Patents by Inventor Tae Joong Ha
Tae Joong Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230111608Abstract: There is provided a photomask including a pellicle. The photomask may include a substrate and a pellicle, and mask patterns may be disposed on the substrate. The pellicle may include a carbon nanotube membrane providing a plurality of pores. The pellicle may include a coating layer on the carbon nanotube membrane.Type: ApplicationFiled: March 25, 2022Publication date: April 13, 2023Applicant: SK hynix Inc.Inventor: Tae Joong HA
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Publication number: 20220397818Abstract: There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.Type: ApplicationFiled: November 17, 2021Publication date: December 15, 2022Applicant: SK hynix Inc.Inventor: Tae Joong HA
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Publication number: 20220252973Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography and a method of manufacturing the same. The pellicle for EUV lithography includes a pellicle membrane including a plurality of through holes. The pellicle membrane includes a core layer and a protective layer that covers and protects the core layer. The frame supports the pellicle membrane.Type: ApplicationFiled: July 14, 2021Publication date: August 11, 2022Applicant: SK hynix Inc.Inventor: Tae Joong HA
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Publication number: 20220121106Abstract: A method of fabricating a phase shift photomask (PSM) includes providing a blank phase shift photomask including a phase shift layer, a light blocking layer, and a resist layer, patterning the resist layer of the PSM, removing a portion of the light blocking layer, removing the resist layer, and removing the portion of the phase shift layer using an etch process. The etch process is performed using a pulse power supply technique for which on and off operations of an alternating current (AC) power are alternately and repeatedly executed.Type: ApplicationFiled: December 27, 2021Publication date: April 21, 2022Applicant: SK hynix Inc.Inventors: Choong Han RYU, Tae Joong HA
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Publication number: 20190354004Abstract: A blank phase shift photomask includes a transparent substrate, a phase shift layer disposed on the transparent substrate, a light blocking layer disposed on the phase shift layer, and a resist layer disposed on the light blocking layer. The phase shift layer has a light transmittance of between approximately 60% to approximately 90% and provides a phase difference of between approximately 180 degrees to approximately 250 degrees.Type: ApplicationFiled: February 21, 2019Publication date: November 21, 2019Applicant: SK hynix Inc.Inventors: Choong Han RYU, Tae Joong HA
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Patent number: 10338464Abstract: A photomask includes a light transmission substrate, a plurality of pattern regions disposed over the light transmission substrate, a shape of the plurality of pattern regions being transferred onto a wafer during an exposure process, and a light blocking region surrounding the plurality of pattern regions. Each of the plurality of pattern regions is a light transmitting region that exposes a portion of the light transmission substrate. The light blocking region includes first light blocking patterns that respectively surround the plurality of pattern regions to have closed loop shapes and second light blocking patterns that are disposed between adjacent first light blocking patterns, adjacent second light blocking patterns being spaced apart from each other by a first distance in a first direction. And the first light blocking patterns have a first thickness and the second light blocking patterns have a second thickness which is smaller than the first thickness.Type: GrantFiled: November 14, 2017Date of Patent: July 2, 2019Assignee: SK HYNIX INC.Inventor: Tae Joong Ha
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Patent number: 10036950Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.Type: GrantFiled: August 24, 2016Date of Patent: July 31, 2018Assignee: SK HYNIX INC.Inventor: Tae Joong Ha
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Publication number: 20180074396Abstract: A photomask includes a light transmission substrate, a plurality of pattern regions disposed over the light transmission substrate, a shape of the plurality of pattern regions being transferred onto a wafer during an exposure process, and a light blocking region surrounding the plurality of pattern regions. Each of the plurality of pattern regions is a light transmitting region that exposes a portion of the light transmission substrate. The light blocking region includes first light blocking patterns that respectively surround the plurality of pattern regions to have closed loop shapes and second light blocking patterns that are disposed between adjacent first light blocking patterns, adjacent second light blocking patterns being spaced apart from each other by a first distance in a first direction. And the first light blocking patterns have a first thickness and the second light blocking patterns have a second thickness which is smaller than the first thickness.Type: ApplicationFiled: November 14, 2017Publication date: March 15, 2018Inventor: Tae Joong HA
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Patent number: 9846358Abstract: A photomask includes a light transmission substrate, and a transfer pattern disposed over the light transmission substrate, a shape of the transfer pattern being transferred onto a wafer by an exposure process. The transfer pattern comprises a first transfer pattern having a closed loop shape and having a first thickness, and a plurality of second transfer patterns disposed in an opening surrounded by the first transfer pattern, the plurality of second transfer patterns being arrayed in a first direction such that adjacent second transfer patterns are spaced apart from each other by a first distance, the second transfer patterns having a second thickness which is less than the first thickness of the first transfer pattern.Type: GrantFiled: November 4, 2015Date of Patent: December 19, 2017Assignee: SK HYNIX INC.Inventor: Tae Joong Ha
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Patent number: 9612524Abstract: A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.Type: GrantFiled: June 10, 2015Date of Patent: April 4, 2017Assignee: SK Hynix Inc.Inventors: In Hwan Lee, Sun Young Koo, Seo Min Kim, Yong Dae Kim, Jin Soo Kim, Byung Hoon Lee, Mi Jeong Lim, Chang Moon Lim, Tae Joong Ha, Yoon Suk Hyun
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Publication number: 20160363855Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.Type: ApplicationFiled: August 24, 2016Publication date: December 15, 2016Inventor: Tae Joong HA
