Patents by Inventor Tae Hoon Lee

Tae Hoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240132782
    Abstract: A waste wood sleeper pyrolysis apparatus of a hybrid heating type includes a plurality of reactor containers arranged side by side, each having a space in which a waste wood sleeper is placed, a movement rail arranged parallel to an end of one side and an end of the other side of each of the plurality of reactor containers, and a microwave applicator coupled to the movement rail and including a plurality of microwave generators that move to upper portions of the plurality of reactor containers to transmit microwaves into the plurality of reactor containers.
    Type: Application
    Filed: October 15, 2023
    Publication date: April 25, 2024
    Inventors: Tae Hoon KOH, Myung SAGONG, Jae Young LEE, Dong Geun LEE, Hanju YOO
  • Publication number: 20240136210
    Abstract: Provided is an apparatus for treating a substrate, the apparatus including: an equipment front end module including a load port and a transfer frame; a process chamber for performing a process treatment on a substrate; and a load lock chamber disposed in a transfer path of the substrate transferred between the transfer frame and the process chamber, in which the load lock chamber includes: a housing having an interior space; a compartmentalizing plate for compartmentalizing the interior space into a first space, and a second space independent of the first space; and an aligning unit for aligning a notch of the substrate provided in any one of the first space and the second space.
    Type: Application
    Filed: November 1, 2021
    Publication date: April 25, 2024
    Inventors: Jong-Chan LEE, Hyo-Won PARK, Seok-June YUN, Tae-Hoon LEE
  • Publication number: 20240137568
    Abstract: Disclosed is a method and apparatus for encoding/decoding a video. According to an embodiment, provided is a method of setting a level for each of one or more regions, including decoding a definition syntax element related to level definition and a designation syntax element related to target designation from a bitstream; defining one or more levels based on the definition syntax element; and setting a target level designated by the designation syntax element among the defined levels for a target region designated by the designation syntax element.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Jeong-yeon LIM, Jae Seob SHIN, Sun Young LEE, Se Hoon SON, Tae Young NA, Jae Il KIM
  • Publication number: 20240131624
    Abstract: Embodiments of the inventive concept provide a substrate treating apparatus and a substrate treating method for not letting an irradiation region of a laser deviate from a target region, even if a shaking angle of a chemical deviates from an allowable range due to a vibration or an airflow. The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes: a substrate support unit configured to support a substrate having a chemical coated thereon; a laser generation unit configured to irradiate a laser to the substrate; and a light-transmitter positioned along a path at which the laser is irradiated.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 25, 2024
    Applicant: SEMES CO., LTD.
    Inventors: Tae Shin KIM, Ki Hoon CHOI, Tae Hee KIM, Sang Gun LEE, Jin Yeong SUNG, Jang Jin LEE
  • Patent number: 11965446
    Abstract: The present invention relates to a VOC reduction system and a VOC reduction method that applies pulse type thermal energy to a catalyst to activate the catalyst and oxidizes and removes the VOC.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: April 23, 2024
    Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
    Inventors: Jin Hee Lee, Iljeong Heo, Tae Sun Chang, Ji Hoon Park, Sang Joon Kim, Young Jin Kim
  • Publication number: 20240124765
    Abstract: A quantum dot, a quantum dot composite, a composition for preparing a quantum dot composite, a display panel including the quantum dot composite, and an electronic device including the display panel, wherein the quantum dot includes a core including a semiconductor nanocrystal including indium and phosphorus, a shell disposed on the core and including a semiconductor nanocrystal, and a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, both of which are present on the surface of the shell:
    Type: Application
    Filed: September 27, 2023
    Publication date: April 18, 2024
    Inventors: Jong Hoon WON, Deuk Kyu MOON, Shang Hyeun PARK, Tae-Gon KIM, Young Hoon LEE, Deuk Seok CHUNG
  • Publication number: 20240129725
    Abstract: A service identifying and processing method using a wireless terminal message according to an exemplary embodiment of the present invention includes (a) receiving a wireless terminal message by a first entity which is a mobile device; and (b) expressing, by a first agent which is an information processing application program installed on the first entity, entity information of second entity based on the wireless terminal message and service confirmation information related to service provided by the second entity, through an application screen by the first agent.
    Type: Application
    Filed: December 23, 2021
    Publication date: April 18, 2024
    Applicant: ESTORM CO., LTD.
    Inventors: Jong Hyun WOO, Tae Il LEE, Il Jin JUNG, Hee Jun SHIN, Hyung Seok JANG, Min Jae SON, Sang Heon BAEK, Seo Bin PARK, Hyo Sang KWON, Mi Ju KIM, Jung Hoon SONG, Rakhmanov DILSHOD, Dong Hee KIM, Jeon Gjin KIM
  • Publication number: 20240126452
    Abstract: A storage device includes a memory device including a memory block including memory regions, and a controller configured to store read results of read operations by performing the read operations on the memory regions, to determine first reference values of the memory regions, respectively, based on the read results, to determine a second reference value of the memory block based on the first reference values, and to determine whether the memory block is a potential bad block based on the second reference value. Each of the read results is the number of error bits that are included in data that has been read from the memory region in a corresponding read operation, each of the first reference values is the smallest value among the read results of a plurality of read operations for a corresponding memory region, and the second reference value is the greatest value among the first reference values.
