060106571
    Abstract: A biometric apparatus and a method thereof using bio signals are provided. The apparatus includes an ADC, a periodic signal extractor, a template storing portion, a comparator. The ADC performs sampling of an input bio signal to convert the sampled bio signal into a digital signal. The periodic signal extractor extracts the periodic signals from the digital signal. The template storing portion registers a plurality of users and stores periodic signals for the respective registered users in a form of templates. The comparator computes similarity between the periodic signals outputted from the periodic signal extractor and the respective templates to select a template whose similarity is greatest and recognizes a user that corresponds to the selected template as a user who corresponds to the input bio signal.
    Type: Application
    Filed: November 8, 2005
    Publication date: May 18, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung-ho Kim, Kyeong-seop Kim, Tae-ho Yoon
  • Publication number: 20050267317
    Abstract: The present invention relates to bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenylphosphine oxide compounds and synthesis thereof, more particularly to novel bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenylphosphine oxide compounds having both a perfluorinated benzene substituent and a phosphine oxide moiety. Compounds of the invention can be useful as a monomer for preparing polyimides having a low dielectric constant and a superior adhesion while maintaining the superior thermal and mechanical properties of polyimides themselves, and their synthesis thereof.
    Type: Application
    Filed: December 17, 2004
    Publication date: December 1, 2005
    Applicant: Gwangju Institute of Science and Technology
    Inventors: Tae-Ho Yoon, Chul Lee, Kwak Min
  • Patent number: 6531633
    Abstract: The present invention relates to fluorine-containing triarylphosphine oxide derivatives and preparing method thereof. Particularly, the present invention relates to both fluorine- and phosphine oxide-containing triarylphosphine oxide derivatives which can be utilized in preparing polyimides having excellent adhesion, fire retardancy and low dielectric constant as well as superior thermal stability and mechanical properties, and preparing method thereof.
    Type: Grant
    Filed: June 21, 2001
    Date of Patent: March 11, 2003
    Assignee: Kwangju Institute of Science and Technology
    Inventors: Tae-Ho Yoon, Kwang Un Jeong, Young-Jun Jo
  • Publication number: 20020168480
    Abstract: This invention relates to the surface modified silica by plasma polymerization coating, plasma polymerization method and plasma polymerization devices. Silica, active ingredients of EMC, is coated by plasma polymerization coating in order to enhance the adhesion of silica to epoxy resin and thus to improve the reliability of EMC. The monomers for the plasma polymerization coating were 1,3-diaminopropane, allylamine, pyrrole, 1,2-epoxy-5-hexene, allylmercaptan and allylalcohol, and the surface modified silica was utilized to prepare EMC for electronic devices. The plasma polymerization coating, which is known to be environment-friendly method, provided excellent flexural properties of EMC compared to the conventionally prepared EMC.
    Type: Application
    Filed: June 21, 2001
    Publication date: November 14, 2002
    Inventors: Tae-Ho Yoon, Joon Ho Roh
  • Patent number: 6458668
    Abstract: Disclosed is a method for manufacturing a hetero junction bipolar transistor capable of forming a ledge by using a low-priced contact aligner and in a selective wet etching manner, without having any expensive stepper and dry etching and forming a ballasting resistor, without having an additional NiCr thin film, whereby the manufacturing processes thereof can be embodied in simple and easy manners, thereby improving productivity and an economical efficiency.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: October 1, 2002
    Assignees: Telephus, Inc., Korea Advanced Institute of Science and Technology
    Inventors: Tae Ho Yoon, Sang Hoon Cheon, Song Cheol Hong, Heung Seob Koo, Sea Houng Cho
  • Patent number: 6433190
    Abstract: The present invention relates to fluorine-containing 3,6-di(3′,5′-bis(trifluoromethyl)benzene)pyromellitic dianhydride as a monomer which can be used in preparing polyimides with high glass transition temperature, low dielectric constant and excellent processability, and preparing method thereof.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: August 13, 2002
    Assignee: Kwangju Institute of Science and Technology
    Inventors: Tae-Ho Yoon, Bum-Young Myung
  • Publication number: 20020103385
    Abstract: The present invention relates to fluorine-containing 3,6-di(3′,5′-bis(trifluoromethyl)benzene)pyromellitic dianhydride as a monomer which can be used in preparing polyimides with high glass transition temperature, low dielectric constant and excellent processability, and preparing method thereof.
    Type: Application
    Filed: April 10, 2001
    Publication date: August 1, 2002
    Applicant: KWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Tae-Ho Yoon, Bum-Young Myung
  • Publication number: 20020095057
    Abstract: The present invention relates to fluorine-containing triarylphosphine oxide derivatives and preparing method thereof. Particularly, the present invention relates to both fluorine- and phosphine oxide-containing triarylphosphine oxide derivatives which can be utilized in preparing polyimides having excellent adhesion, fire retardancy and low dielectric constant as well as superior thermal stability and mechanical properties, and preparing method thereof.
    Type: Application
    Filed: June 21, 2001
    Publication date: July 18, 2002
    Inventors: Tae-Ho Yoon, Kwang Un Jeong, Young-Jun Jo
  • Patent number: 6342638
    Abstract: The invention relates to triarylphosphine oxide derivatives containing fluorine substituents that are useful as a monomer in preparation of polymers with improved properties such as chemical resistance and electrical insulating property as well as adhesiveness and flame retardancy. The triarylphosphine oxide derivatives containing fluorine substituents are represented by the chemical formula 1: wherein R1 and R2 are independently a fluorine-substituted alkyl group; and X is hydrogen, a nitro group, or an amine group.
    Type: Grant
    Filed: October 25, 2000
    Date of Patent: January 29, 2002
    Assignee: Kwangju Institute of Science and Technology
    Inventors: Tae-Ho Yoon, Kwang Un Jeong