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Publication number: 20160291459Abstract: A photomask includes a light transmission substrate, and a transfer pattern disposed over the light transmission substrate, a shape of the transfer pattern being transferred onto a wafer by an exposure process. The transfer pattern comprises a first transfer pattern having a closed loop shape and having a first thickness, and a plurality of second transfer patterns disposed in an opening surrounded by the first transfer pattern, the plurality of second transfer patterns being arrayed in a first direction such that adjacent second transfer patterns are spaced apart from each other by a first distance, the second transfer patterns having a second thickness which is less than the first thickness of the first transfer pattern.Type: ApplicationFiled: November 4, 2015Publication date: October 6, 2016Inventor: Tae Joong HA
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Patent number: 9454073Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.Type: GrantFiled: November 21, 2014Date of Patent: September 27, 2016Assignee: SK HYNIX INC.Inventor: Tae Joong Ha
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Publication number: 20160209741Abstract: A reflective mask includes a first reflection layer disposed on a mask substrate, a first capping layer disposed on the first reflection layer, a second reflection pattern disposed on a portion of the first capping layer, and a phase shifter disposed between the second reflection pattern and the first capping layer to cause a phase difference between a first light reflecting from the first reflection layer and a second light reflecting from the second reflection pattern. Related methods are also provided.Type: ApplicationFiled: June 10, 2015Publication date: July 21, 2016Inventors: In Hwan LEE, Sun Young KOO, Seo Min KIM, Yong Dae KIM, Jin Soo KIM, Byung Hoon LEE, Mi Jeong LIM, Chang Moon LIM, Tae Joong HA, Yoon Suk HYUN
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Publication number: 20150227040Abstract: A photomask blank and/or photomask includes a light transmitting substrate, a highly reflective material layer disposed on the light transmitting substrate, and a transfer pattern layer disposed on the highly reflective material layer. The highly reflective material layer reflects light to be transmitted through the light transmitting substrate, with a predetermined reflectivity.Type: ApplicationFiled: November 21, 2014Publication date: August 13, 2015Inventor: Tae Joong HA
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Patent number: 7993802Abstract: A method for correcting pattern critical dimension (CD) in a photomask includes forming a multilayer structure over a substrate by stacking at least two thin films capable of forming a compound by application of energy from an energy source; forming a light-shielding layer over the multilayer structure; forming a light-shielding layer pattern that selectively exposes the multilayer structure by selectively etching the light-shielding layer; detecting a correction region requiring a CD correction by measuring a CD of the light-shielding layer pattern; and forming a compound, by which the CD is corrected by a transmittance difference between the multilayer structure and the correction region, by applying an energy to a region of the multilayer structure corresponding to the detected correction region to react the thin films.Type: GrantFiled: May 28, 2009Date of Patent: August 9, 2011Assignee: Hynix Semiconductor Inc.Inventor: Tae Joong Ha
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Patent number: 7955760Abstract: Disclosed herein is a method of correcting defects in photomasks. According to one embodiment, a light absorption layer is formed on a photomask where pin hole defects occur in a light blocking layer, and light absorption patterns are formed on the pin hole defect portions by selectively etching the light absorption layer. According to another embodiment, a light absorption layer is formed on a backside of a photomask having pin hole defects in a light blocking layer, and light absorption patterns are formed on the backside of the photomask substrate corresponding to a region having pin hole defects by etching the light absorption layer.Type: GrantFiled: June 27, 2008Date of Patent: June 7, 2011Assignee: Hynix Semiconductor Inc.Inventors: Tae Joong Ha, Hee Chun Kim
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Patent number: 7901844Abstract: A method for fabricating a photomask includes forming a light blocking layer, a hard mask layer, and a resist layer on a transparent substrate, forming a resist pattern to selectively expose the hard mask layer by removing the resist layer selectively, forming a hard mask pattern by etching the exposed hard mask layer using the resist pattern as an etch mask, exposing the hard mask pattern by removing the resist pattern; measuring a critical dimension of the exposed hard mask pattern, correcting the measured critical dimension of the hard mask pattern to correspond to a critical dimension of a target pattern, forming a light blocking pattern by etching the exposed light blocking layer using the corrected hard mask pattern as an etch mask, and removing the hard mask pattern.Type: GrantFiled: June 30, 2008Date of Patent: March 8, 2011Assignee: Hynix Semiconductor Inc.Inventor: Tae Joong Ha
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Patent number: 7901849Abstract: A photomask comprises: a light transmitting substrate; patterns disposed over the light transmitting substrate to define a light transmitting region; and a light transmittance control layer disposed between the light transmitting substrate and the patterns having a relatively high light transmittance in a first control layer region overlapping a first portion of the light transmitting region adjacent to a poor pattern having a size larger than a normal size than in a second control layer region overlapping a second portion of the light transmitting region between normal patterns having a normal size.Type: GrantFiled: December 31, 2008Date of Patent: March 8, 2011Assignee: Hynix Semiconductor Inc.Inventor: Tae Joong Ha
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Patent number: 7670728Abstract: A method for repairing a bridge in a photo mask includes disposing a phase shift layer pattern and a light shielding layer pattern over a transparent substrate with the phase shift layer pattern disposed between the transparent substrate and the light shielding layer; forming a resist layer over the entire surface of the photo mask having a defective pattern causing a bridge between neighboring portions of the phase shift layer pattern; exposing the defective pattern by etching the resist layer; and removing the exposed defective pattern.Type: GrantFiled: June 28, 2007Date of Patent: March 2, 2010Assignee: Hynix Semiconductor Inc.Inventor: Tae Joong Ha