    Type: Application
    Filed: March 15, 2023
    Publication date: April 18, 2024
    Applicant: SK hynix Inc.
    Inventors: Do Hyun LEE, Tae Hoon KIM
  • Patent number: 11961679
    Abstract: A multilayer capacitor includes a body including a plurality of dielectric layers and a plurality of internal electrodes stacked in a first direction, and external electrodes, wherein the body includes an active portion, a side margin portion covering at least one of a first surface and a second surface of the active portion opposing each other in a second direction, and a cover portion covering the active portion in the first direction, respective dielectric layers among the plurality of dielectric layers include a barium titanate-based composition, the dielectric layer of the side margin portion includes Sn, and a content of Sn in the dielectric layer of the side margin portion is different from that of Sn in the dielectric layer of the active portion, and the dielectric layer of the side margin portion includes at least some grains having a core-shell structure.
    Type: Grant
    Filed: November 2, 2021
    Date of Patent: April 16, 2024
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jin Woo Kim, Eun Jung Lee, Jong Suk Jeong, Chun Hee Seo, Jong Hoon Yoo, Tae Hyung Kim, Ho Sam Choi, Sim Chung Kang
  • Patent number: 11960236
    Abstract: Proposed are a home port and a substrate processing apparatus using the same. The home port is installed in the substrate processing apparatus to temporarily mount a nozzle for discharging a process liquid to a substrate, and includes a main body having a space therein, a nozzle holder provided at an upper portion of the main body and configured to mount the nozzle, an inclined surface formed below the nozzle holder in the space, a first supply pipe configured to discharge a rinse liquid to a tip of the nozzle, a second supply pipe configured to inject the rinse liquid into the main body, a conductive wire configured to electrically connect the inclined surface and the first supply pipe, and a first switch installed on the conductive wire.
    Type: Grant
    Filed: December 19, 2022
    Date of Patent: April 16, 2024
    Assignee: SEMES CO., LTD.
    Inventors: Young Jun Son, Tae Hoon Lee, Hyun Yoon, Do Yeon Kim
  • Patent number: 11961750
    Abstract: A magnetic transfer apparatus includes: a magnetomotive force source providing magnetic flux, a first magnetic flux distribution circuit connected to one end of the magnetomotive force source, having a single input terminal and a plurality of output terminals, and distributing the magnetic flux, and a second magnetic flux distribution circuit connected to the other end of the magnetomotive force source, having a single output terminal and a plurality of input terminals, and collecting the distributed magnetic flux. The output terminals of the first magnetic flux distribution circuit are disposed to be adjacent to each other to form a pair with the input terminals of the second magnetic flux distribution circuit.
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: April 16, 2024
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Tae-Yeon Seong, Da-Hoon Lee, Jong-Ho Kim
  • Patent number: 11962764
    Abstract: Disclosed are an inter-prediction method and an image decoding apparatus using the same. According to an embodiment of the present invention, there is provided an inter-prediction method including extracting a merge candidate flag and offset information from a bitstream, selecting a merge candidate corresponding to the extracted merge candidate flag from a merge candidate list including neighboring blocks of a current block as merge candidates, deciding a motion vector of the current block by applying the offset information to a motion vector of the selected merge candidate, and generating, as a prediction block of the current block, a block indicated by the motion vector of the current block in a reference picture referenced by the selected merge candidate.
    Type: Grant
    Filed: April 26, 2023
    Date of Patent: April 16, 2024
    Assignee: SK TELECOM CO., LTD.
    Inventors: Tae Young Na, Sun Young Lee, Kyung Hwan Ko, Se Hoon Son, Jae Il Kim
  • Publication number: 20240120454
    Abstract: A display device includes a substrate including a display area and a non-display area, a pixel located in the display area, a pad unit on one side of the non-display area, and a driver connected to the pixel. The pixel includes a first insulating layer, a first light emitting element on the first insulating layer, a second insulating layer on the first light emitting element and exposing one end portion and another end portion of the first light emitting element, a first contact electrode on the second insulating layer and connected to the one end portion of the first light emitting element, and a second contact electrode on the second insulating layer and connected to the other end portion of the first light emitting element. The pad unit includes a pad metal layer, a first pad insulating layer, a second pad insulating layer, and a pad electrode.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Inventors: Jin Yeong KIM, Mi Jin PARK, Sang Ho PARK, Tae Hoon YANG, Sung Jin LEE
  • Publication number: 20240118607
    Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes pre-treating a substrate by cleaning the substrate; etching the substrate by supplying an etchant and heating a substrate supplied with the etchant; and post-treating the substrate after the etching the substrate, and wherein the pre-treating the substrate, the etching the substrate, and the post-treating the substrate are each performed in different chambers, a substrate on which the pre-treating the substrate is completed is transferred in a dry state to a chamber at which the etching the substrate is performed, and a substrate on which the etching the substrate is completed is transferred in a wetted state with a liquid to a chamber at which the post-treating the substrate is performed.
