Abstract: A random number generator resistant to side-channel attacks. The random number generator includes an entropy unit generating random pulses, a random frequency clock generator generating random frequencies by receiving random pulses output from the entropy unit, and an MCU externally masking a specific operation or a specific instruction based on a random frequency received from the random frequency clock generator.

Abstract: A random number generator resistant to side-channel attacks. The random number generator includes an entropy unit generating random pulses, a random frequency clock generator generating random frequencies by receiving random pulses output from the entropy unit, and an MCU externally masking a specific operation or a specific instruction based on a random frequency received from the random frequency clock generator.

Abstract: A semiconductor pattern is formed on a substrate. An interlayer insulating layer is formed on the semiconductor pattern. A contact hole in the interlayer insulating layer is formed the semiconductor pattern is exposed. A lower plug is formed in the contact hole by a selective epitaxial growth (SEG) process. An upper plug is formed in the contact hole on the lower plug by alternately and repeatedly performing a deposition process and an etching process.

Abstract: A semiconductor pattern is formed on a substrate. An interlayer insulating layer is formed on the semiconductor pattern. A contact hole in the interlayer insulating layer is formed the semiconductor pattern is exposed. A lower plug is formed in the contact hole by a selective epitaxial growth (SEG) process. An upper plug is farmed in the contact hole on the lower plug by alternately and repeatedly performing a deposition process and an etching process.

Abstract: Methods of forming integrated circuit capacitors having composite oxide-nitride-oxide (ONO) dielectric layers include the steps of forming a first electrically insulating layer on a semiconductor substrate and then forming a first conductive layer on the first electrically insulating layer. The first conductive layer and the first electrically insulating layer are then etched in sequence to define an opening in the first conductive layer which exposes upper and lower surfaces of the first conductive layer extending adjacent the opening. The exposed upper and lower surfaces of the first conductive layer are then cleaned to remove a native oxide film therefrom. A preferred composite dielectric layer is then formed on the first conductive layer. The composite dielectric layer comprises a first oxide layer which contacts the cleaned upper and lower surfaces of the first conductive layer, a nitride layer which contacts the first oxide layer and a second oxide layer which contacts the nitride layer.