Abstract: Disclosed herein are a method, an apparatus, and a storage medium for image encoding/decoding. An intra-prediction mode for the target block is derived, and intra-prediction for the target block that uses the derived intra-prediction mode is performed. The intra-prediction mode for the target block is derived using an artificial neural network, and an MPM list for the target block is derived using information about the target block, pieces of information about blocks adjacent to the target block, and the artificial neural network. The artificial neural network outputs one or more available intra-prediction modes. Further, the artificial neural network outputs match probabilities for one or more candidate intra-prediction modes, and each of the match probabilities for the candidate intra-prediction modes indicates a probability that the corresponding candidate intra-prediction mode matches the intra-prediction mode for the target block.

Abstract: A compound represented by Chemical Formula 1 is provided. The compound has a reorganization energy of less than about 0.191 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 500 nm. In Chemical Formula 1, the definition of each group is as described in the specification.

Abstract: A compound is represented by Chemical Formula 1, and at least one of X1 and X2 is a substituent having a volume ranging from about 900 bohr3 to about 3000 bohr3 (V/molecule), and a photoelectric device, an image sensor, and an electronic device includes the compound: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Provided is a compound represented by any one of Chemical Formulas 1 to 3, and having a molecular packing density of greater than or equal to about 1.55 molecules/nm3 and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same. In Chemical Formulas 1 to 3, the definition of each substituent is as described in the specification.

Abstract: Provided is a compound represented by Chemical Formula 1 and having a reorganization energy of the compound of less than about 0.163 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 495 nm, and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same. In Chemical Formula 1, the definition of each substituent is as described in the specification.

Abstract: Provided are a compound represented by Chemical Formula 1A or 1B and a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device including the same. Details for Chemical Formulas 1A and 1B are as described in the detailed description.

Abstract: Provided are a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device. The photoelectric device includes a first electrode and a second electrode facing each other, and a light absorbing layer between the first electrode and the second electrode, wherein the light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or any combination thereof, the light absorbing layer includes a p-type semiconductor and an n-type semiconductor, and the n-type semiconductor includes a compound represented by Chemical Formula 1. Details for Chemical Formula 1 are as described in the detailed description.

Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor on the substrate and including a photosensitive layer extending at least partially in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include separate, respective portions of each of first and second common auxiliary layers each extending continuously as a single piece of material under and on, respectively, each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a light absorbing semiconductor having a HOMO energy level having a difference of less than about 1.0 eV from a HOMO energy level of the first common auxiliary layer and a LUMO energy level having a difference of less than about 1.0 eV from a LUMO energy level of the second common auxiliary layer.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.

Abstract: Disclosed are a compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel, and an electronic device. In Chemical Formula 1, X1, A, and R1 to R5 are as described in the specification.

Abstract: Provided is an operating method of a memory system including a plurality of logical address groups each having a preset logical address range. The operation method may include: selecting a victim block; selecting a plurality of target blocks among empty blocks; mapping at least one logical address group of the logical address groups to each of the target blocks; determining a first logical address group including a logical address of first valid data stored in the victim block, among the logical address groups; and backing up the first valid data into a first target block mapped to the first logical address group among the target blocks.

Abstract: The present disclosure relates to a novel compound, and an organic electroluminescent device including the same, and by using the compound according to the present disclosure in an organic material layer, preferably a light emitting layer or an auxiliary light emitting layer, of an organic electroluminescent device, light emission efficiency, a driving voltage, a lifetime and the like of the organic electroluminescent device may be enhanced.

Abstract: The present disclosure relates to a novel organic compound and an organic electroluminescent device comprising the same, and the organic compound of the present disclosure may be used for an organic material layer of the organic electroluminescent device, thereby improving the light emitting efficiency, driving voltage, lifetime, and the like of the organic electroluminescent device.

Abstract: The present invention relate to a novel organic compound and an organic electroluminescent device including the same, and in particular, to a novel dibenzofuran-based compound having excellent thermal stability, carrier transport ability, light emitting ability and the like, and an organic electroluminescent device having low driving voltage, and enhanced luminous efficiency, lifetime properties and the like by including the novel dibenzofuran-based compound as a material of one or more organic material layers.

Abstract: Provided is an operating method of a memory system including a plurality of logical address groups each having a preset logical address range. The operation method may include: selecting a victim block; selecting a plurality of target blocks among empty blocks; mapping at least one logical address group of the logical address groups to each of the target blocks; determining a first logical address group including a logical address of first valid data stored in the victim block, among the logical address groups; and backing up the first valid data into a first target block mapped to the first logical address group among the target blocks.

Abstract: The present disclosure relates to a novel compound, and an organic electroluminescent device including the same, and by using the compound according to the present disclosure in an organic material layer, preferably a light emitting layer or an auxiliary light emitting layer, of an organic electroluminescent device, light emission efficiency, a driving voltage, a lifetime and the like of the organic electroluminescent device may be enhanced.

Abstract: Provided are methods for synthesizing a halogen-functionalized carbon material and for fabricating an electronic device employing the same. The synthesizing method of the halogen-functionalized carbon material may include thermally treating a transition metal material at a first temperature in a hydrogen atmosphere and thermally treating the transition metal material at a second temperature, which is lower than or equal to the first temperature, while further supplying halocarbon on the transition metal material.

Abstract: The present disclosure relates to a novel organic compound and an organic electroluminescent device comprising the same, and the organic compound of the present disclosure may be used for an organic material layer of the organic electroluminescent device, thereby improving the light emitting efficiency, driving voltage, lifetime, and the like of the organic electroluminescent device.