Abstract: A vertical GaN-based LED includes: an n-type bonding pad; an n-electrode formed under the n-type bonding pad; an n-type transparent electrode formed under the n-electrode; an n-type GaN layer formed under the n-type transparent electrode; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a current blocking layer formed under a predetermined portion of the p-type GaN layer corresponding to a region where the n-electrode is formed, the current blocking layer being formed of distributed Bragg reflector (DBR); a p-electrode formed under the resulting structure where the current blocking layer is formed; and a support layer formed under the p-electrode.

Abstract: A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.

Abstract: A vertical GaN-based LED is provided. The vertical GaN-based LED includes an n-type bonding pad, an n-type reflective electrode formed under the n-type bonding pad, an n-type transparent electrode formed under the n-type reflective electrode, an n-type GaN layer formed under the n-type transparent electrode, an active layer formed under the n-type GaN layer, a p-type GaN layer formed under the active layer, a p-electrode formed under the p-type GaN layer and having an uneven profile at a surface which does not come in contact with the p-type GaN layer, a p-type reflective electrode formed along the uneven surface of the p-type electrode, and a support layer formed under the p-type reflective electrode.

Abstract: The present invention relates to a polarizing liquid crystal film having no alignment layer and a method for manufacturing the same, a light guide plate integrated with the polarizing liquid crystal film, and a backlight unit. The polarizing liquid crystal film of the present invention includes an adhesive layer, a liquid crystal layer aligned on one side of the adhesive layer, and a protection film arranged on an opposite side of the adhesive layer to protect the liquid crystal layer. Further, the method for manufacturing a polarizing liquid crystal film includes preparing a liquid crystal alignment film, aligning liquid crystal on the liquid crystal alignment film, providing an adhesive layer on the liquid crystal, attaching a protection film protecting the liquid crystal on the adhesive layer, and exfoliating the liquid crystal alignment film. Furthermore, there is provided a light guide plate integrated with the polarizing liquid crystal film and a backlight unit including the same.

Abstract: The present disclosure relates to a liquid crystal display (LCD). There is provided an LCD comprising at least one lamp, a light guide plate for converting light incident from the lamp into a surface light source, an LCD panel disposed above the light guide plate for displaying an image thereon, a first reflection plate disposed below the light guide plate and including an end bent to extend parallel to a surface of the light guide plate such that the reflection plate can surround the lamp installed on the surface of the light guide plate, a mold frame including a space for accommodating the lamp, the light guide plate, the LCD panel and the reflection palate therein and including a portion of a sidewall protruding into the LCD to surround the top of the lamp, and a second reflection plate disposed on a rear surface of a portion of the mold frame arranged above the lamp. Therefore, a thin and lightweight LCD can be obtained and lamp efficiency can also be improved.

Abstract: The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a transparent electrode that is formed on the p-type nitride semiconductor layer; a p-type bonding electrode that is formed to be connected on the transparent electrode; and an n-type electrode that is formed of a compound containing aluminum or silver and is formed on the n-type nitride semiconductor layer.

Abstract: The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating structure including one end of the ridge, and made of a metal having a high reflectivity in a first wavelength range of at least a predetermined wavelength. A second metal layer is formed on the first metal layer, the second metal layer being made of a metal having a high reflectivity in a second wavelength range under the predetermined wavelength. The multi-wavelength laser diode can improve-the reflective layer structure to achieve a high reflectivity in the entire visible light range.