Abstract: A nitride semiconductor light-emitting device comprises a substrate; a first conductivity type semiconductor layer formed on the substrate; a high-resistance semiconductor layer formed on the first conductivity type semiconductor layer; an active layer formed on the high-resistance semiconductor layer and having multiple quantum wells; and a second conductivity type semiconductor layer formed on the active layer. A first v-pit structure is formed between the high-resistance semiconductor layer and the first conductivity type semiconductor layer, and a second v-pit structure is formed between the active layer and the second conductivity type semiconductor layer. The second v-pit structure is formed such that a lowest part of the second conductivity type semiconductor layer contacts a lowest quantum well of the multiple quantum wells of the active layer through the second v-pit structure.

Abstract: A nitride semiconductor light-emitting device and a method for manufacturing same for improving the electrostatic discharge (ESD) characteristics of the nitride semiconductor light-emitting device. The light-emitting device includes an active layer formed flat using a low conductivity material, on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof, and a second conductive semiconductor layer, or has a v-pit structure on a junction surface between a second conductive semiconductor layer and an active layer formed flat using a low conductivity material on a first conductive semiconductor layer having a v-pit structure on the upper surface thereof. Thus, a v-pit area has a thickness equal to or greater than a critical thickness and thus has very low conductivity, thereby preventing the flow of a current.

Abstract: The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.

Abstract: The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.