Abstract: Provided are a ligand compound of Formula 1 having a novel structure, which shows high catalyst activity and high selectivity to 1-hexene and 1-octene, and may perform ethylene oligomerization with excellent efficiency, an organochromium compound, a catalyst composition comprising the organochromium compound and a method for oligomerizing ethylene using the same, wherein all the variables are as described herein.

Abstract: A coil component according to an aspect of the present disclosure includes a coil component having a body including a first surface and a second surface opposing each other in a first direction, and a third surface and a fourth surface connecting the first surface to the second surface and opposing each other in a second direction; a coil disposed in the body; an external electrode disposed on the body and connected to the coil; and a first heat dissipation portion disposed on the first surface, wherein the body includes a groove disposed in a region between the first heat dissipation portion and the external electrode.

Abstract: Disclosed are an electrochemical hybrid catalyst that has a configuration in which two species of single atomic metals, that is, nickel (Ni) and iron (Fe), each bonded to (coordinated with) nitrogen in a nitrogen-doped carbon nanostructure, are adjacent to each other and are indirectly linked via nitrogen to form a catalyst site or an active site and thus exhibits high carbon monoxide selectivity and current density at a low overpotential during reduction reaction for converting carbon dioxide into carbon monoxide, and a carbon dioxide conversion system using the same.

Abstract: A coil component includes a body having one surface and the other surface, opposing each other, both lateral surfaces respectively connecting the one surface and the other surface and opposing each other, and both end surfaces respectively connecting the both lateral surfaces and opposing each other; a coil unit disposed in the body; a first external electrode and a second external electrode, respectively connected to the coil unit and disposed to be spaced apart from each other on the one surface of the body; and a first insulating layer covering the other surface of the body, the both lateral surfaces of the body, and the both end surfaces of the body.

Abstract: A semiconductor fabricating apparatus may include a collet structure configured to pick-up a semiconductor chip. The collet structure may include a holder, a plate, an absorption member and an edge contact. The holder may be configured to downwardly receive vacuum. The holder may include a magnet arranged in the holder. The plate may include an upper surface magnetically and mechanically combined with the holder. The plate may include a sidewall wholly exposed by the holder. The plate may receive the vacuum from the holder. The absorption member may make contact with the plate to pick-up the semiconductor chip using the vacuum received from the plate. The edge contact may include a protrusion having a first length protruded from an edge portion of a bottom surface of the holder to make contact with the plate.

Abstract: According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1: In Chemical Formula 1, L1 and L2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

Abstract: A thin film deposition method and a method of fabricating an electronic device using the same are disclosed. The thin film deposition method may include preparing a substrate structure having a pattern portion including a hole, adsorbing a reaction inhibitor to inside and outside of the hole in the substrate structure, wherein an adsorption density of the reaction inhibitor may be lower in the inside than the outside, and depositing a metal layer on the inside and outside the hole by an atomic layer deposition (ALD) process, wherein a deposition rate of the depositing may vary depending on regions by the reaction inhibitor, and wherein the reaction inhibitor may include a metal atom and a ligand for reaction inhibition bonded to the metal atom, and the metal atom may remain on the substrate structure in the depositing the metal layer.

Abstract: According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1: In Chemical Formula 1, L1 and L2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

Abstract: A semiconductor fabricating apparatus may include a collet structure configured to pick-up a semiconductor chip. The collet structure may include a holder, a plate, an absorption member and an edge contact. The holder may be configured to downwardly receive vacuum. The holder may include a magnet arranged in the holder. The plate may include an upper surface magnetically and mechanically combined with the holder. The plate may include a sidewall wholly exposed by the holder. The plate may receive the vacuum from the holder. The absorption member may make contact with the plate to pick-up the semiconductor chip using the vacuum received from the plate. The edge contact may include a protrusion having a first length protruded from an edge portion of a bottom surface of the holder to make contact with the plate.