Abstract: A high-nickel positive electrode active material and a method of making the same is disclosed herein. In some embodiments, the material includes a lithium transition metal oxide, wherein the lithium transition metal oxide is secondary particles, wherein each secondary particle is an aggregate of primary particles, and wherein the oxide has an amount of nickel of 80 atm % or more, a first coating layer formed on a surface of the secondary particle and on surfaces of a portion or all of the primary particles, the first coating layer contains nickel and manganese, and has a layered structure, and a second coating layer formed on an outer surface of the first coating layer, the second coating layer contains boron. The active material has improved stability and initial capacity and crack generation at an interface between primary particles is also suppressed.

Abstract: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.

Abstract: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.

Abstract: Disclosed is a method of removing phosphorus from sewage wastewater by electrocoagulation, comprising: providing an electrode assembly comprising an anode and a cathode with a porous membrane interposed therebetween; placing the electrode assembly in an electrocoagulation tank; passing sewage wastewater through the electrocoagulation tank to treat the sewage wastewater by electrocoagulation; and introducing the treated water into a mixing tank to further treat the water.