Abstract: The present disclosure relates to a polybutylene terephthalate resin composition, a method of preparing the same, and a molded article including the same. The polybutylene terephthalate resin composition according to the present disclosure may improve both injection solidification rate and impact strength, which are in a trade-off relationship due to changes in materials used, may satisfy the physical property balance between mechanical properties, fluidity, and heat resistance, and may provide excellent product reliability and appearance quality.

Abstract: Disclosed are a polybutylene terephthalate resin composition, a method of preparing the same and a molded article including the same. The polybutylene terephthalate resin composition can provide an excellent physical property balance between mechanical strength and flame retardancy at a level equivalent to or higher than that of a polyester resin composite material containing a halogen-based flame retardant, has excellent processability due to excellent flowability, and is specifically suitable as a material for automotive electronic components.

Abstract: The present invention relates to a polyester resin composition and a molded article manufactured using the same. According to the present invention, hydrolysis resistance may be improved even under high-temperature and high-humidity conditions. In addition, deviation in laser beam transmittance may be minimized even when the thickness of an injection-molded article is changed, thereby achieving laser weldability. Accordingly, the polyester resin composition of the present invention may be applied to small cameras, radomes, automobile electric/electronic equipment, or telematics parts.

Abstract: Provided is a polyester resin composition that includes 28 to 50 wt % of a polybutylene terephthalate resin, 20 to 40 wt % of a polyethylene terephthalate resin, 20.5 to 30 wt % of a reinforcing fiber, and 5 to 30 wt % of a layered clay mineral, wherein the polyethylene terephthalate resin comprises one or more selected from among 1,4-cyclohexanedimethanol, isophthalic acid, and butanediol. The polyester resin composition can maintain flatness and minimize deformation even under high temperature environments by maintaining the balance between mechanical properties and heat resistance and thus being suitable for automotive parts, such as parts for electronic control units, the covers thereof, and the cover parts thereof. Also provided are a method of preparing the polyester resin composition, and a molded article manufactured using the polyester resin composition.

Abstract: A thermoplastic resin composition includes a polyester resin (A); a vinyl cyanide compound-conjugated diene compound-aromatic vinyl compound graft copolymer (B); an alpha-methylstyrene-vinyl cyanide compound copolymer (C); a maleimide-based polymer (D); and an amide-based lubricant (E), A method of preparing the thermoplastic resin composition, and a molded article including the thermoplastic resin composition are also described.

Abstract: The present invention relates to a resin molded product having excellent laser transmission stability and hydrolysis resistance, a camera module member including the resin molded product, and an automobile electronic component member including the resin molded product, and provides a resin molded product having a laser transmittance of 80% or more of a 1.5 mm-thick rectangular-specimen gate part measured at a wavelength of 980 nm, a flexural strength retention rate of 50% or more, a bonding strength retention rate of 50% or more, and a laser transmittance standard deviation of 20 or less, a camera module member including the resin molded product, and an automobile electronic component member including the resin molded product.

Abstract: A thermoplastic resin composition for automotive interior materials including 20% to 42% by weight of a polyester resin (A); 20% to 32% by weight of a vinyl cyanide compound-conjugated diene compound-aromatic vinyl compound graft copolymer (B); and 30% to 48% by weight of an aromatic vinyl compound-vinyl cyanide compound copolymer (C), a method of preparing the thermoplastic resin composition, and a molded article including the thermoplastic resin composition. The thermoplastic resin composition has excellent environmental stress cracking (ESC), processability, injection moldability, injection stability, and economics while maintaining mechanical properties, thermal stability, and friction noise resistance equal or superior to those of conventional heat-resistant ABS resin compositions.

Abstract: A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the third region.

Abstract: There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termination region; a level shift transistor disposed between the high voltage region and the low voltage region, at least some portions of the level shift transistor being overlapped with the junction termination region; and/or a high voltage junction capacitor disposed between the high voltage region and the low voltage region, at least some portions of the high voltage junction capacitor being overlapped with the junction termination region.

Abstract: A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the third region.

Abstract: A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the third region.

Abstract: There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termination region; a level shift transistor disposed between the high voltage region and the low voltage region, at least some portions of the level shift transistor being overlapped with the junction termination region; and/or a high voltage junction capacitor disposed between the high voltage region and the low voltage region, at least some portions of the high voltage junction capacitor being overlapped with the junction termination region.

Abstract: There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termination region; a level shift transistor disposed between the high voltage region and the low voltage region, at least some portions of the level shift transistor being overlapped with the junction termination region; and/or a high voltage junction capacitor disposed between the high voltage region and the low voltage region, at least some portions of the high voltage junction capacitor being overlapped with the junction termination region.

Abstract: A power device and a method for manufacturing the same are provided. The power device comprises a first conductive semiconductor substrate; a second conductive buried layer formed to a certain depth within the semiconductor substrate; a second conductive epitaxial layer formed on the conductive buried layer; a first conductive well formed within the conductive epitaxial layer; a second conductive well formed within the second conductive epitaxial layer, on both sides of the first conductive well; a second conductive drift region formed in predetermined portions on the first and the second conductive well; and a lateral double diffused MOS transistor formed in the second conductive drift region. The breakdown voltage of the power device is controlled according to a distance between the first conductive well and the second conductive buried layer.

Abstract: A power semiconductor device has a first region in which a transistor is formed, a third region in which a control element is formed, and a second region for separating the first region and the third region.

Abstract: There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termination region; a level shift transistor disposed between the high voltage region and the low voltage region, at least some portions of the level shift transistor being overlapped with the junction termination region; and/or a high voltage junction capacitor disposed between the high voltage region and the low voltage region, at least some portions of the high voltage junction capacitor being overlapped with the junction termination region.

Abstract: Power devices in which a low on-resistance can be obtained while maintaining a high breakdown voltage and a method for manufacturing the power devices are described.

Abstract: A power device and a method for manufacturing the same are provided. The power device comprises a first conductive semiconductor substrate; a second conductive buried layer formed to a certain depth within the semiconductor substrate; a second conductive epitaxial layer formed on the conductive buried layer; a first conductive well formed within the conductive epitaxial layer; a second conductive well formed within the second conductive epitaxial layer, on both sides of the first conductive well; a second conductive drift region formed in predetermined portions on the first and the second conductive well; and a lateral double diffused MOS transistor formed in the second conductive drift region. The breakdown voltage of the power device is controlled according to a distance between the first conductive well and the second conductive buried layer.

Abstract: Power devices in which a low on-resistance can be obtained while maintaining a high breakdown voltage and a method for manufacturing the power devices are described.

Abstract: A DMOS transistor having high reliability and a fabricating method thereof are described. By the method for fabricating the DMOS transistor, a semiconductor layer of a second conductivity type is formed on a semiconductor substrate of a first conductivity type. A conductive layer is deposited and then the deposited conductive layer is patterned to thereby form a gate electrode and a conductive layer pattern on the semiconductor layer. A body region of the first conductivity type is formed in the semiconductor layer using the conductive layer pattern as a mask. A drain of a second conductivity type is formed in the semiconductor layer, and at the same time a source of the second conductivity type is formed in the body region using the conductive layer pattern as a mask. A highly-doped impurity region for bias is formed in the body region, using the conductive layer pattern as a mask. An interdielectric layer covering the resultant structure is formed.