Abstract: A plasma processing apparatus such as a plasma etching apparatus, which is not subject to arcing to the gas distributor plate which is caused by secondary potentials generated by polymers adhering to a gas distribution plate. The gas distribution plate is electrically isolated from the ground electric potential, and does not have any polarity. The gas distribution plate may be formed of an insulating material. Furthermore, a support plate may be adapted to fix the gas distribution plate to a chamber of the apparatus in such a manner that the gas distribution plate is detachably coupled with the support plate. Thereby, it is easier to separate the gas distribution plate from the apparatus to remove the accumulated polymers during the plasma process.

Abstract: A pedestal for a semiconductor device etching system includes a pedestal body having a circumferential recess. The recess includes a cutaway area extending radially inwardly therefrom. The pedestal further includes a sealing ring configured to mate with the pedestal body recess. The sealing ring includes a radially inwardly-extending projection that resides within the cutaway area of the recess. Because the sealing ring projection fits within and is retained by the cutaway area of the recess, the sealing ring remains in place upon removal of the mounted wafer even if it adheres somewhat to the wafer.