Abstract: Method of forming pn heterojunction between nickel oxide and gallium oxide disclosed. The method includes forming a trench by etching an n-type gallium oxide epitaxial layer epitaxially grown on an n-type gallium oxide substrate using an etch mask, forming a p-type nickel oxide region on the bottom of the trench by sputtering a nickel oxide target on the n-type gallium oxide epitaxial layer in a mixed gas atmosphere of argon and oxygen, and forming a nickel layer on the p-type nickel oxide region by sputtering a nickel target on the n-type gallium oxide epitaxial layer in an argon gas atmosphere.

Abstract: A method for adjusting a channel length of silicon carbide MOSFET includes depositing a buffer layer and a poly-silicon layer on a first conductivity type epitaxial layer having a plurality of second conductivity type bases, etching the poly-silicon layer to form a poly-silicon pattern, depositing a spacer layer on the poly-silicon pattern and exposed buffer layer to a first deposition thickness, forming a first width of spacers of the poly-silicon pattern by dry etching the spacer layer, forming a pair of first conductivity type source regions on the second conductivity type bases by ion implantation into a first pattern mask formed on the buffer layer, forming a second conductivity type source region on the second conductivity type bases by implanting ions into a second pattern mask, and forming a gate electrode on a first channel extending from the first conductivity type source region to the first conductivity type epitaxial layer.

Abstract: Silicon carbide junction barrier Schottky diode disclosed. Silicon carbide junction barrier Schottky diode includes a first conductivity-type substrate, a first conductivity-type epitaxial layer, being formed by epitaxial growth of silicon carbide doped with a first conductivity-type impurity on the first conductivity-type substrate, a charge injection region, being formed on the first conductivity-type epitaxial layer and doped at a concentration of the first conductivity-type impurity higher than that of the first conductivity-type epitaxial layer, a second conductivity-type junction region, being formed on the first conductivity-type epitaxial layer so as to contact the charge injection region, a Schottky metal layer, being formed on the charge injection region and the second conductivity-type junction region, an anode electrode, being formed on the Schottky metal layer, and a cathode electrode, being formed under the first conductivity-type substrate.