Abstract: A pellicle assembly may include a pellicle membrane and a pellicle border. The pellicle membrane may include at least one recess and at least one opening. The at least one recess may extend from an upper surface or a lower surface of the pellicle membrane. The at least one opening may penetrate from the upper surface to the lower surface of the pellicle membrane. The pellicle border may support the pellicle membrane.

Abstract: A pellicle structure may include a membrane border and a pellicle membrane. The membrane border defines an open region. The membrane is in contact with the membrane border and extending over the open region. Thus, the membrane is capable of maintaining a thin film having a uniform thickness to prevent pattern errors.

Abstract: There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

Abstract: There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

Abstract: There is provided a photomask including a pellicle. The photomask may include a substrate and a pellicle, and mask patterns may be disposed on the substrate. The pellicle may include a carbon nanotube membrane providing a plurality of pores. The pellicle may include a coating layer on the carbon nanotube membrane.

Abstract: There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography and a method of manufacturing the same. The pellicle for EUV lithography includes a pellicle membrane including a plurality of through holes. The pellicle membrane includes a core layer and a protective layer that covers and protects the core layer. The frame supports the pellicle membrane.

Abstract: A method of fabricating a phase shift photomask (PSM) includes providing a blank phase shift photomask including a phase shift layer, a light blocking layer, and a resist layer, patterning the resist layer of the PSM, removing a portion of the light blocking layer, removing the resist layer, and removing the portion of the phase shift layer using an etch process. The etch process is performed using a pulse power supply technique for which on and off operations of an alternating current (AC) power are alternately and repeatedly executed.

Abstract: A blank phase shift photomask includes a transparent substrate, a phase shift layer disposed on the transparent substrate, a light blocking layer disposed on the phase shift layer, and a resist layer disposed on the light blocking layer. The phase shift layer has a light transmittance of between approximately 60% to approximately 90% and provides a phase difference of between approximately 180 degrees to approximately 250 degrees.

Abstract: A photomask includes a light transmission substrate, a plurality of pattern regions disposed over the light transmission substrate, a shape of the plurality of pattern regions being transferred onto a wafer during an exposure process, and a light blocking region surrounding the plurality of pattern regions. Each of the plurality of pattern regions is a light transmitting region that exposes a portion of the light transmission substrate. The light blocking region includes first light blocking patterns that respectively surround the plurality of pattern regions to have closed loop shapes and second light blocking patterns that are disposed between adjacent first light blocking patterns, adjacent second light blocking patterns being spaced apart from each other by a first distance in a first direction. And the first light blocking patterns have a first thickness and the second light blocking patterns have a second thickness which is smaller than the first thickness.

Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.

Abstract: A photomask includes a light transmission substrate, a plurality of pattern regions disposed over the light transmission substrate, a shape of the plurality of pattern regions being transferred onto a wafer during an exposure process, and a light blocking region surrounding the plurality of pattern regions. Each of the plurality of pattern regions is a light transmitting region that exposes a portion of the light transmission substrate. The light blocking region includes first light blocking patterns that respectively surround the plurality of pattern regions to have closed loop shapes and second light blocking patterns that are disposed between adjacent first light blocking patterns, adjacent second light blocking patterns being spaced apart from each other by a first distance in a first direction. And the first light blocking patterns have a first thickness and the second light blocking patterns have a second thickness which is smaller than the first thickness.

Abstract: A photomask includes a light transmission substrate, and a transfer pattern disposed over the light transmission substrate, a shape of the transfer pattern being transferred onto a wafer by an exposure process. The transfer pattern comprises a first transfer pattern having a closed loop shape and having a first thickness, and a plurality of second transfer patterns disposed in an opening surrounded by the first transfer pattern, the plurality of second transfer patterns being arrayed in a first direction such that adjacent second transfer patterns are spaced apart from each other by a first distance, the second transfer patterns having a second thickness which is less than the first thickness of the first transfer pattern.

Abstract: A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.

Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.

Abstract: A photomask includes a light transmission substrate, and a transfer pattern disposed over the light transmission substrate, a shape of the transfer pattern being transferred onto a wafer by an exposure process. The transfer pattern comprises a first transfer pattern having a closed loop shape and having a first thickness, and a plurality of second transfer patterns disposed in an opening surrounded by the first transfer pattern, the plurality of second transfer patterns being arrayed in a first direction such that adjacent second transfer patterns are spaced apart from each other by a first distance, the second transfer patterns having a second thickness which is less than the first thickness of the first transfer pattern.

Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.

Abstract: A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.

Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.

Abstract: A method for correcting pattern critical dimension (CD) in a photomask includes forming a multilayer structure over a substrate by stacking at least two thin films capable of forming a compound by application of energy from an energy source; forming a light-shielding layer over the multilayer structure; forming a light-shielding layer pattern that selectively exposes the multilayer structure by selectively etching the light-shielding layer; detecting a correction region requiring a CD correction by measuring a CD of the light-shielding layer pattern; and forming a compound, by which the CD is corrected by a transmittance difference between the multilayer structure and the correction region, by applying an energy to a region of the multilayer structure corresponding to the detected correction region to react the thin films.