Patents by Inventor Tae Hyuk IM

Tae Hyuk IM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190281226
    Abstract: An image sensor includes a pixel array that includes a first pixel group and a second pixel group, each including a plurality of image pixels to generate image data. The first pixel group includes a first phase detection pixel pair including first phase detection pixels arranged adjacent to each other in a first direction and having at least one first microlens thereon, and the second pixel group includes a second phase detection pixel pair including second phase detection pixels arranged adjacent to each other in a second direction different from the first direction and having at least one second microlens thereon. The sensitivity of the first phase detection pixels is different from the sensitivity of the second phase detection pixels.
    Type: Application
    Filed: March 5, 2019
    Publication date: September 12, 2019
    Inventors: Tae-shick Wang, Chae-sung Kim, Sung-jin Park, Joon-hyuk Im
  • Patent number: 9991424
    Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: June 5, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
  • Patent number: 9653018
    Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: May 16, 2017
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Chang Yeon Kim, Tae Hyuk Im, Young Wug Kim
  • Publication number: 20170069799
    Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 9, 2017
    Inventors: Tae Hyuk IM, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
  • Patent number: 9508909
    Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: November 29, 2016
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
  • Publication number: 20160111613
    Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 21, 2016
    Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
  • Patent number: 9306120
    Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: April 5, 2016
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Da Hye Kim, Jong Kyun You, Chang Yeon Kim, Tae Hyuk Im
  • Patent number: 9236533
    Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: January 12, 2016
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
  • Patent number: 9202968
    Abstract: Provided is a method of fabricating a vertical light emitting diode (LED). Initially, a semiconductor structure layer including an active layer is formed on a front surface of a growth substrate. A conductive support substrate is formed on the semiconductor structure layer. A rear surface of the growth substrate is abraded to reduce the thickness of the growth substrate. The rear surface of the growth substrate whose thickness is reduced due to the abrasion is dry etched to remove the growth substrate.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: December 1, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Chang Yeon Kim, Tae Kyoon Kim, Tae Hyuk Im
  • Publication number: 20150317930
    Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.
    Type: Application
    Filed: May 18, 2015
    Publication date: November 5, 2015
    Inventors: Chang Yeon Kim, Tae Hyuk Im, Young Wug Kim
  • Patent number: 9159870
    Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: October 13, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jong Kyun You, Chang Yeon Kim, Da Hye Kim, Tae Hyuk Im, Tae Gyun Kim, Young Wug Kim
  • Patent number: 9018027
    Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: April 28, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Tae Hyuk Im, Chang Yeon Kim, Young Wug Kim
  • Publication number: 20140367722
    Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
    Type: Application
    Filed: December 21, 2012
    Publication date: December 18, 2014
    Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
  • Publication number: 20140138729
    Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 22, 2014
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Da Hye KIM, Jong Kyun You, Chang Yeon Kim, Tae Hyuk Im
  • Publication number: 20140073120
    Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.
    Type: Application
    Filed: September 11, 2013
    Publication date: March 13, 2014
    Applicant: SEOUL OPTO DEVICE CO., LTD.
    Inventors: Jong Kyun YOU, Chang Yeon Kim, Da Hye Kim, Tae Hyuk Im, Tae Gyun Kim, Young Wug Kim
  • Publication number: 20140030837
    Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.
    Type: Application
    Filed: July 25, 2013
    Publication date: January 30, 2014
    Applicant: Seoul Opto Device Co., Ltd.
    Inventors: Tae Hyuk IM, Chang Yeon Kim, Young Wug Kim