Abstract: Disclosed is a method for forming a silicide film on bit lines or word lines in a semiconductor device. The method includes the steps of: placing a substrate within a reacting chamber, the substrate having an objective layer on which a metal silicide film is to be formed; and supplying a first source gas for silicon component of the metal silicide and a second source gas for metal component of the metal silicide into the reacting chamber with maintaining a flow rate of the first source gas and with varying a flow rate of the second source gas, wherein the first and second source gases are discretely supplied into the reacting chamber, a reacting zone of the reacting chamber being maintained at a constant temperature range for a selected time.

Abstract: An electrostatic discharge (ESD) protecting transistor and a method for fabricating the same, capable of consuming a high voltage or overcurrent applied to a semiconductor circuit device and thereby protecting the circuit device from the high voltage or overcurrent. The ESD protecting transistor is of an asymmetric charge coupled MOS transistor structure having a highly doped buried layer capable of dispersing a current flux, thereby removing an instant ESD impact and reducing generation of heat caused by a concentration of high current flux. Accordingly, an effect of improving the resistance characteristic to the ESD impact is provided.

Abstract: The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.