Patents by Inventor Tae Hyeon KIL

Tae Hyeon KIL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film structure for micro-bolometer and method for fabricating the same
    Patent number: 10488263
    Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in monoclinic VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: November 26, 2019
    Assignees: Korea Institute of Science and Technology, UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Seung Hyub Baek, Tae Hyeon Kil, Sanghyeon Kim, Won Jun Choi, Jeong Min Baik, Ki-Suk Lee
  • THIN FILM STRUCTURE FOR MICRO-BOLOMETER AND METHOD FOR FABRICATING THE SAME
    Publication number: 20190316968
    Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in monoclinic VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.
    Type: Application
    Filed: June 25, 2019
    Publication date: October 17, 2019
    Applicants: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Seung Hyub BAEK, Tae Hyeon KIL, Sanghyeon KIM, Won Jun CHOI, Jeong Min BAIK, Ki-Suk LEE
  • Thin film structure for micro-bolometer and method for fabricating the same
    Patent number: 10371571
    Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: August 6, 2019
    Assignees: Korea Institute of Science and Technology, UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Seung Hyub Baek, Tae Hyeon Kil, Sanghyeon Kim, Won Jun Choi, Jeong Min Baik, Ki-Suk Lee
  • THIN FILM STRUCTURE FOR MICRO-BOLOMETER AND METHOD FOR FABRICATING THE SAME
    Publication number: 20180335341
    Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in tetragonal VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.
    Type: Application
    Filed: March 20, 2018
    Publication date: November 22, 2018
    Applicants: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Seung Hyub BAEK, Tae Hyeon KIL, Sanghyeon KIM, Won Jun CHOI, Jeong Min BAIK, Ki-Suk LEE