Abstract: Provided is a mold flux used for casing a cast slab, the mold flux including, bases on a total wt % of thereof, 32-38 wt % of aluminum oxide (Al2O3), 8-12 wt % of strontium oxide (SrO), 8-12 wt % of potassium oxide (K2O), 8-12 wt % of fluorine (F), 5-8 wt % of boron oxide (B2O3), 3-5 wt % of lithium oxide (Li2O), and inevitable impurities. Thus, according to the mold flux, a change in components due to silicon oxide (SiO2) and calcium oxide (CaO) may be suppressed or prevented compared to those in the conventional art.

Abstract: Provided is a mold flux used for casing a cast slab, the mold flux including, bases on a total wt % of thereof, 32-38 wt % of aluminum oxide (Al2O3), 8-12 wt % of strontium oxide (SrO), 8-12 wt % of potassium oxide (K2O), 8-12 wt % of fluorine (F), 5-8 wt % of boron oxide (B2O3), 3-5 wt % of lithium oxide (Li2O), and inevitable impurities. Thus, according to the mold flux, a change in components due to silicon oxide (SiO2) and calcium oxide (CaO) may be suppressed or prevented compared to those in the conventional art.

Abstract: Provided is a molten material treatment apparatus including: a container having an upper portion, on which a molten material injection part is disposed, and a bottom part in which a hole is formed; a gas injection part attached to the bottom part between the molten material injection part and the hole; a chamber part formed on the upper portion of the container so as to face the gas injection part and having an inside open downward; and a plurality of vertical members disposed so as to cross a plurality of positions of a rotary flow region formed between the chamber part and the bottom part, wherein an inclusion removal efficiency can be improved while maintaining the molten material surface by a method in which a plurality of mutually different rotary flows are generated in a plurality of sections within the rotary flow region and are partially overlapped.

Abstract: Provided is a molten material treatment apparatus including: a container having an upper portion, on which a molten material injection part is disposed, and a bottom part in which a hole is formed; a gas injection part attached to the bottom part between the molten material injection part and the hole; a chamber part formed on the upper portion of the container so as to face the gas injection part and having an inside open downward; and a plurality of vertical members disposed so as to cross a plurality of positions of a rotary flow region formed between the chamber part and the bottom part, wherein an inclusion removal efficiency can be improved while maintaining the molten material surface by a method in which a plurality of mutually different rotary flows are generated in a plurality of sections within the rotary flow region and are partially overlapped.

Abstract: An antenna for vehicles includes a first AGC unit and a second AGC unit. The first AGC unit determines the strength of a signal, which is input to the input stage of an amplifier without passing through a transistor. Depending on the determination result, the first AGC unit attenuates the signal and output the attenuated signal to the transistor. When a signal having a value equal to or greater than a reference value is input to the input stage, the second AGC unit operates so as to output the signal without passing through the transistor. According to the antenna, both signals in a strong electric field area and signals in a weak electric field area close to the strong electric field area can be effectively controlled.

Abstract: An antenna for vehicles includes a first AGC unit and a second AGC unit. The first AGC unit determines the strength of a signal, which is input to the input stage of an amplifier without passing through a transistor. Depending on the determination result, the first AGC unit attenuates the signal and output the attenuated signal to the transistor. When a signal having a value equal to or greater than a reference value is input to the input stage, the second AGC unit operates so as to output the signal without passing through the transistor. According to the antenna, both signals in a strong electric field area and signals in a weak electric field area close to the strong electric field area can be effectively controlled.