Abstract: The inventive concept provides a substrate processing apparatus. The substrate processing apparatus may include a chamber having an interior space, a support unit that supports a substrate in the interior space, a ring unit disposed on an edge region of the support unit when viewed from above, an impedance control unit electrically connected to the ring unit to control a flow or density of plasma in an edge region of the substrate and a filter unit disposed between the ring unit and the impedance control unit.

Abstract: Proposed are a method and an apparatus for determining a cable length for plasma processing equipment. More particularly, proposed is a method of determining a length of a power supply cable for plasma processing equipment that performs plasma processing through power supply at radio frequencies (RF) of several tens of MHz or more.

Abstract: A plasma processing apparatus includes a processing chamber providing space for plasma generation, a chuck member provided in the processing chamber and supporting a substrate, at least two RF power sources providing RF power of different frequencies to the chuck member, a ring member provided to surround the chuck member, an edge electrode arranged in the ring member to be electrically insulated from the chuck member, and a variable impedance circuit being electrically connected to the edge electrode. The variable impedance circuit includes an adjustable impedance configured to control a potential of the edge electrode and a high-frequency stop circuit configured to block high-frequency power from being transmitted to the adjustable impedance.

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus includes: an RF power supply; a process chamber which performs plasma processing by using power applied from the RF power supply; and an impedance matching unit which is disposed between the RF power supply and the process chamber and performs matching, in which the RF power supply includes a first sensor measuring impedance in a direction of the process chamber and the impedance matching unit, and the impedance matching unit performs impedance matching by reflecting impedance measured in the RF power supply through the first sensor.

Abstract: A substrate treating apparatus includes a processing chamber having an inner processing space, a support unit supporting a substrate in the processing space, a gas supply unit supplying processing gas into the treatment space, and a RF power for supplying an RF signal to excite the processing gas into a plasma state. The support unit includes an edge ring surrounding the substrate, a coupling ring disposed under the edge ring and including an electrode therein, and a cable connected to the electrode. The end of the cable is grounded.

Abstract: Provided are an impedance control apparatus for automatically compensating impedance by predicting the occurrence of wear on a ring assembly, and a substrate treating system having the same. The substrate treating system includes a housing for providing a space for treating a substrate, a substrate support member installed inside the housing and for supporting the substrate, a plasma generating unit for generating plasma inside the housing, a ring assembly disposed in circumference of the substrate, and an impedance control unit for controlling the impedance around the ring assembly and automatically compensating the impedance by predicting the occurrence of wear of the ring assembly.

Abstract: A plasma processing apparatus includes a processing chamber providing space for plasma generation, a chuck member provided in the processing chamber and supporting a substrate, at least two RF power sources providing RF power of different frequencies to the chuck member, a ring member provided to surround the chuck member, an edge electrode arranged in the ring member to be electrically insulated from the chuck member, and a variable impedance circuit being electrically connected to the edge electrode. The variable impedance circuit includes an adjustable impedance configured to control a potential of the edge electrode and a high-frequency stop circuit configured to block high-frequency power from being transmitted to the adjustable impedance.