Abstract: Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

Abstract: Disclosed are a novel organic compound, and an organic electroluminescent element having improved characteristics, such as luminous efficiency, driving voltage, and lifespan, by containing the novel organic compound in one or more organic material layers.

Abstract: Provided are a three-dimensional (3D) semiconductor integrated circuit and a static random access memory (SRAM) device. The three-dimensional (3D) semiconductor integrated circuit includes: a first die including a power supply circuit a second die including an SRAM with a through-silicon-via (TSV) bundle region; a third die including a processor; and TSVs, each of which is provided on the TSV bundle region and extends from the TSV bundle region to the third die. The SRAM device includes: a bank array with banks, each of which includes sub-bit-cell arrays and a local peripheral circuit region arranged in a cross (+) shape between the sub-bit-cell arrays; and a global peripheral circuit region including a tail peripheral circuit region extending in a first direction and a head peripheral circuit region extending in a second direction, the tail peripheral circuit region and the head peripheral circuit region being arranged in a “T” shape.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer, and an external electrode disposed on the body. The dielectric layer includes a BaTiO3-based base material main ingredient, a sub-ingredient including Dy, and an additive. The additive is one or more of Sm, Gd and Tb, and a content of the additive is 25 mol or more and less than 50 mol relative to 100 mol of Dy. The dielectric layer includes a plurality of dielectric grains. When an average grain size of the plurality of dielectric grains is represented by G, and an average thickness of the dielectric layer is represented by td, 1.75?td/G?2.23 is satisfied.

Abstract: According to at least one embodiment, a method of performing intraoral scanning includes: positioning a first scan body at a location of a first implant; positioning a second scan body at a location of a second implant; coupling a first clip to the first scan body; and coupling a second clip to the second scan body. The coupled first clip extends from the positioned first scan body towards the location of the second implant, and the coupled second clip extends from the positioned second scan body towards the location of the first implant.

Abstract: A quantum dot display device includes a substrate, a quantum dot diode disposed on the substrate and including a first electrode, a second electrode, and a quantum dot layer between the first electrode and the second electrode, and an encapsulation film disposed on a surface of the quantum dot diode, wherein a water vapor transmission rate of the encapsulation film is about 0.001 to about 1 gram per square meter per day at 1 atmosphere of pressure.

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: The present invention relates to a scanning system, and more particularly, to a scanning system capable of scanning a bevel region of a wafer subjected to a standard sampling treatment and quickly cleaning a bevel nozzle used in a scanning step. For this purpose, the scanning system of the present invention includes a bevel scanning nozzle unit that has a nozzle groove, through which a bevel portion of a wafer enters and exits, at a lower end side of a bevel nozzle and that scans a bevel region of the wafer with a predetermined volume of a scanning solution; a wafer mounting unit that mounts the wafer thereon and rotates the wafer at a predetermined speed; and a nozzle cleaning unit that has a cleaning chamber filled with a cleaning solution and having a cleaning solution overflow portion and that immerses and cleans the bevel scanning nozzle unit.

Abstract: A ceramic electronic component includes a body, including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. At least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy). In the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30.

Abstract: The present invention relates to a carbon composite material and a method for producing the same, and more particularly, to a carbon composite material capable of improving electrostatic dispersibility and flame retardancy, and a method for producing the same. The carbon composite material according to the present invention can be effectively applied to products requiring conductivity and flame retardancy.

Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

Abstract: The present invention relates to a composition for preparing a microneedle, a soluble microneedle, and a microneedle percutaneous patch comprising the soluble microneedle. A soluble microneedle contained in a microneedle percutaneous patch of the present invention has a high drug loading capacity and excellent strength and thus may contain an effective amount of donepezil or a pharmaceutically acceptable salt thereof even with a small area of the microneedle. Accordingly, the present invention is economical and produces a lower level of skin irritation.

Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

Abstract: Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.

Abstract: A light emitting element includes a first electrode, a second electrode, and a light emission layer interposed between the first electrode and the second electrode, where an emission efficiency of the light emission layer varies based on a voltage applied to at least one selected from the first electrode and the second electrode.

Abstract: Methods, systems, devices and apparatuses for generating a high-quality MRI image from under-sampled or corrupted data The image reconstruction system includes a memory. The memory is configured to store multiple samples of biological, physiological, neurological or anatomical data that has missing or corrupted k-space data and a deep learning model or neural network. The image reconstruction system includes a processor coupled to the memory. The processor is configured to obtain the multiple samples. The processor is configured to determine the missing or corrupted k-space data using the multiple samples and the deep learning model or neural network. The processor is configured to reconstruct an MRI image using the determined missing or corrupted k-space data and the multiple samples.

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.