    Type: Application
    Filed: March 14, 2023
    Publication date: April 11, 2024
    Applicant: SEMES CO.,LTD.
    Inventors: Hyun YOON, Ki Hoon CHOI, Seung Un OH, Young Ho PARK, Sang Hyeon RYU, Tae Hee KIM, Sang Gun LEE
  • Patent number: 11956427
    Abstract: A method is disclosed for reconstructing a current block in units of sub-blocks included in the current block. The method includes: decoding transform coefficients in a transform block of the current block, sub-block information indicating a division form of the sub-blocks and transform type information indicating a transform type applied to the transform block from a bitstream; deriving a residual block of the current block from the transform coefficients on the basis of the transform type indicated by the transform type information and the sub-block information; and filtering boundaries of the sub-blocks in a reconstructed block of the current block derived on the basis of the residual block.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: April 9, 2024
    Assignee: SK TELECOM CO., LTD.
    Inventors: Tae Young Na, Sun Young Lee, Kyung Hwan Ko, Se Hoon Son, Jae Il Kim
  • Patent number: 11955471
    Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.
    Type: Grant
    Filed: January 26, 2022
    Date of Patent: April 9, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Ho Do, Dal-Hee Lee, Jin-Young Lim, Tae-Joong Song, Jong-Hoon Jung
  • Publication number: 20240113270
    Abstract: A display device includes a base layer including a first base layer and a second base layer disposed on a rear surface of the first base layer, light emitting elements disposed on a surface of the first base layer, and pads including a first pad and a second pad, which are disposed on the rear surface of the first base layer and are spaced apart from each other. The base layer further includes blocking layers which are disposed between the first base layer and the second base layer and at least portions of the blocking layers do not overlap the pads in a plan view. The blocking layers include a first blocking layer and a second blocking layer, which are disposed in different layers.
    Type: Application
    Filed: August 14, 2023
    Publication date: April 4, 2024
    Applicant: Samsung Display Co., LTD.
    Inventors: Se Hun CHOI, Dong Sung LEE, Byung Hoon KIM, Tae Oh KIM
  • Patent number: 11950522
    Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.
    Type: Grant
    Filed: June 22, 2022
    Date of Patent: April 2, 2024
    Assignee: SK hynix Inc.
    Inventors: Myoung Sub Kim, Tae Hoon Kim, Beom Seok Lee, Seung Yun Lee, Hwan Jun Zang, Byung Jick Cho, Ji Sun Han
  • Publication number: 20240105897
    Abstract: A display device comprises a first substrate comprising a first contact hole, a laser absorption layer disposed on the first substrate and containing amorphous silicon, a first barrier insulating layer disposed on the laser absorption layer, fan-out lines disposed in a metal layer on the first barrier insulating layer and comprising pad portions inserted into second contact holes provided in the first barrier insulating layer and the laser absorption layer, a second barrier insulating layer disposed on the metal layer, a second substrate disposed on the second barrier insulating layer, and a display layer disposed on the second substrate. The second substrate is inserted into a third contact hole provided in the second barrier insulating layer, the first barrier insulating layer, and the laser absorption layer disposed between the pad portions.
    Type: Application
    Filed: July 21, 2023
    Publication date: March 28, 2024
    Applicant: Samsung Display Co., LTD.
    Inventors: Se Hun CHOI, Dong Sung LEE, Mi Sun KIM, Byung Hoon KIM, Tae Oh KIM
  • Publication number: 20240105838
    Abstract: A semiconductor device includes a device region, including a source contact, a drain contact formed on a substrate, and a gate contact formed between the source contact and the drain contact; an isolation region surrounding the device region, the isolation region including an N-type semiconductor region formed on the substrate, a first silicide layer and a second silicide layer formed in the N-type semiconductor region and separated from each other by an isolation layer, and an anode contact and a cathode contact connected to the first silicide layer and the second silicide layer, respectively; and a Schottky barrier diode formed inside the isolation region by a junction of the first silicide layer and the N-type semiconductor region. The anode contact is connected to the source contact, and the cathode contact is connected to the drain contact.
    Type: Application
    Filed: April 18, 2023
    Publication date: March 28, 2024
    Applicant: KEY FOUNDRY CO., LTD.
    Inventor: Tae Hoon LEE