Abstract: An electrophoretic display device according to an exemplary embodiment of the present invention includes: a lower substrate; an upper substrate; a thin film transistor disposed on the lower substrate; a pixel electrode connected to the thin film transistor; an electronic ink layer positioned between the lower substrate and the upper substrate; a plurality of partitions disposed on the upper substrate; a reflecting layer disposed on the partitions; a color filter disposed between the partitions.

Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

Abstract: An electro-wetting display device includes a polar fluid layer, a pixel electrode, a non-polar black fluid layer, a driving electrode, and a color fluid layer. The non-polar black fluid is deformed by a voltage difference between a voltage applied to the pixel electrode and a voltage applied to the polar fluid layer. the non-polar color fluid is deformed by a voltage difference between a voltage applied to the driving electrode and a voltage applied to the polar fluid layer. The driving electrode receives a voltage having a voltage level varied according to a display mode.

Abstract: A flat panel display device displays an image using a micro-shutter electrode and a diffusive reflection layer. The display device has a wide viewing angle and reduces a loss of light to thus improve light efficiency. In addition, gray levels can be determined by an electrostatic force between the pixel electrode and the micro-shutter electrode. An opening/closing operation of the micro-shutter electrode is fast so that the response speed can be improved.

Abstract: An electrophoretic display according to an exemplary embodiment of the present invention may include: a first substrate, a first electrode formed on the first substrate, a second electrode spaced apart from the first electrode, a second substrate facing the first substrate, and a plurality of charged particles arranged between the first substrate and the second substrate, pairs of the charged particles having different polarities. Each charged particle has at least two threshold voltages, where the threshold voltages are voltage magnitudes below which a voltage applied across the first and second electrodes does not move the associated charged particle. The pixels may represent any one of colors such as red, green, blue, white, and black by including two charged particles of different colors in one pixel and changing the attractive and repulsive force threshold voltages of each of two charged particles of different colors contained in the pixel.

Abstract: A method of compensating performance of a thin film transistor including a gate electrode, source and drain electrodes that are spaced apart from each other and insulated from the gate electrode, and an active layer to form a channel between the source and drain electrodes, includes applying a negative voltage to the gate electrode to compensate deterioration of the active layer.

Abstract: A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiO2 and BaSO4.

Abstract: Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si—H to Si—H2 has a value equal to or less than 4 to 1, may be formed on the substrate using chemical vapor deposition equipment.

Abstract: A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.

Abstract: A display device includes a flexible panel and a cover member. The flexible panel includes a first substrate and a second substrate. The first substrate includes a first support layer in which an organic insulation layer and an inorganic insulation layer are stacked thereon, and a thin-film transistor and a pixel electrode disposed on the first support layer. The second substrate is opposite to the first substrate. The second substrate includes an organic insulation layer and a second support layer on which the inorganic insulation layer is deposited. The cover member covers an outer surface of the flexible panel. Thus, a display device is manufactured by using a support layer on which an organic insulation layer and an inorganic insulation layer are coated as a base substrate, so that defects generated in a manufacturing process may be prevented.

Abstract: A display substrate includes a gate line disposed on a substrate, a data line crossing the gate line, a thin-film transistor electrically connected to the gate line and the data line, a light blocking layer disposed on the substrate and the thin-film transistor, where the light blocking layer blocks light and includes at least one selected from the group consisting of a zinc oxide, a copper oxide and a zinc-copper-oxide composite, and a pixel electrode electrically connected to the thin-film transistor.

Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

Abstract: A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V.

Abstract: A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

Abstract: Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.

Abstract: The present invention relates to a display substrate in which sound devices serving as speakers or a microphones are built, and the display substrate includes a substrate including a sound processing area and a display area, a plurality of sound devices arranged in the sound processing area, and a plurality of pixels arranged in the display area. The sound devices may be formed on the substrate together with the pixels using a same manufacturing process as that used to form the pixels.

Abstract: Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si—H to Si—H2 has a value equal to or less than 4 to 1, may be formed on the substrate using chemical vapor deposition equipment.

Abstract: A display substrate includes a base substrate having a plurality of pixel areas, a switching device arranged in each pixel area to switch a pixel voltage, a pixel electrode arranged in each pixel area and electrically connected to the switching device to receive the pixel voltage, and a shielding member positioned between two adjacent pixel areas.

Abstract: A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate.

Abstract: A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.