Patents by Inventor Tae Hoon Lee

Tae Hoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ergostenol glycoside derivative
    Patent number: 11059852
    Abstract: The present invention provides ergostenol glycoside derivatives, method for preventing, treating, or alleviating dermatitis using the same. The present invention also provides a method for preparing the ergostenol and glycoside derivatives thereof. The ergostenol and the glycoside derivatives thereof according to the present invention suppress the production of chemokines increasing according to the skin inflammation stimulation and inhibit the activity of transcriptional factors controlling the expression of various inflammation mediators in the prevention and treatment of dermatitis.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: July 13, 2021
    Assignee: ST PHARM CO., LTD.
    Inventors: Hakwon Kim, Tae Hoon Lee, Hoongyu Park, Hyunjeong Oh
  • Quadrangular leaf spring and linear vibration motor including same
    Patent number: 11025145
    Abstract: A quadrangular leaf spring of a quadrangle for generating vibration within a linear vibration motor includes a bottom support having an outer edge of a square form, a top support having a given height with respect to the bottom support and moved up and down by an elastic force of an elastic leg part, and the elastic leg part connected to an inside of the bottom support and upward extended up to the top support. A portion where the elastic leg part and the bottom support are connected is closer to a corner than to a center of each side of the bottom support. A right line of a portion of the elastic leg part connected to the bottom support is extended from the bottom support to the upper side in a concave shape with respect to the center of the leaf spring.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: June 1, 2021
    Assignee: MPLUS CO., LTD.
    Inventors: Nam Sock Kim, Seok Jun Park, Tae Hoon Lee, Dong Jun Lee
  • Sound vibration actuator
    Patent number: 10986448
    Abstract: A sound vibration actuator includes: a casing having an internal space, a coil part coupled to the casing to receive power, a magnet part disposed in the casing, an elastic member whose one surface coupled to the magnet part, a substrate drawn from the internal space, and an external device-coupling part disposed on an outer peripheral surface of the casing to be coupled to an external device, wherein the casing has an underside casing part, a side periphery casing part, and a top casing part, the coil part is coupled to the top casing part, and the external device-coupling part includes a first coupling area coming into contact with a portion of the outer periphery of the side periphery casing part and second coupling areas extended from the first coupling area in a vertical direction to the first coupling area coupled to the external device.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: April 20, 2021
    Assignee: MPLUS CO., LTD.
    Inventors: Yong Jin Kim, Jun Kun Choi, Yeon Ho Son, Yong Tae Kim, Dong Su Moon, Seok Jun Park, Tae Hoon Lee
  • Semiconductor device
    Patent number: 10978587
    Abstract: The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rsp by minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal results. Moreover, a high frequency application achieves useful results by reducing a gate charge Qg for an identical device pitch to that of an alternative technology.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: April 13, 2021
    Assignee: KEY FOUNDRY CO., LTD.
    Inventors: Yu Shin Ryu, Tae Hoon Lee, Bo Seok Oh
  • HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE
    Publication number: 20210104630
    Abstract: A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.
    Type: Application
    Filed: March 4, 2020
    Publication date: April 8, 2021
    Applicant: KEY FOUNDRY CO., LTD.
    Inventors: Jin Seong CHUNG, Tae Hoon LEE
  • Semiconductor device comprising Schottky barrier diodes
    Patent number: 10923603
    Abstract: A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a concentration of the N-type diffused well region is less than a concentration of the first N-type deep well region or the second N-type deep well region, a first P-type well region formed in the first N-type deep well region, a second P-type well region formed in the N-type diffused well region, an insulating film formed to be in contact with the first P-type well region, and a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: February 16, 2021
    Assignee: Key Foundry Co., Ltd.
