Abstract: Provided is an output impedance circuit, which has a constant output impedance regardless of a pad voltage, and an output buffer circuit including the output impedance circuit. The output impedance circuit includes an output stage and an impedance control stage. The output stage outputs a current corresponding to a DC bias voltage via an output terminal, and the impedance control stage controls the current flowing through the output stage in response to an output signal. The output stage includes a resistance component and a first MOS transistor. A first terminal of the resistance component is connected to the output terminal. A first terminal of the first MOS transistor is connected to a second terminal of the resistance component, a second terminal of the first MOS transistor is connected to a voltage source, and an input signal is input to a gate of the first MOS transistor.

Abstract: Digital TV system with a PVR function and method for making a stream jump therein, wherein, upon reception of a stream jump order from a user, searching the storage medium for a target GOP the user, or a system designated, changing a reproducing position to a TP next to a TP having a picture header among TPs in a prior picture positioned right forward of the searched target GOP, and starting reproduction from the changed reproducing position, thereby preventing occurrence of a decoding error while maintaining continuity of CC values in decoding TPs of a target GOP, to permit no broking of picture even in the stream jump.

Abstract: A semiconductor device having a sense amplifier driver with a capacitor affected by off current is provided. The sense amplifier driver, which receives a clock signal and generates a sense amplifier enable signal by buffering the clock signal, includes a plurality of inverters connected in series and at least one capacitor. A PMOS transistor of at least a first inverter of the plurality of inverters is connected between a dummy bit line, in which voltage drop by the off current is generated, and the output terminal of the first inverter and the at least one capacitor is connected between the dummy bit line and the output terminal of a second inverter which inverts an output signal of the first inverter. Therefore, the capacitance of the at least one capacitor is determined by voltage of the dummy bit line. Therefore, since the voltage drop of the dummy bit line is larger when the magnitude of the off current is larger, the capacitance of the at least one capacitor is larger.

Abstract: Disclosed is a VDSL (very high bit-rate digital subscriber line) system on the DMT line coding method basis and a method for determining a length of cyclic prefix samples using the system. The VDSL system comprises a transmitter data including cyclic prefix samples through a channel; a receiver for receiving the data including the cyclic prefix samples; a controller for controlling the transmitter and the receiver to control an initialization operation including handshake, training, channel analysis, and exchange, and a data transmission operation after the initialization operation; and a cyclic prefix sample length estimator for estimating an optimized length of the cyclic prefix sample on the basis of the correlation between the cyclic prefix sample and other data.

Abstract: A semiconductor memory device, that reduces load capacitance of write-only bit lines, may include: a first bit cell array block, in which bit cells thereof are defined by intersections of first bit lines and first word lines, the first bit lines being arranged as pairs of first signal lines and second signal lines, respectively; a second bit cell array block, in which bit cells thereof are defined by intersections of second bit lines and second word lines, the second bit lines being arranged as pairs of third signal lines and the second signal lines; respectively; a block division circuit operable to generate and output block division control signals; and a write bit line divider circuit operable to either open-circuit or connect together the first signal lines and the third signal lines, respectively, according to the block division control signals.

Abstract: A semiconductor device includes an output impedance control circuit, connected to a ZQ pad and an output buffer circuit, for controlling an impedance of the output buffer circuit according to an impedance of an external resistor connected with the ZQ pad.

Abstract: A synchronous mirror delay circuit comprises a delay monitor circuit for delaying a reference clock signal from a clock buffer circuit. A forward delay array sequentially delays an output clock signal of the delay monitor circuit to generate delay clock signals, and the mirror control circuit detects a delay clock signal synchronized with the reference clock signal among the delay clock signals. A backward delay array delays a clock signal delayed by the mirror control circuit, and a clock driver receives an output clock signal of the backward delay array to generate the internal clock signal. A locking range control circuit controls a delay time of each clock signal transferred to the delay monitor circuit by the amount of a delay time of each signal transferred to the clock driver when none of delay clock signals of the forward delay array is synchronized with the reference clock signal.

Abstract: There is provided an integrated circuit which performs data input/output operations through a transmission line with a predetermined impedance. The integrated circuit includes a driver having a plurality of driving units, in which the driving units input/output data from/to the transmission line, and a controller for inputting an output data signal and applying a plurality of control signals to the driver, in which the control signals are generated in response to an output activation signal and impedance code signals related to states of the impedance. At least one driving unit is driven in response to the control signals, and the driver includes an on-chip termination circuit connected to an input buffer.

Abstract: An impedance controller includes a current mirror section to generate an impedance current. At least one detector includes a transistor array and an impedance corresponding to the impedance current, the at least one detector operating responsive to a code generator. And an at least one code generator generates a first code to adjust a gate voltage of the transistor array by comparing an output of the at least one detector to a reference voltage and generates a second code to adjust a size of the transistor array by comparing the output from the at least one detector to the reference voltage.

Abstract: A structure and method of connecting a plurality of PSC-I beams (PSC-I beams) to each other using steel brackets.

