Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

Abstract: The present invention provides an anticancer agent comprising a multi-walled carbon nanotube and an anticancer drug covalently attached to the surface of the multi-walled carbon nanotube, in order to anticancer agent capable of solving drug resistance problem.

Abstract: The present invention provides an anticancer agent comprising a multi-walled carbon nanotube and an anticancer drug covalently attached to the surface of the multi-walled carbon nanotube, in order to anticancer agent capable of solving drug resistance problem.

Abstract: A battery mounted semiconductor device is provided. A battery mounted semiconductor device comprises a semiconductor silicon wafer, an electric power supply formed on a backside of the semiconductor silicon wafer and a circuit pattern formed on a front side of the semiconductor silicon wafer.

Abstract: A battery mounted semiconductor device is provided. A battery mounted semiconductor device comprises a semiconductor silicon wafer, an electric power supply formed on a backside of the semiconductor silicon wafer and a circuit pattern formed on a front side of the semiconductor silicon wafer.

Abstract: Disclosed is a semiconductor silicon wafer having an electric power supply affixed to the backside of the wafer. By fabricating the electric power supply onto the backside of the wafer that has been left unused, the semiconductor chip can have a self-supplied power, realizing the self-powered semiconductor chip with an increased efficiency. Further, since the electric power supply is installed on the wafer, not the semiconductor chip, the fabrication procedure becomes very simple, and the battery can be mounted on any type of chip.

Abstract: The present invention relates to the wire type battery for wireless charging which is constructed by adding the coil for wireless charging to the wire type battery, by which the present invention can provide the wire type battery for wireless charging to easily carry out charging compared to the existing wire charging method and can solve the problem in the charging which is expected from the shape of the battery to improve the effect of charging.

Abstract: The present invention relates to a superelastic alloy-Ni sulfide element for a combined current collector-electrode in which Ti—Ni based alloy is used as a current collector and Ni sulfide is used as electrode material, the Ni sulfide being formed on the Ti—Ni based alloy by forming a Ni thin film on a surface of the Ti—Ni based alloy and sulfurdizing the Ti—Ni based alloy comprising the Ni thin film. Thus, a superelastic characteristic of the element is realized as well as small-size integration of a battery is possible.

Abstract: The present invention relates to Ti—Ni based functionally graded alloys easy in proportional control, which are made by cold working and annealing Ti—Ni based alloys under a predetermined temperature gradient. The thus processed Ti—Ni based functionally graded alloys have a shape memory effect and an ultra elasticity and at the same time, have a consecutive variation of shape depending on a temperature variation.

Abstract: Disclosed is a semiconductor silicon wafer having an electric power supply affixed to the backside of the wafer. By fabricating the electric power supply onto the backside of the wafer that has been left unused, the semiconductor chip can have a self-supplied power, realizing the self-powered semiconductor chip with an increased efficiency. Further, since the electric power supply is installed on the wafer, not the semiconductor chip, the fabrication procedure becomes very simple, and the battery can be mounted on any type of chip.

Abstract: The present invention relates to a hybrid superelastic metal-metal sulfide materials for current collector and anode of battery, which use two phase alloy of Ti—Ni or three phase alloy of Ti—Ni—X as current collector, and produce a Ti, Ni sulfide at a surface of current collector with an inside sulfide method to allow to use as an active materials of positive electrode, and perform a role of current collector and anode of battery with one material by endowing all materials with superelastic characteristic, and it have an excellent effect providing a hybrid superelastic metal-metal sulfide materials for current collector and anode having thin plate and fine wire shape.

Abstract: The present invention relates to a thread-type flexible battery, more precisely a thread-type flexible battery that can be transformed into various forms in necessary and easily connected to an instrument from outside thereof by having a shape of a thread, which is constructed by forming an inside electrode by coating electrode material at periphery side of inside current collector, and coating electrolyte at the outside of said inside electrode, and forming an outside electrode by coating electrode material at periphery side of said electrolyte, and then depositing an outside electrolyte and a protecting coating part enabling to protect the periphery side of said outside electrolyte from a moisture and an air.

Abstract: A communications terminal comprising means operable, in the absence of significant input to the terminal, to automatically terminate a call.

Abstract: The Ti—Ni—Mo shape memory alloy and fixating device for bone fractures using the same are provided, in which a very small amount of Mo of 0.5 at % or 0.7 at % is added Ni for to a Ti—Ni alloy, in order to maintain a transformation temperature whose martensite transformation start temperature (Rs) is 4-35° C. and whose inverse transformation finish temperature (Af) is 6-37° C. to be consistent, so that the transformation temperature can be applied to the human body most ideally, and enhance a corrosion resistivity. The Ti—Ni—Mo shape memory alloy is preferably made of Ti of 48-52 at %, Ni of 48-52 at % and Mo of 0.1-2.0 at %, in a composition ratio.

Abstract: A communications terminal comprising means operable, in the absence of significant input to the terminal, to automatically terminate a call.