    Inventors: Yon Sup Pang, Hyun Kwang Shin, Tae Hoon Lee
  • NOVEL MULTI-FUNCTIONAL PEPTIDES AND USE THEREOF
    Publication number: 20200405802
    Abstract: The present invention provides a novel multi-functional peptide that effectively regulates the activity of immune cells while also exhibiting excellent antibacterial activity against various bacteria such as Gram-negative bacteria and Gram-positive bacteria.
    Type: Application
    Filed: March 19, 2020
    Publication date: December 31, 2020
    Applicant: NOVACELL TECHNOLOGY INC.
    Inventors: Tae Hoon LEE, Jae Wang GHIM, Hyun Ju LEE
  • ELECTRONIC DEVICE AND CONTROL METHOD THEREFOR
    Publication number: 20200344308
    Abstract: Disclosed is an electronic device. The electronic device of the present invention comprises: a communication unit; a storage unit for storing a uniform resource locator (URL) designated by an external electronic device and information on specific content provided in the designated URL; and a processor which, when a request for a connection to a designated URL is received from an external electronic device through the communication unit, identifies whether specific content can be provided in the designated URL, and in a case where the specific content cannot be provided, obtains information on another URL that provides content related to the specific content by using stored information, and transmits the obtained information on the another URL to the external electronic device through the communication unit.
    Type: Application
    Filed: August 29, 2018
    Publication date: October 29, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-hoon Lee, Young-hyun Kim, Young-in Park, Han-jin Park, Sung-min Lim, Chang-won Choi
  • PEPTIDE FOR SUPPRESSING OSTEOCLAST DIFFERENTIATION AND USE THEREOF
    Publication number: 20200331967
    Abstract: The peptide of the present invention performs a function, which is the same as or similar to that of natural interleukin (IL)-3, and has superior skin permeability due to the small size thereof. In addition, the peptide of the present invention suppresses the activation of NF-?B and nuclear transition by inhibiting the receptor activator of nuclear factor kappa-B ligand (RANKL)-RANK signaling pathway, and suppresses the expression of a RANKL or an inflammatory cytokine-induced tartrate-resistant acid phosphatase (TRAP), cathepsin K, or TNF receptor type 1 or type 2, thereby inhibiting osteoclast differentiation depending on the treatment concentration. Moreover, the peptide of the present invention can contribute to osteoblast differentiation by promoting the expression of osteoblast differentiation markers such as osteocalcin (OCN), osteoprotegerin (OPG), bone sialoprotein (BSP), or osteopontin (OPN).
    Type: Application
    Filed: April 21, 2020
    Publication date: October 22, 2020
    Inventors: Yong Ji CHUNG, Eun Mi Kim, Eung Ji Lee, Tae-Hoon Lee, A-Reum Han
  • SOUND VIBRATION ACTUATOR
    Publication number: 20200295647
    Abstract: A sound vibration actuator includes: a casing having an internal space formed by an underside casing part, a side periphery casing part, and a top casing part; a first vibration assembly disposed in the internal space of the casing; a second vibration assembly disposed between the first vibration assembly and the top casing part in such a manner as to be coupled to the top casing part; an elastic member whose one surface coupled to the first vibration assembly; and a third vibration assembly disposed between the first vibration assembly and the underside casing part in such a manner as to be coupled to the underside casing part. The sound vibration actuator includes at least three or more vibration assemblies disposed therein, thereby obtaining at least three or more resonance frequencies.
    Type: Application
    Filed: December 5, 2019
    Publication date: September 17, 2020
    Inventors: Jun Kun CHOI, Yong Jin KIM, Yeon Ho SON, Yong Tae KIM, Dong Su MOON, Seok Jun PARK, Tae Hoon LEE
  • SOUND VIBRATION ACTUATOR
    Publication number: 20200296516
    Abstract: A sound vibration actuator includes: a casing having an internal space, a coil part coupled to the casing to receive power, a magnet part disposed in the casing, an elastic member whose one surface coupled to the magnet part, a substrate drawn from the internal space, and an external device-coupling part disposed on an outer peripheral surface of the casing to be coupled to an external device, wherein the casing has an underside casing part, a side periphery casing part, and a top casing part, the coil part is coupled to the top casing part, and the external device-coupling part includes a first coupling area coming into contact with a portion of the outer periphery of the side periphery casing part and second coupling areas extended from the first coupling area in a vertical direction to the first coupling area coupled to the external device.
