Patents by Inventor Tae Jung Lim

Tae Jung Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pt—N—C based electrochemical catalyst for chlorine evolution reaction and production method thereof
    Patent number: 11358126
    Abstract: The present invention relates to a Pt—N—C based electrochemical catalyst for chlorine evolution reaction and a production method thereof, and an aspect of the present invention provides a Pt—N—C based electrochemical catalyst including: a carbon support; and an organic compound including Pt and N distributed on the carbon support.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: June 14, 2022
    Inventors: Sang Hoon Joo, Tae Jung Lim
  • Pt-N-C Based Electrochemical Catalyst for Chlorine Evolution Reaction and Production Method Thereof
    Publication number: 20210060535
    Abstract: The present invention relates to a Pt—N—C based electrochemical catalyst for chlorine evolution reaction and a production method thereof, and an aspect of the present invention provides a Pt—N—C based electrochemical catalyst including: a carbon support; and an organic compound including Pt and N distributed on the carbon support.
    Type: Application
    Filed: February 14, 2020
    Publication date: March 4, 2021
    Inventors: Sang Hoon Joo, Tae Jung Lim
  • Method of manufacturing semiconductor device
    Patent number: 7192883
    Abstract: The present invention relates to a method of manufacturing a semiconductor device. A minute pattern is formed using a hard mask film of a series of a nitride film as an etch mask. Before a hard mask film removal process is performed, the step of performing given etching using an oxide film etchant is added to remove an abnormal oxide film on the nitride film. It is thus possible to effectively remove the hard mask film. Generation of voids in a pattern below the hard mask film can be also effectively prevented using BOE in which the composition ratio of HF and NH4F and an etching temperature are optimized as an oxide film etchant.
    Type: Grant
    Filed: December 13, 2004
    Date of Patent: March 20, 2007
    Assignee: Hynix Semiconductor Inc.
    Inventors: Tae Jung Lim, Sang Wook Park