Abstract: A word line driver includes multiple current paths for driving a word line of a memory device to a negative voltage and a positive voltage. When driving the word line from the negative voltage to the positive voltage, the word line driver uses a first current path to drive the word line to the positive voltage in one stage. When driving the word line from the positive voltage to the negative voltage, the word line driver drives the word line from the positive voltage to ground using the first current path in a first stage. In a second stage, the word driver further drives the word line from ground to the negative voltage in using a second current path.

Abstract: A semiconductor device having a sense amplifier driver with a capacitor affected by off current is provided. The sense amplifier driver, which receives a clock signal and generates a sense amplifier enable signal by buffering the clock signal, includes a plurality of inverters connected in series and at least one capacitor. A PMOS transistor of at least a first inverter of the plurality of inverters is connected between a dummy bit line, in which voltage drop by the off current is generated, and the output terminal of the first inverter and the at least one capacitor is connected between the dummy bit line and the output terminal of a second inverter which inverts an output signal of the first inverter. Therefore, the capacitance of the at least one capacitor is determined by voltage of the dummy bit line. Therefore, since the voltage drop of the dummy bit line is larger when the magnitude of the off current is larger, the capacitance of the at least one capacitor is larger.

Abstract: The present invention includes a dual port static memory cell and a semiconductor memory device having the same, the dual port static memory cell comprising a first transmission gate having a gate connected to a word line and connected between a bit line and a first node, a second transmission gate having a gate connected to the word line and connected between a complementary bit line and a second node, a latch connected between the first node and the second node, and a PMOS transistor having a gate connected to a scan control line and connected between the second node and a scan bit line.

Abstract: An output impedance control circuit of a semiconductor device. A first transistor is connected to a pad and a level controller controls a gate voltage of the first transistor in response to a voltage of the pad and a reference voltage. A MOS array is connected between the pad and a power supply voltage and supplies current to the pad in response to an impedance control code. A first control circuit generates the impedance control code in response to whether a voltage of the pad is converging to the reference voltage. A second control circuit controls a pull-up impedance of the output buffer circuit in response to the first impedance control code when a voltage of the pad is converging to the reference voltage.

Abstract: Disclosed is a heat dissipator for an optical writing and/or reproducing apparatus. The heat dissipator comprises a main base having mounted thereto a plurality of parts including at least one motor for optical writing and/or reproduction; a circuit board positioned below the main base and having installed thereon elements for controlling the parts; a heat generating element formed with a plurality of leads which are connected to a circuit pattern of the circuit board; a heat conduction member brought into contact with at least the leads, for receiving heat generated in the heat generating element; and a cabinet brought into contact with the heat conduction member and formed with an element accommodating section and/or a pair of protrusions which are shaped to be functionally associated with an outer surface of the heat generating element to ensure that the heat dissipating member is brought into close contact with the leads of the heat generating element.

Abstract: A semiconductor memory device, that reduces load capacitance of write-only bit lines, may include: a first bit cell array block, in which bit cells thereof are defined by intersections of first bit lines and first word lines, the first bit lines being arranged as pairs of first signal lines and second signal lines, respectively; a second bit cell array block, in which bit cells thereof are defined by intersections of second bit lines and second word lines, the second bit lines being arranged as pairs of third signal lines and the second signal lines; respectively; a block division circuit operable to generate and output block division control signals; and a write bit line divider circuit operable to either open-circuit or connect together the first signal lines and the third signal lines, respectively, according to the block division control signals.

Abstract: A negative word line driver employs devices to maintain the potential difference between the active word line signal and the inactive word line signal while reducing the need for a significant negative voltage supply. One form of the negative word line driver employs an isolation element to couple the word line to ground when the inputs to the word line driver indicate the word line should not be active, while the word line is also coupled to the negative voltage supply. Another form of the form of the negative word line driver receives as inputs the voltages to be driven on the word line and can be implemented with fewer transistors but still allows the word line to be driven at a negative voltage with a reduced negative voltage supply.

Abstract: A word line driver includes multiple current paths for driving a word line of a memory device to a negative voltage and a positive voltage. When driving the word line from the negative voltage to the positive voltage, the word line driver uses a first current path to drive the word line to the positive voltage in one stage. When driving the word line from the positive voltage to the negative voltage, the word line driver drives the word line from the positive voltage to ground using the first current path in a first stage. In a second stage, the word driver further drives the word line from ground to the negative voltage in using a second current path.

Abstract: A negative word line driver employs devices to maintain the potential difference between the active word line signal and the inactive word line signal while reducing the need for a significant negative voltage supply. One form of the negative word line driver employs an isolation element to couple the word line to ground when the inputs to the word line driver indicate the word line should not be active, while the word line is also coupled to the negative voltage supply. Another form of the form of the negative word line driver receives as inputs the voltages to be driven on the word line and can be implemented with fewer transistors but still allows the word line to be driven at a negative voltage with a reduced negative voltage supply.

Abstract: There is provided an integrated circuit which performs data input/output operations through a transmission line with a predetermined impedance. The integrated circuit includes a driver having a plurality of driving units, in which the driving units input/output data from/to the transmission line, and a controller for inputting an output data signal and applying a plurality of control signals to the driver, in which the control signals are generated in response to an output activation signal and impedance code signals related to states of the impedance. At least one driving unit is driven in response to the control signals, and the driver includes an on-chip termination circuit connected to an input buffer.