    Type: Application
    Filed: December 5, 2019
    Publication date: September 17, 2020
    Inventors: Yong Jin KIM, Jun Kun CHOI, Yeon Ho SON, Yong Tae KIM, Dong Su MOON, Seok Jun PARK, Tae Hoon LEE
  • Method of implementing button click using control of input signal
    Patent number: 10725589
    Abstract: A technology for implementing a finer button click of a device including an LRA by reducing the falling time of an LRA after a click is implemented by controlling an input signal applied to the LRA depending on an operating characteristic of the LRA. A user's operational convenience can be improved by omitting a real button positioned in the front part of a mobile phone, and more smooth display watching and manipulation are made possible by increasing the size of a display. Furthermore, the button click of a device including an LRA can be realistically implemented by controlling only the frequency of an input signal without adding a separate device or a control circuit to the LRA.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: July 28, 2020
    Assignee: MPLUS CO., LTD.
    Inventors: Yeon Ho Son, Sung Hoon Jung, Tae Hoon Lee
  • Semiconductor device and method for manufacturing the same
    Patent number: 10680080
    Abstract: A method for manufacturing a semiconductor device includes forming a gate insulation film and a polysilicon layer on a substrate, forming a polysilicon pattern by etching the polysilicon layer, forming an opening in the polysilicon pattern that exposes a part of the polysilicon pattern by forming a mask pattern on the polysilicon pattern, forming a gate electrode by etching the part of the polysilicon pattern exposed through the opening, forming a P-type body region by ion implanting a P-type dopant onto the substrate using the gate electrode as a mask, forming an N-type LDD region on the P-type body region by ion implanting an N-type dopant onto the substrate using the gate electrode as a mask, forming a spacer on a side surface of the gate electrode, and forming an N-type source region on a side surface of the spacer.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: June 9, 2020
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Tae Hoon Lee, Jun Hee Cho, Jin Seong Chung
  • Peptide for suppressing osteoclast differentiation and use thereof
    Patent number: 10669312
    Abstract: The peptide of the present invention performs a function, which is the same as or similar to that of natural interleukin (IL)-3, and has superior skin permeability due to the small size thereof. In addition, the peptide of the present invention suppresses the activation of NF-?B and nuclear transition by inhibiting the receptor activator of nuclear factor kappa-B ligand (RANKL)-RANK signaling pathway, and suppresses the expression of a RANKL or an inflammatory cytokine-induced tartrate-resistant acid phosphatase (TRAP), cathepsin K, or TNF receptor type 1 or type 2, thereby inhibiting osteoclast differentiation depending on the treatment concentration. Moreover, the peptide of the present invention can contribute to osteoblast differentiation by promoting the expression of osteoblast differentiation markers such as osteocalcin (OCN), osteoprotegerin (OPG), bone sialoprotein (BSP), or osteopontin (OPN).
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: June 2, 2020
    Assignee: CAREGEN CO., LTD.
    Inventors: Yong-Ji Chung, Eun-Mi Kim, Eung-Ji Lee, Tae-Hoon Lee, A-Reum Han
  • Linear vibration generator
    Patent number: 10622877
    Abstract: A linear vibration generator in which a coil or a stator is fixed using a simple structure compared to a conventional technology. There is provided a linear vibration generator having advantages of a simplified assembly process and a low production cost by reducing the number of parts that form the inside of the vibration generation device through an improved bracket structure in which a protruding part functions as a central yoke. The protruding part can be easily fabricated by being pressed into a bracket using a press or deep drawing method, and a coil is fixed by a stable structure. There is an advantage of a low production cost.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: April 14, 2020
    Assignee: MPLUS CO., LTD.
    Inventors: Yong Tae Kim, Nam Sock Kim, Tae Hoon Lee
  • SEMICONDUCTOR DEVICE COMPRISING SCHOTTKY BARRIER DIODES
    Publication number: 20200105947
    Abstract: A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a concentration of the N-type diffused well region is less than a concentration of the first N-type deep well region or the second N-type deep well region, a first P-type well region formed in the first N-type deep well region, a second P-type well region formed in the N-type diffused well region, an insulating film formed to be in contact with the first P-type well region, and a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well.
    Type: Application
    Filed: December 4, 2019
    Publication date: April 2, 2020
    Applicant: Magnachip Semiconductor, Ltd.
    Inventors: Yon Sup PANG, Hyun Kwang SHIN, Tae Hoon LEE
  • Urea solution pump module
    Patent number: 10598065
    Abstract: Provided is a urea solution pump module including: a flange portion coupled to cover an opened mounting hole of a urea solution tank; a pump disposed near an upper surface of the flange portion; a filter formed to surround the pump, disposed to be spaced apart from the pump, and coupled to the flange portion; an internal heater disposed between the pump and the filter and coupled to the flange portion; and a first fin having one side connected to the internal heater and the other side disposed near the pump. If the urea solution received in the urea solution tank is frozen, the pump and the urea solution frozen around the pump may be quickly and efficiently thawed.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: March 24, 2020
    Assignee: COAVIS
    Inventors: Tae Hoon Lee, Ji Ho Jung, Jong Hyuk Yoon, Yong Soo Jeon
  • Linear vibrator
    Patent number: 10562066
    Abstract: A linear vibrator having a flexible printed circuit board including a copper film pattern processed in a meander line pattern and, more particularly, a linear vibrator for solving a frequency interference problem between an electromagnetic structure and antenna disposed within a mobile device using a flexible printed circuit board (FPCB) including a copper film pattern processed in a meander line pattern in the linear vibrator. The linear vibrator can avoid resonant frequency interference through the copper film pattern having a frequency region out of the resonant frequency region of an antenna within a mobile device by processing the copper film pattern unique to an FPCB used in a linear vibrator.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: February 18, 2020
    Assignee: MPLUS CO., LTD.
    Inventors: Jun Kun Choi, Yeon Ho Son, Seok Jun Park, Tae Hoon Lee
  • Power semiconductor device and method for manufacturing the same
    Patent number: 10566422
    Abstract: A power semiconductor device includes a drain region and a source region disposed on a substrate, a gate insulating layer and a gate electrode disposed on the substrate and disposed between the drain region and the source region, a protection layer in contact with a top surface of the substrate and a top surface of the gate electrode, a source contact plug connected to the source region, a drain contact plug connected to the drain region, and a field plate plug in contact with the protection layer, wherein a width of the field plate plug is greater than a width of the source contact plug or a width of the drain contact plug.
    Type: Grant
    Filed: August 3, 2018
    Date of Patent: February 18, 2020
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Tae Hoon Lee, Jun Hee Cho, Jin Seong Chung
  • Semiconductor device comprising Schottky barrier diodes
    Patent number: 10566465
    Abstract: A semiconductor device includes a first N-type deep well region and a second N-type deep well region formed in a substrate, an N-type diffused well region formed between the first N-type deep well region and the second N-type deep well region, wherein a concentration of the N-type diffused well region is less than a concentration of the first N-type deep well region or the second N-type deep well region, a first P-type well region formed in the first N-type deep well region, a second P-type well region formed in the N-type diffused well region, an insulating film formed to be in contact with the first P-type well region, and a silicide formed on the N-type diffused well region, such that a Schottky barrier diode is formed between the silicide and the N-type diffused well.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: February 18, 2020
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Yon Sup Pang, Hyun Kwang Shin, Tae Hoon Lee